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    SRM226 Price and Stock

    Seiko Instruments Inc SRM2264LM12

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    Bristol Electronics SRM2264LM12 290
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    Seiko Instruments Inc SRM2264LM10

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    Bristol Electronics SRM2264LM10 47
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    Others SRM2264M12

    IC,SRAM,8KX8,CMOS,SOP,28PIN,PLASTIC
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    Quest Components SRM2264M12 111
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    Seiko Epson Corporation SRM2264C10

    STANDARD SRAM, 8KX8, 100NS, CMOS, PDIP28
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    Quest Components SRM2264C10 30
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    Seiko Epson Corporation SRM2264LM12

    IC,SRAM,8KX8,CMOS,SOP,28PIN,PLASTIC
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    Quest Components SRM2264LM12 14
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    SRM2264LM12 4
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    SRM2264LM12 3
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    ComSIT USA SRM2264LM12 1,655
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    SRM226 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SRM2261 S-MOS Systems High Speed 64K-Bit CMOS Static RAM Original PDF
    SRM2261C55 S-MOS Systems High Speed 64K-Bit CMOS Static RAM Original PDF
    SRM2261C70 S-MOS Systems High Speed 64K-Bit CMOS Static RAM Original PDF
    SRM2264L Unknown HIGH SPEED CMOS 64K BIT STATIC RAM Scan PDF
    SRM2264L10 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264L10 Unknown HIGH SPEED CMOS 64K BIT STATIC RAM Scan PDF
    SRM2264L12 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264L12 Unknown HIGH SPEED CMOS 64K BIT STATIC RAM Scan PDF
    SRM2264LC Unknown HIGH SPEED CMOS 64K BIT STATIC RAM Scan PDF
    SRM2264LC10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRM2264LC12 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRM2264LC90 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    SRM2264LCT10 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264LCT12 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264LM Unknown HIGH SPEED CMOS 64K BIT STATIC RAM Scan PDF
    SRM2264LM10 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264LM12 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264LMT10 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264LMT12 EPSON CMOS 64K-BIT STATIC RAM Original PDF
    SRM2264LTM10 EPSON CMOS 64K-BIT STATIC RAM Original PDF

    SRM226 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SRM2264lm10

    Abstract: SRM2264L10 SRM2264L DIP-28 SRM2264L12
    Text: SRM2264L10/12 CMOS 64K-BIT STATIC RAM ● Low Supply Current ● Access Time 100ns/120ns ● 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word × 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with back-up batteries. The asynchronous and static nature of the memory


    Original
    PDF SRM2264L10/12 64K-BIT 100ns/120ns SRM2264L10/12 192-word SRM2264L10 100pF 000-97-MEM-1 SRM2264lm10 SRM2264L10 SRM2264L DIP-28 SRM2264L12

    srm2264lct

    Abstract: SRM2264LCT12 SRM2264LCT10 srm2264lmt10
    Text: SRM2264LCT10/12 CMOS 64K-BIT STATIC RAM ● ● ● ● Industrial Temperature Range Low Supply Current Access Time 100ns/120ns 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264LCT10/12 is an 8,192-word × 8-bit asynchronous, static, random access memory on a


    Original
    PDF SRM2264LCT10/12 64K-BIT 100ns/120ns SRM2264LCT10/12 192-word 100pF 000-97-MEM-1 srm2264lct SRM2264LCT12 SRM2264LCT10 srm2264lmt10

    TMS44C256

    Abstract: HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross
    Text: ZMD Cross Reference List Density Organization Store Type 4Kbit 512 x 8 HardStore 16Kbit 2K x 8 CapStore PowerStore HardStore SoftStore PowerStore PowerStore 64Kbit 8K x 8 CapStore HardStore SoftStore PowerStore PowerStore 256Kbit 32K x 8 CapStore SoftStore


    Original
    PDF 16Kbit 64Kbit 256Kbit 600mil) 300mil) TMS44C256 HY6116 CROSS REFERENCE sram mcm6264 ZMD cross reference SIMTEK cross reference HM50464 soj28 sop28 HM65664A HM6116 oki cross

    srm20256-12

    Abstract: SRM2264 s1d13502 srm20256 640x240 SRM2264-10 srm20256-10 SRM2264 sram
    Text: S1D13502 Dot Matrix Graphics LCD Controller LCD Panel Options / Memory Requirements Document Number: X16-AN-005-08 Copyright 1995, 2001 Epson Research and Development, Inc. All Rights Reserved. Information in this document is subject to change without notice. You may download and use this document, but only for your own use in


