SPU07N20 Search Results

P-TO252

Abstract: SPD07N20 SPU07N20 AVALANCHE TRANSISTOR G10FS
Contextual Info: SPD07N20 Preliminary data SPU07N20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS on Package Ordering Code SPD07N20 200 V 7A 0.4 Ω P-TO252 C67078-S.-. - . SPU07N20 200 V 7A 0.4 Ω

Contextual Info: SPD07N20 SPU07N20 Preliminary data SIPMOS =Power-Transistor Product Summary Feature • N-Channel • Enhancement mode VDS 200 V R DS on 0.4 Ω 7 A ID • Avalanche rated P-TO251 • dv/dt rated P-TO252 Type Package Ordering Code Packaging SPD07N20 P-TO252

iss-400 diode

Abstract: SPD07N20
Contextual Info: SIEMENS SPD07N20 Preliminary data SPU07N20 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated Pin 1 Pin 2 Pin 3 G D S Type Vds h WDS on Package Ordering Code SPD07N20 200 V 7A 0.4 Q P-T0252 C67078-S.-. -. SPU07N20 200 V 7A

07N20

Abstract: P-TO252 SPD07N20 SPU07N20
Contextual Info: SPD 07N20 Preliminary Data SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated

Contextual Info: SPD 07N20 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Type

BUZ MOSFET

Abstract: mosfet BUZ 326 BUZ MOSFET 334 spd14n05 mosfet BUZ 349 mosfet buz 90a BUZ 100 MOSFET bup202 BUZ MOSFET 102s BUZ MOSFET 111S
Contextual Info: SIEMENS Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs U ♦ BS 107 200 26.00 0.8. 2.0 0.13 TO-92 BSS 192 -240 20.00 -2.0. .-0.8 BS 170 60 5.00 0.8. 2.0 0.30 TO-92 BSS 229 250 100.00 -1.8. .-0.7 0.07 TO-92 BSO 307N 30 0.075 1.2. 2.0 4.2 SO-8

07N20

Contextual Info: SPD 07N20 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Type

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

Contextual Info: SPD 07N20 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Packaging

Contextual Info: SPD 07N20 G SIPMOSÒ Power Transistor Features Product Summary • N channel Drain source voltage DS 200 V · Enhancement mode Drain-Source on-state resistance DS on 0.4 W · Avalanche rated Continuous drain current 7 A D · d /d rated Pin 1 Pin 2 Pin 3 Type

07N20

Abstract: SPD07N20 SPU07N20 SPD07N20G
Contextual Info: SPD 07N20 G SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated Pin 1 Type

07n20

Abstract: P-TO252 SPD07N20 SPU07N20
Contextual Info: Preliminary Data SPD 07N20 SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated

BUZ MOSFET

Abstract: mosfet BUZ 326 BUP 312 BSS 130 BUP 304 bup 313 615n60 BUZ 840 SGU06N60 BUP 307D
Contextual Info: s Power Semiconductors MOS Transistors IGBTs Duo-Packs FREDs tp :/ se /ww m w ic .s on ie du me ct ns or .d / e/ ht Product Information 04. 98 Fast IGBTs S-FET SO-8 D-PAK I-PAK MOS-Transistors in alphanumeric order VDS [V] R DSon [⏲] VGS th [V] I D [A] Package

Contextual Info: SPD 07N20 G SIPMOS Power Transistor Features Product Summary • N channel Drain source voltage VDS 200 V • Drain-Source on-state resistance RDS on 0.4 Ω Continuous drain current ID 7 A Enhancement mode • Avalanche rated • dv/dt rated 2 1 1 2 3