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    SPA11N80C3 Price and Stock

    Infineon Technologies AG SPA11N80C3XKSA1

    MOSFET N-CH 800V 11A TO220-FP
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    DigiKey SPA11N80C3XKSA1 Tube 2,433 1
    • 1 $3.85
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    • 1000 $1.35225
    • 10000 $1.34075
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    Avnet Americas SPA11N80C3XKSA1 Bulk 16 Weeks, 3 Days 1
    • 1 $3.55
    • 10 $2.65
    • 100 $1.86
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    Mouser Electronics SPA11N80C3XKSA1 200
    • 1 $3.16
    • 10 $2.98
    • 100 $1.62
    • 1000 $1.34
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    Verical SPA11N80C3XKSA1 700 5
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    • 10 $2.2615
    • 100 $1.4643
    • 1000 $1.2916
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    Arrow Electronics SPA11N80C3XKSA1 700 15 Weeks 1
    • 1 $2.2538
    • 10 $2.1983
    • 100 $1.4234
    • 1000 $1.2555
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    Newark SPA11N80C3XKSA1 Bulk 633 1
    • 1 $1.16
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    EBV Elektronik SPA11N80C3XKSA1 16 Weeks 500
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    Win Source Electronics SPA11N80C3XKSA1 12,400
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    • 100 $1.5675
    • 1000 $1.3146
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    Infineon Technologies AG SPA11N80C3XKSA2

    MOSFET N-CH 800V 11A TO220-3
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    DigiKey SPA11N80C3XKSA2 Tube 194 1
    • 1 $3.85
    • 10 $3.85
    • 100 $3.85
    • 1000 $1.35225
    • 10000 $1.34075
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    Avnet Americas SPA11N80C3XKSA2 Tube 15 Weeks 500
    • 1 -
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    • 1000 $1.31313
    • 10000 $1.30048
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    Mouser Electronics SPA11N80C3XKSA2 387
    • 1 $3.21
    • 10 $3.03
    • 100 $1.62
    • 1000 $1.34
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    Verical SPA11N80C3XKSA2 500 5
    • 1 -
    • 10 $1.7977
    • 100 $1.648
    • 1000 $1.3535
    • 10000 $1.34
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    SPA11N80C3XKSA2 500 500
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    • 1000 $1.6407
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    Arrow Electronics SPA11N80C3XKSA2 500 15 Weeks 1
    • 1 $1.7475
    • 10 $1.7475
    • 100 $1.602
    • 1000 $1.3157
    • 10000 $1.3025
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    Newark SPA11N80C3XKSA2 Bulk 487 1
    • 1 $3.81
    • 10 $2.91
    • 100 $2.12
    • 1000 $1.65
    • 10000 $1.65
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    Rochester Electronics SPA11N80C3XKSA2 33 1
    • 1 $1.49
    • 10 $1.49
    • 100 $1.4
    • 1000 $1.27
    • 10000 $1.27
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    EBV Elektronik SPA11N80C3XKSA2 16 Weeks 500
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    Win Source Electronics SPA11N80C3XKSA2 12,500
    • 1 -
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    • 100 $1.4525
    • 1000 $1.1802
    • 10000 $1.1802
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    Infineon Technologies AG SPA11N80C3XK

    Trans MOSFET N-CH 800V 11A 3-Pin(3+Tab) TO-220FP - Rail/Tube (Alt: SPA11N80C3XKSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SPA11N80C3XK Tube 15 Weeks 500
    • 1 -
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    • 1000 $1.25803
    • 10000 $1.2131
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    Infineon Technologies AG SPA11N80C3

    MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SPA11N80C3 1,125
    • 1 $2.86
    • 10 $2.41
    • 100 $1.94
    • 1000 $1.48
    • 10000 $1.34
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    Bristol Electronics SPA11N80C3 2,686
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    TME SPA11N80C3 1
    • 1 $2.43
    • 10 $2.19
    • 100 $1.93
    • 1000 $1.63
    • 10000 $1.63
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    Component Electronics, Inc SPA11N80C3 28
    • 1 $3.08
    • 10 $3.08
    • 100 $2.31
    • 1000 $2
    • 10000 $2
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    Win Source Electronics SPA11N80C3 12,600
    • 1 -
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    • 100 $2.5011
    • 1000 $2.3087
    • 10000 $2.3087
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    Infineon Technologies AG SP000216320

    MOSFETs N-Ch 800V 11A TO220FP-3 CoolMOS C3
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    Mouser Electronics SP000216320
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    Find more SPA11N80C3 price and stock on Findchips.com