    Original
    PDF S1D13502 X16-AN-005-08 S1D13502: S1D13502 srm20256-12 SRM2264 srm20256 640x240 SRM2264-10 srm20256-10 SRM2264 sram

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original
    PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    srm2264lct

    Abstract: No abstract text available
    Text: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


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    PDF SRM2264LTio/i2 64K-BIT SRM2264Lio/i2 SRM2264LTio 100ns SRM2264LT 120ns SRM2264LTio/i2 28-pin srm2264lct

    Untitled

    Abstract: No abstract text available
    Text: PF211-02 SRM2261Cs5 7o HIGH SPEED CMOS 64K-BIT STATIC RAM #Access Time 55ns/70ns # 6 5 ,5 3 6 Words X1 Bit Asynchronous #Low Supply Current •DESCRIPTION The SRM 2 2 6 IC 55/70 is a 65,536 words x 1 bit asynchronous, static, random access memory or a m onolithic


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    PDF PF211-02 64K-BIT 55ns/70ns SRM2261Cs5 SRM2261 22-pin

    SRM2261

    Abstract: SRM2261C55 SRM2261C70 AL221 2551 vn 001542
    Text: OB PF211-52 kT W ^ S Si A M. A i SYSTEMS HIGH SPEED 64K BIT CMOS STATIC RAM SRM2261C55 ' SRM2261C7o SRM2261 r ; 'S - ; 7v I DESCRIPTION T h e S R M 2 2 6 IC 55/70 is a 6 5 ,5 3 6 words * 1 bit asynchronous, static, random a c cess memory or a monolithic C M O S chip. Its very low standby power requirem ent m akes it ideal for applications requiring non-volatile


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    PDF PF211-52 SRM2261Cs5 SRM2261C7O SRM2261 SRM226IC55/70 SRM2261C55 SRM2261C/0 C22-9 22-pin OcVl985, SRM2261 SRM2261C70 AL221 2551 vn 001542

    SRM2264LM

    Abstract: No abstract text available
    Text: S R M 2 2 6 4 L i o 12 HIGH SPEED CMOS 64K-BIT STATIC RAM I DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


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    PDF 64K-BIT SRM2264Lio/i2 SRM2264Lio 100ns SRM2264Lia 120ns SRM2264Lao/io/i2 SRM2264Lio/iz 713Ma» 28-pin SRM2264LM

    SRM2264LM10

    Abstract: No abstract text available
    Text: SRM2264L10/12 CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264L10/12 is an 8,192-word x 8-bit asynchronous, static, random access m em ory on a m onolithic CM OS chip. Its very low standby power requirem ent makes it ideal for applications requir­


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    PDF SRM2264L10/12 64K-BIT 100ns/120ns SRM2264L10/12 192-word 2264L-0 2264L-2 P2-28pin* SRM2264LM10/12 SRM2264L10/12. SRM2264LM10

    2264LC

    Abstract: No abstract text available
    Text: SRM2264LCT10/12 CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8 Bits, Asynchronous • DESCRIPTION The SRM2264LCT10/12 is an 8,192-word x 8-bit asynchronous, static, random access m em ory on a


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    PDF SRM2264LCT10/12 64K-BIT 100ns/120ns SRM2264LCT10/12 192-word 000-97-MEM-1 2264LC

    TC551001a

    Abstract: CXK584000 Fujitsu FLL 100 SRM2264 cxk58527 uPD434000 lh5168 km6264 M5M51008 SRM20256
    Text: 8K X 8 HYUNDAI MITSUBISHI MOSEL S-MOS SAMSUNG SHARP SONY TOSHIBA 32K X HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 70/85/100/120 70/100/120/150 70/100 100/120 70/100/120 80/100 70/100 100/120/150 P-## P-## L-##PC LC-## A-##P -##L P-## ALP-##


