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    SRM20W116 Search Results

    SRM20W116 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SRM20W116LLRT2 EPSON 1M-BIT STATIC RAM Original PDF
    SRM20W116LLRT7 EPSON 1M-BIT STATIC RAM Original PDF
    SRM20W116LLRX2 EPSON 1M-BIT STATIC RAM Original PDF
    SRM20W116LLRX7 EPSON 1M-BIT STATIC RAM Original PDF
    SRM20W116LLTT2 EPSON 1M-BIT STATIC RAM Original PDF
    SRM20W116LLTT2 S-MOS Systems 1M-Bit Static RAM Original PDF
    SRM20W116LLTT2 EPSON 1 M-Bit Static RAM Scan PDF
    SRM20W116LLTT7 EPSON 1M-BIT STATIC RAM Original PDF
    SRM20W116LLTT7 S-MOS Systems 1M-Bit Static RAM Original PDF
    SRM20W116LLTT7 EPSON 1 M-Bit Static RAM Scan PDF
    SRM20W116LLTX2 EPSON 1M-BIT STATIC RAM Original PDF
    SRM20W116LLTX2 S-MOS Systems 1M-Bit Static RAM Original PDF
    SRM20W116LLTX2 EPSON 1 M-Bit Static RAM Scan PDF
    SRM20W116LLTX7 EPSON 1M-BIT STATIC RAM Original PDF
    SRM20W116LLTX7 S-MOS Systems 1M-Bit Static RAM Original PDF
    SRM20W116LLTX7 EPSON 1 M-Bit Static RAM Scan PDF

    SRM20W116 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    PF869-03

    Abstract: No abstract text available
    Text: PF869-03 SRM20W116LLTT2/7 1M-Bit Static RAM ge olta wV r Lo n e p Su eratio Op ducts Pro ● Super Low Voltage Operation and Low Current Consumption ● Access Time 120ns 1.8V / 70ns(2.7V) ● 65,536 Words X16-Bit Asynchtonous ● Wide Temperature Range • DESCRIPTION


    Original     		PDF PF869-03 SRM20W116LLTT2/7 120ns X16-Bit SRM20W116LLTT2/7 PF869-03

    Untitled

    Abstract: No abstract text available
    Text: PF867-03 SRM20W116LLTX2/7 1M-Bit Static RAM age ●Super Low Voltage Operation and Low Current Consumption ●Access Time 120ns 1.8V / 70ns (2.7V) ●65,536 WordsX16-Bit Asynchtonous ●Wide Temperature Range Volt ow L r e Sup eration Op ducts Pro • DESCRIPTION


    Original     		PDF PF867-03 SRM20W116LLTX2/7 120ns WordsX16-Bit SRM20W116LLTX2/7 16-bit

    Untitled

    Abstract: No abstract text available
    Text: SRM20W116LLTT2/7 1M-BIT STATIC RAM ● ● ● ● Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V /70ns (2.7V) 65,536 Words x 16-Bit Asynchronous Industrial Temperature Range • DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a


    Original     		PDF SRM20W116LLTT2/7 120ns /70ns 16-Bit SRM20W116LLTT2/7 -44pin-R1 81max 740max)

    Untitled

    Abstract: No abstract text available
    Text: SRM20W116LLTX2/7 1M-BIT STATIC RAM ● ● ● ● Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V /70ns (2.7V) 65,536 Words x 16-Bit Asynchronous Wide Temperature Range • DESCRIPTION The SRM20W116LLTX2/7 is a 65,536 words x 16-bit asychronous, random access memory on a


    Original     		PDF SRM20W116LLTX2/7 120ns /70ns 16-Bit SRM20W116LLTX2/7 -44pin-R1 81max 740max)

    upd444c

    Abstract: SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT
    Text: 1997 DATABOOK SRAM PRODUCTS 000-97-MEM-1.0 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: 408 922-0200 • Fax: (408) 922-0238 1 THIS PAGE INTENTIONALLY BLANK 2 S-MOS Systems, Inc. • 150 River Oaks Parkway • San Jose, CA 95134 • Tel: (408) 922-0200 • Fax: (408) 922-0238


    Original     		PDF 000-97-MEM-1 SRM2016C10/12 16K-Bit SRM2016C/MT12 SRM2264L10/12 64K-Bit -44pin-R1 81max upd444c SRM2016C12 SRM2264LC10 SRM2264lm10 SRM2B256SLMX55 SRM20100LRMT85 SRM2016C-12 SRM2016C SRM2264LCT10 SRM20100LMT