    SPA11N80C3 Datasheets (5)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SPA11N80C3 Infineon Technologies N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; VDS (max): 800.0 V; Package: TO-220 FullPAK; RDS(ON) @ TJ=25°C VGS=10: 450.0 mOhm; ID(max) @ TC=25°C: 11.0 A; IDpuls (max): 33.0 A; Original PDF
    SPA11N80C3 Infineon Technologies Cool MOS Power Transistor Original PDF
    SPA11N80C3 E8209 Infineon Technologies 800V COOLMOS N-CHANNEL POWER MOS Original PDF
    SPA11N80C3XKSA1 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 11A TO220FP Original PDF
    SPA11N80C3XKSA2 Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 11A TO220 Original PDF

    SPA11N80C3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    11n80c3

    Abstract: SPA11N80C3
    Text: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3

    SPA11N80C3

    Abstract: No abstract text available
    Text: SPA11N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.45 Ω • Extreme dv/dt rated


    Original     		PDF SPA11N80C3 P-TO220-3-31 11N80C3 P-TO220-3-31 Q67040-S4439 SPA11N80C3

    11n80c3

    Abstract: No abstract text available
    Text: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 11n80c3

    11N80C3

    Abstract: No abstract text available
    Text: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3 11N80C3

    MOSFET 11N80c3

    Abstract: 11N80
    Text: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 MOSFET 11N80c3 11N80

    11N80C3

    Abstract: 11n80c
    Text: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO-220-3-31: P-TO220-3-1 Q67040-S4438 11N80C3 11n80c

    11n80c3

    Abstract: No abstract text available
    Text: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220-3 11N80C3 11n80c3

    11n80c3

    Abstract: SPA11N80C3 SPP11N80C3 80011a 11n80c
    Text: SPP11N80C3 SPA11N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 P-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3 SPP11N80C3 80011a 11n80c

    11N80C3

    Abstract: No abstract text available
    Text: SPP11N80C3 SPA11N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω 11 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 P-TO220-3-1 Q67040-S4438 11N80C3

    Q67040-S4439

    Abstract: No abstract text available
    Text: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA11N80C3 11N80C3 11N80C3 Q67040-S4439

    MOSFET 11N80c3

    Abstract: 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22
    Text: SPA11N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.45 Ω 64 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications


    Original     		PDF SPA11N80C3 PG-TO220FP 11N80C3 MOSFET 11N80c3 11N80C3 SPA11N80C3 11N80 11n80c MOSFET 11N80c3 Data sheet JESD22

    11n80c3

    Abstract: SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET PG-TO220-3-31
    Text: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 PG-TO220-3-31 PG-TO220 P-TO220-3-31 PG-TO-220-3-31: Q67040-S4438 11N80C3 11n80c3 SPA11N80C3 SPP11N80C3 11N80 SPP11N80 11n80C3 equivalent TO220 HEATSINK DATASHEET

    11N80C3

    Abstract: 11n80c SPA11N80C3 3C100 SPP11N80C3
    Text: SPP11N80C3 SPA11N80C3 Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.45 Ω ID 11 A • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances


    Original     		PDF SPP11N80C3 SPA11N80C3 P-TO220-3-31 PG-TO220-3-31 PG-TO220-3-1 PG-TO-220-3-31: SPA11N80C3 11N80C3 11N80C3 11n80c 3C100

    igbt welding machine scheme

    Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3
    Text: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and


    Original     		PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original     		PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    c548b

    Abstract: transistor D304 2QS02G transistor C548B IC302 transformer smps 300R Quasi-resonant flyback transformer EVALQS-190W-ICE2QS02G ICE2pcs02 D304 TRANSISTOR
    Text: Application Note, V1.1, 2 February 2009 Application Note EVALQS-190W-ICE2QS02G 190W Evaluation Board Based on Quasi-resonant Flyback Converter for LCD TV SMPS Power Management & Supply N e v e r s t o p t h i n k i n g . Published by Infineon Technologies AG


    Original     		PDF EVALQS-190W-ICE2QS02G ICE3BR4765J, EVALPFC2-ICE2PCS02, ICE2PCS02, EVALQRS-ICE2QS02G-80W, ICE2QS02G, AN-CoolMOS-03, ICE2QS01, c548b transistor D304 2QS02G transistor C548B IC302 transformer smps 300R Quasi-resonant flyback transformer EVALQS-190W-ICE2QS02G ICE2pcs02 D304 TRANSISTOR

