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    53A8

    Abstract: No abstract text available
    Text: SSG4431 P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 5A - 30V 1 75 @VGS = - 5V 2 3 90 @VGS = - 4.5V 4 D (1,5,8) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.


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    SSG4431 53A8 PDF