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    PDF HY6264A M5M5165P MS6264 SRM2264 KM6264 LH5168 CXK5864B TC5565 HY62256A MB84256A TC551001a CXK584000 Fujitsu FLL 100 cxk58527 uPD434000 M5M51008 SRM20256

    SRM2A256SLC

    Abstract: SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2264LC SRM2564C SRM20100LMT tl512 SRM20116
    Text: Section 4 Memories SRM2264LC SRM2264LCT 64K 8KX8 Access tim e ns Part number Capacity(bits) Organization(bits) - SRM2464MT* 'K K K SRM2564C >r S afe RAM — I 32KX9 K 7 0 /8 5 /1 0 0 •SRM2A256LLMX 7 0 /8 5 /1 0 0 i SRM2A256LLCT 85/100 ■SRM2B256SLMX 5 5 /7 0 /1 0 0


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    PDF SRM2264LC SRM2264LCT SRM2464MT* SRM2564C SRM2A256SLC SRM2A256LLMX SRM2A256LLCT SRM2B256SLMX 32KX8 SRM2B256SLMT SRM2A256SLC SRM20100LLM srm2264lct SRM2A256LLCT SRM20100LL SRM2564C SRM20100LMT tl512 SRM20116

    SRM2264LCT

    Abstract: 2264L SRM2264
    Text: SRM2264L,m CMOS 64K-BIT STATIC RAM • Low Supply Current • Access Time 100ns/120ns • 8,192 Words x 8-Bit Asynchronous DESCRIPTION The SRM2264Lio/i2 is an 8,192 wordsx 8-bit asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage with


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    PDF SRM2264L 64K-BIT 100ns/120ns SRM2264Lio/i2 SRM2264Lio 100ns 120ns 100ns SRM2264LCT 2264L SRM2264

    Untitled

    Abstract: No abstract text available
    Text: PF215-52 SYSTEMS HIGH SPEED 16K BIT CMOS STATIC RAM SRM2267C45SRM2267C55 t i l ' 0 ! . SRM2267 /' •DESCRIPTION The SRM2267C45/55 is a 16,384 w o rd s x i bit asynchronous, static, random access memory on a monolithic CMOS chip. The asynchronous and static nature of the memory requires no external clock or refreshing circuit.


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    PDF PF215-52 SRM2267C45 SRM2267C5 SRM2267 SRM2267C45/55 SRM2267C45 SRM2267C55

    SRM2264LC90

    Abstract: srm2264lm90 SRM2264LC10 CS250 SRM2264 SRM2264L SRM2264L10 SRM2264L12 SRM2264LC
    Text: S R M 2 2 6 4 L i o 1 2 HIGH SPEED CMOS 64K-BIT STATIC RAM I DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage


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    PDF SRM2264L, 64K-BIT SRM2264Lio/i2 SRM2264Lio 100ns SRM2264Ã 120ns SRM2264L10/12 SRM2264LC90 srm2264lm90 SRM2264LC10 CS250 SRM2264 SRM2264L SRM2264L10 SRM2264L12 SRM2264LC

    Untitled

    Abstract: No abstract text available
    Text: PF215-02 S R M 2 2 6 7 C 4 5 /5 5 HIGH SPEED CMOS 16K-BIT STATIC RAM #Access Time 45ns/55ns #16,384 Words X1 Bit Asynchronous #Low Supply Current •DESCRIPTION The SRM2267C45/55 is a 16,384 words x 1 bit asynchronous, static, random access memory on a monolithic


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    PDF PF215-02 16K-BIT 45ns/55ns SRM2267C45/55 SRM2267C45 SRM2267C55 C20-9 20-pin

    Untitled

    Abstract: No abstract text available
    Text: • ■ ■ ■ s O B n  IL. .¿m .à PF211-52 5! iS SYSTEMS S! HIGH SPEED 64K BIT CMOS STATIC RAM SRM2261C55 * SRM2261C70 -r SRM2261 'S - 7v I DESCRIPTION The SRM226 IC 55/70 is a 65,536 w o r d s x i bit asynchronous, static, random access memory or a monolithic


