Mosfet
Abstract: SSF2312
Text: SSF2312 20V N-Channel MOSFET D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching
|
Original
|
PDF
|
SSF2312
SSF2312
OT-23
950TYP
550REF
Mosfet
|
SSF2312
Abstract: "battery protection"
Text: SSF2312 D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G S
|
Original
|
PDF
|
SSF2312
SSF2312
OT-23
"battery protection"
|
Untitled
Abstract: No abstract text available
Text: SSF2312 D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. G
|
Original
|
PDF
|
GDSSF2312
SSF2312
OT-23
PackageSOT-23
950TYP
550REF
|