Contextual Info: SN74LVCU04 HEX INVERTER SCAS282B - JANUARY 1993 - REVISED JULY 1995 D, DB, OR PW PACKAGE TOP VIEW • EP/C (Enhanced-Performance Implanted CMOS) Submicron Process I • ESD Protection Exceeds 2000 V Per MIL-STD-883C, Method 3015; Exceeds 200 V Using Machine Model

SN74LVCU04A

Abstract: scba004
Contextual Info: SN74LVCU04A HEX INVERTER S C AS 282E - JA N U A R Y 1993 - R EVISED JA N U A R Y 1998 • • • • • • • EPIC Enhanced-Performance Implanted D, DB, O R PW PACKAGE (TOP VIEW CMOS) Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

LCU04A

Abstract: A115-A C101 SN74LVCU04A SN74LVCU04AD
Contextual Info: SN74LVCU04A HEX INVERTER SCAS282M − JANUARY 1993 − REVISED MARCH 2004 D D D D D D D D D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C

SN74LVCU04A

Contextual Info: SN74LVCU04A HEX INVERTER SC A S 282F - JA N U A R Y 1993 - R EVISED JU NE 1998 • • • • • • • EPIC Enhanced-Performance Implanted D, DB, OR PW PACKAGE (TOP VIEW CMOS) Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

SN74LVCU04

Contextual Info: SN74LVCU04 HEX INVERTER SCAS282 - JANUARY 1 9 9 3 - REVISED MARCH 1994 D, DB, OR PW PACKAGE {TOP VIEW EPIC Enhanced-Performance Implanted CMOS) Submicron Process Typical V q l p (Output Ground Bounce) < 0.8 V at VCc = 3.3 V, TA = 25°C Typical Vo h v (Output Vq h Undershoot)

Contextual Info: SN74LVCU04A HEX INVERTER www.ti.com SCAS282M – JANUARY 1993 – REVISED FEBRUARY 2005 FEATURES • • • • D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce)

SN74LVCU04A

Contextual Info: SN74LVCU04A HEX INVERTER SCAS282D – JANUARY 1993 – REVISED JANUARY 1997 D D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74LVCU04A HEX INVERTER SCAS282J – JANUARY 1993 – REVISED JULY 2002 D D D D D D D D D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C

Contextual Info: SN74LVCU04A HEX INVERTER www.ti.com SCAS282M – JANUARY 1993 – REVISED FEBRUARY 2005 FEATURES • • • • D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce)

Contextual Info: SN74LVCU04A HEX INVERTER www.ti.com SCAS282M – JANUARY 1993 – REVISED FEBRUARY 2005 FEATURES • • • • D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce)

Contextual Info: SN74LVCU04A HEX INVERTER SCAS282J – JANUARY 1993 – REVISED JULY 2002 D D D D D D D D D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C

inverter control techniques

Abstract: SN74LVCU04A
Contextual Info: SN74LVCU04A HEX INVERTER SCAS282C – JANUARY 1993 – REVISED SEPTEMBER 1996 D D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

A115-A

Abstract: C101 SN74LVCU04A SN74LVCU04AD
Contextual Info: SN74LVCU04A HEX INVERTER www.ti.com SCAS282M – JANUARY 1993 – REVISED FEBRUARY 2005 FEATURES • • • • D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce)

Contextual Info: SN74LVCU04A HEX INVERTER www.ti.com SCAS282M – JANUARY 1993 – REVISED FEBRUARY 2005 FEATURES • • • • D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce)

Contextual Info: SN74LVCU04A HEX INVERTER SCAS282D - JANUARY 1993 - REVISED JANUARY 1997 • • • • E P IC m Enhanced-Perform ance Im planted CMOS Submicron Process D, DB , OR PW P A C K A G E (TO P V IE W ) ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V

A115-A

Abstract: C101 SN74LVCU04A SN74LVCU04AD LCU04A
Contextual Info: SN74LVCU04A HEX INVERTER SCAS282J – JANUARY 1993 – REVISED JULY 2002 D D D D D D D D D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C

LCU04A

Contextual Info: SN74LVCU04A HEX INVERTER www.ti.com SCAS282M – JANUARY 1993 – REVISED FEBRUARY 2005 FEATURES • • • • D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce)

Contextual Info: SN74LVCU04 HEX INVERTER S C A S232 - JA N U A R Y 1993 - REVISED M ARCH 1994 • EP/C Enhanced-Performance Implanted CMOS Submicron Process • Typical Vqlp (Output Ground Bounce) < 0.8 V at VCC = 3.3 V, TA = 25°C D, DB, OR PW PACKAGE (TOP VIEW) 1A [

Contextual Info: SN74LVCU04 HEX INVERTER JANUARY 1993 * • * • * * Space-Saving Package Option: Shrink Small-Outline Package DB Features EIAJ 0.65-mm Lead Pitch EPIC (Enhanced-Performance Implanted CMOS) Submicron Process Designed to Facilitate Incident Wave Switching for Line Impedances of 50 Q. or

Contextual Info: SN74LVCU04A HEX INVERTER SCAS282L – JANUARY 1993 – REVISED AUGUST 2003 D D D D D D D D D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce) <0.8 V at VCC = 3.3 V, TA = 25°C

Contextual Info: SN74LVCU04A HEX INVERTER SCAS282E - JANUARY 1993 - REVISED JANUARY 1998 • EPIC Enhanced-Performance Implanted CMOS Submicron Process • ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

Contextual Info: SN74LVCU04A HEX INVERTER www.ti.com SCAS282M – JANUARY 1993 – REVISED FEBRUARY 2005 FEATURES • • • • D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce)

SN74LVCU04A

Contextual Info: SN74LVCU04A HEX INVERTER SCAS282G – JANUARY 1993 – REVISED OCTOBER 1998 D D D D D D D EPIC  Enhanced-Performance Implanted CMOS Submicron Process ESD Protection Exceeds 2000 V Per MIL-STD-883, Method 3015; Exceeds 200 V Using Machine Model (C = 200 pF, R = 0)

A115-A

Abstract: C101 SN74LVCU04A SN74LVCU04AD
Contextual Info: SN74LVCU04A HEX INVERTER www.ti.com SCAS282M – JANUARY 1993 – REVISED FEBRUARY 2005 FEATURES • • • • D, DB, DGV, NS, OR PW PACKAGE TOP VIEW Operates From 1.65 V to 3.6 V Inputs Accept Voltages to 5.5 V Max tpd of 3.8 ns Typical VOLP (Output Ground Bounce)