    BRIDGE-RECTIFIER 12v 5A

    Abstract: TV flyback transformer ETD-39 TV flyback transformer pinout inrush th1 flyback transformer tv MUR1100 equivalent ETD39 12v MUR1100 24-HN
    Text: DN06014/D Design Note – DN06014/D 170 Vdc Output, Quasi-Resonant Supply Device NCP1308 Application Input Voltage TVs, Monitors 90 – 270 Vac Output Power Topology I/O Isolation 100 W QuasiResonant Flyback Yes Other Specifications Output Voltage Ripple Nominal Current


    Original     		PDF DN06014/D NCP1308 BRIDGE-RECTIFIER 12v 5A TV flyback transformer ETD-39 TV flyback transformer pinout inrush th1 flyback transformer tv MUR1100 equivalent ETD39 12v MUR1100 24-HN

    roland m dc1

    Abstract: D11/diode LP sd capacitor 226 35K 022 electrolytic PFC inductor 600UH SRW42EC AND8124 EER28 BOBBIN ece 5th sem OREGA smt HBD853
    Text: HBD853/D Rev. 2, Aug-2004 Power Factor Correction Handbook Power Factor Correction PFC Handbook Choosing the Right Power Factor Controller Solution HBD853/D Rev. 2, Aug−2004  SCILLC, 2004 “All Rights Reserved” For additional information on Power Factor Correction, contact the Technical Information Center at


    Original     		PDF HBD853/D Aug-2004 roland m dc1 D11/diode LP sd capacitor 226 35K 022 electrolytic PFC inductor 600UH SRW42EC AND8124 EER28 BOBBIN ece 5th sem OREGA smt HBD853

    PX3544

    Abstract: PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J
    Text: Power Management Selection Guide – February 2010 [ www.infineon.com/PowerManagementDiscretes ] [ www.infineon.com/PowerManagementICs ] 2 Introduction The Leader in Energy Efficient Technologies for Power Management Efficient energy conversion is vital for an environmentally-friendly


    Original     		PDF lead519 B152-H9345-G2-X-7600 PX3544 PX7510 PX3560 ICE2AS01 equivalent PX3540 Primarion PX3540 ice3br0665j PRIMARION px3560 ice3br4765 ICE3BR1765J

    600V igbt dc to dc buck converter

    Abstract: TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635
    Text: Infineon Product Catalog for Distribution 2008 Infineon Product Catalog for Distribution 2008 Product Catalog for Distribution Ordering No. B192-H6780-G11-X-7600 Published by Infineon Technologies AG [ www.infineon.com ] [ www.infineon.com/distribution ]


    Original     		PDF B192-H6780-G11-X-7600 SP000008186 VDSL6100i-E 600V igbt dc to dc buck converter TRANSISTOR SMD CODE PACKAGE SOT89 bts 2140 1b data sheet TRANSISTOR SMD CODE PACKAGE SOT23 PSB 6970 HL V1.3 PEF 24628 E V1.2-G infineon psb 6970 PEF 4265 T V2.1 HT 1200-4 SLB 9635

    ICE3B0365J

    Abstract: ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP
    Text: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Pocket Guide www.infineon.com/powermanagement N-Channel MOSFETs 500V … 900V CoolMOSTM Partnumber RDS on , ID, Qg(typ)


    Original     		PDF SPP21N50C3 SPA21N50C3 SPI21N50C3 SPP16N50C3 SPA16N50C3 SPI16N50C3 SPW21N50C3 SPP12N50C3 SPA12N50C3 SPI12N50C3 ICE3B0365J ICE3BR4765J TDA16888 ICE2A765P2 ICE2PCS01G ICE1PCS02G ICE2B0565 ICE1PCS02 ICE2pcs02 IPI60R099CP

    BUP213

    Abstract: BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327
    Text: Mosfets TO-218AB TO-220AB and TO-220 1-G TO-220FP TO-247 1 G 2 D 3 S 1-G 1-G 2-C 2-D 3-E TO-262 NEW! 3-S D-PAK, D2-PAK and TO-252 D D 2 S 3-S 3 SO-8 Dual G2 S2 1 3-D D2 D2 D 5 3-S 2-D G2 1 D 2 D G1 G 1 D1 4 3 2 2 1 G 6 7 D 8 D D 8 7 D 6 D 2-D 4 D D C 3 2S


    Original     		PDF O-218AB O-220AB O-220 O-220FP O-247 O-262 O-252 O-263 OT-323 OT-363 BUP213 BSS123L6327 BSS123E6327 bup314d IPD06N03LAG BSP170PE6327T BSP315 SPD06N80C3XT BSP295-L6327 BSP129E6327