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    PDF PF211-52 SRM2261C55 SRM2261C70 SRM2261 SRM226 C22-9 22-pin

    hm6265

    Abstract: SRM2264LC12 SRM2A256SLC70 SRM2A256LC 28-pin SRM2A256LC10 SRM2A256LLC70 SRM2A256SLC SRM2B257SLM70 srm20257lc
    Text: 4-1 Memories Static RAMs CMOS Static RAMs 5V operation P art num ber Pow er C ap acity Qganizafton supply (V) Ambient Operating Standby (mA, Max.) ( f t A, Max.) range OC) Access time (ns, Max.) 85 SRM2264LC90 SR M 2264LCio Current consumption 64K 8KX8


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    PDF SRM2264LC90 2264LCio SRM2264LC12 SRM2A256LC/0 SRM2A256LCB5 SRM2A256LC10 SRM2A256LLC70 SRM2A256LLC85 SRM2A256LLC10 SRM2A256SLC70 hm6265 SRM2A256LC 28-pin SRM2A256SLC SRM2B257SLM70 srm20257lc

    SED2000

    Abstract: 141T1 1sv73 jrc 319 ic "D312" D313 circuit diagram SRM2264 sram EG8001
    Text: SEDI 341 F oe CMOS VIDEO - LCD INTERFACE VLI • DESCRIPTION The SED1341 F o e is a VLI (Video-LCD Interface) which converts separate video signals for CRT displays into signals used with dot-matrix Liquid Crystal Displays (LCD). When a sync signal separator and a data separator


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    PDF SED1341 D1341 SED1341FOE SED1341F oc/SED1341F D-325 SED2000 141T1 1sv73 jrc 319 ic "D312" D313 circuit diagram SRM2264 sram EG8001

    UPD444C

    Abstract: SRM2264LC10 hm6116 SRM2264LCT10
    Text: Short Form Matrix Static Memory Line-Up The static nature of the memory requires no external clock or refreshing circuit and its very low power consumption makes it ideal for applications requiring non-volatile storage with back-up batteries. S-MOS Systems, Inc. •150 RlverOaks Parkway • San Jose, CA 95134 *Tel: 408 922-0200 • Fax: (408) 922-0238


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    PDF DIP-24pin OP2-24pin DIP-24pln OP-24pin DIP-28pin OP-28pin UPD444C SRM2264LC10 hm6116 SRM2264LCT10

    EG-8001

    Abstract: 14H1-100 1S2267 IC 2 5/EG8001 1sv73 eg8001 MAO-MA14 SED1341FOC
    Text: SEDI 341 CMOS VIDEO - LCD INTERFACE VLI • DESCRIPTION The SED1341 is a VLI (video-LCD interface) for converting previously separated video signals, intended for a CRT display, into signals compatible with dot-matrix liquid-crystal displays (LCDs). When sync and data


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    PDF SED1341 SED1341, D1341 SEL10 SED1341 SED1341FOC EG-8001 14H1-100 1S2267 IC 2 5/EG8001 1sv73 eg8001 MAO-MA14

    eg8001

    Abstract: EG-8001
    Text: SED1341 F o e CMOS VIDEO - LCD INTERFACE VLI • DESCRIPTION The SED1341 Foe is a VLI (Video-LCD Interface) which converts separate video signals for CRT displays into signals used with dot-matrix Liquid Crystal Displays (LCD). When a sync signal separator and a data separator


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    PDF SED1341 SED1341FOE 640x200 640x350 640x400 640x480 720x350 720x400 eg8001 EG-8001

    organizational structure samsung

    Abstract: NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256
    Text: Static RAM Cross Reference STATIC RAM CROSS REFERENCE ORGANIZATIONAL STRUCTURE 2K 2K X X 32K 8K X e w/CE, OE 8 W/CE1, CE2 X 8 Stow 8 Slow COMPETITIVE VENDOR SH ARP MODEL LH5116 LH5118 LH51256 LH5164A AMD Am9128 Harris CDM6116 Hitachi HM6116A Hyundai HY6116


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    PDF LH5116 Am9128 CDM6116 HM6116A HY6116 HM6116 MS6516 SRM2016 MK6116 CXK5816 organizational structure samsung NMS256X8 MICRON Cross Reference NMS256 256K RAM HM62256 MK6264 51256SL TC5565 "cross reference" MN44256 M5M5256