2U97
Abstract: No abstract text available
Text: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS642A- FEBRUARY 1994 - REVISED JUNE 1995 DGEPACKAGE TOP VIEW • Organization . . . 2M x 4 x 2 Banks • 3.3-V Power Supply (±10% Tolerance) • TWo Banks for On-Chip Interleaving
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TMS626402
2097152-WORD
SMOS642A-
100-MHz
2U97
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Untitled
Abstract: No abstract text available
Text: TMS626402, TMS636402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORIES SMOS642 - FEBRUARY 1994 TMS6x6402-10 10 ns TMS6x6402-1212.5 ns TMS6x6402-15 15 ns 30 ns 35 ns 40 ns v Gc q [ 5 NC [ 6 Vs s q C 7 DQ1 [ 8 Vc c q E 9 NC C 10 NC [ 11
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TMS626402,
TMS636402
2097152-WORD
SMOS642
TMS6x6402-10
TMS6x6402-1212
TMS6x6402-15
A0-A10
OJ028)
TMS626402
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TMS6264
Abstract: TMS626402 CLOCK30 AND-02
Text: 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS642B - FEBRUARY 1994 - REVISED JUNE 1995 DGEPACKAGE TOP VIEW • Organization . . . 2M x 4 x 2 Banks • 3.3-V Power Supply (±10% Tolerance) • Two Banks for On-Chip Interleaving
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2097152-WORD
SMOS642B
100-MHz
TMS626402
R-PDSO-G44)
TMS626402
TMS6264
CLOCK30
AND-02
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TMS6264
Abstract: No abstract text available
Text: TMS626402 2097152-WORD BY 4-BIT BY 2-BANK SYNCHRONOUS DYNAMIC RANDOM-ACCESS MEMORY SMOS842A - FEBRUARY 1994 - REVISED JUNE 1995 • Organization . . . 2M x 4 x 2 Banks DGE PACKAGE TOP VIEW • 3.3-V Power Supply (±10% Tolerance) • Two Banks fo r On-Chip Interleaving
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TMS626402
2097152-WORD
SMOS842A
100-MHz
TMS6264
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1993 synchronous dram jedec
Abstract: TMS626402 TMS626802 SDRAM 1994 Texas Instruments TMS6264
Text: 16-Megabit Synchronous DRAM Technical Reference ^ Texa s In s t r u m e n t s IMPORTANT NOTICE Texas Instruments Tl reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest version of relevant information
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16-Megabit
1993 synchronous dram jedec
TMS626402
TMS626802
SDRAM 1994 Texas Instruments
TMS6264
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