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    SPN4546

    Abstract: 5V 2A MOSFET N-channel
    Text: SPN4546 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4546 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF SPN4546 SPN4546 5V 2A MOSFET N-channel

    Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4

    Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V spn4946
    Text: SPN4946 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4946 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		PDF SPN4946 SPN4946 0V/12A Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 4 N-CHANNEL ENHANCEMENT MODE POWER MOSFET 8A 60V

    SPN4900

    Abstract: SPN4900S8RGB
    Text: SPN4900 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN4900 is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to


    Original     		PDF SPN4900 SPN4900 SPN4900S8RGB