    SRM20W116LLTT2

    Abstract: SRM20W116LLTT7
    Text: EPSON PF869-03 SRM20W116 LLTT2/7 1M-Bit Static RAM • • • • Super Low Voltage Operation and Low Current Consumption Access Time 120ns 1.8V / 70ns(2.7V) 65,536 Words X16-Bit Asynchtonous Wide Temperature Range DESCRIPTION The SRM20W116LLTT2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic


    OCR Scan     		PDF PF869-03 SRM20W116LLTT2/7 120ns X16-Bit SRM20W116LLTT2/7 -44pin 740ma> 125toos SRM20W116LLTT2 SRM20W116LLTT7

    Untitled

    Abstract: No abstract text available
    Text: SRM20W116LLTT2/7 1M-BIT STATIC RAM • • Super Low Voltage Operation and Low Current Consum ption • Access Tim e 120ns 1.8V /70ns (2.7V) • 65,536 W ords x 16-Bit Asynchronous • Industrial Tem perature Range DESCRIPTION The SRM20W 116LLTT2/7 is a 65,536 words x 16-bit asynchronous, random access m em ory on a


    OCR Scan     		PDF SRM20W116LLTT2/7 120ns /70ns 16-Bit SRM20W 116LLTT2/7

    Untitled

    Abstract: No abstract text available
    Text: PF867-01 EPSON SRM20W116 LLTX2/7 1 M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns (2.7V) •6 5 ,5 3 6 W ordsXI 6-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SRM 20W 11 6 LLTX 2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic


    OCR Scan     		PDF PF867-01 SRM20W116 120ns 16-bit SRM20W116LLTX2/7

    SRM20W116LLTX2

    Abstract: No abstract text available
    Text: EPSON PF867-03 SRM20W116 LLTX2/7 1M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns (2.7V) •6 5 ,5 3 6 W ordsXI 6-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SRM 20W 116 LLTX 2/7 is a 65,536 words x 16-bit asynchronous, random access memory on a monolithic


    OCR Scan     		PDF PF867-03 SRM20W116LLTX2/7 120ns SRM20W116LLTX2/7 16-bit -44pin-R1 740ma> SRM20W116LLTX2

    Untitled

    Abstract: No abstract text available
    Text: SRM20W116LLTX2/7 1M-BIT STATIC RAM • • Super Low Voltage Operation and Low Current Consum ption • Access Tim e 120ns 1.8V /70ns (2.7V) • 65,536 W ords x 16-Bit Asynchronous • W ide Tem perature Range DESCRIPTION The SRM20W116LLTX2/7 is a 65,536 w ords x 16-bit asychronous, random access m em ory on a


    OCR Scan     		PDF SRM20W116LLTX2/7 120ns /70ns 16-Bit SRM20W116LLTX2/7 SRM20W 116LLTX2/7 -44pin

    Untitled

    Abstract: No abstract text available
    Text: EPSON PF869-01 SRM20W116 LLTT2/7 1M-Bit Static RAM •S u p e r Low Voltage Operation and Low Current Consumption •A c c e s s Time 120ns 1.8V / 70ns(2.7V) •6 5 ,5 3 6 Words X16-Bit Asynchtonous •W id e Temperature Range I DESCRIPTION The SR M 20W 1 16 LLTT 2/7 is a 65,536 words x16-bit asynchronous, random access memory on a monolithic


    OCR Scan     		PDF PF869-01 SRM20W116 120ns X16-Bit SRM20W116LLTT2/7

    UPD444C

    Abstract: SRM2264LC10 hm6116 SRM2264LCT10
    Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238


    OCR Scan     		PDF DIP-24pin OP2-24pin DIP-24pln OP-24pin DIP-28pin OP-28pin UPD444C SRM2264LC10 hm6116 SRM2264LCT10

    SRM2A256SLC

    Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
    Text: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0


    OCR Scan     		PDF SRM2264LC SRM2264LCT SRM2464MT* SRM2564C SRM2A256SLC SRM2A256LLMX SRM2A256LLCT SRM2B256SLMX 32KX8 SRM2B256SLMT SRM2A256SLC SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2564C SRM20100LMT tl512 SRM20116

    DIP28pin

    Abstract: sop6
    Text: Memories S tatic H A M s CMOS Static RAMs Wide temperature operation: —25 to +85°C P a rt n u m b e r C a p a c ity O ^ a r t a t o n Power s u p p ly (V ) C urre n t consum ption Operating S tandby (mA, Max.) i ^ A , Max.) Am bient te n $ d ra lu re


    OCR Scan     		PDF SRM2A256LLMX70 SRM2A256LLMX85 SRM2A256LLMX10 SRM2A1256LLMT DIP-28pin, OP2-28pin, -28pin -28pin-R1 -28pin, DIP28pin sop6