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    Toshiba America Electronic Components SSM3J01T(TE85L.F)

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    Quest Components SSM3J01T(TE85L.F) 3,503
    • 1 $1.135
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    • 100 $1.135
    • 1000 $0.454
    • 10000 $0.3973
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    SSM3J01 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM3J01F Toshiba Metal oxide P-channel FET, Enhancement Type w. diode Original PDF
    SSM3J01F Toshiba P-Channel MOSFET Original PDF
    SSM3J01F Toshiba Scan PDF
    SSM3J01F Toshiba FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE Scan PDF
    SSM3J01T Toshiba Small-Signal MOS FETs(Single); Surface Mount Type: Y; Package: TSM; Number of Pins: 3; V th (V): (min -0.6) (max -1.1); R DS On 0.4 (max 0.6) 0.3 (max 0.4); Drain-Source Voltage (V): (max -30); Drain Current (mA): (max -1700) Original PDF
    SSM3J01T Toshiba Original PDF

    SSM3J01 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSM3J01T

    Abstract: No abstract text available
    Text: SSM3J01T 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J01T ○ パワーマネジメントスイッチ ○ 高速スイッチング • • • 単位: mm 小型パッケージで高密度実装に最適 オン抵抗が低い。


    Original     		PDF SSM3J01T SSM3J01T

    SSM3J01T

    Abstract: No abstract text available
    Text: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • · · Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)


    Original     		PDF SSM3J01T SSM3J01T

    Untitled

    Abstract: No abstract text available
    Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage


    Original     		PDF SSM3J01F O-236MOD SC-59

    Untitled

    Abstract: No abstract text available
    Text: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)


    Original     		PDF SSM3J01T

    Untitled

    Abstract: No abstract text available
    Text: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)


    Original     		PDF SSM3J01T

    SSM3J01F

    Abstract: No abstract text available
    Text: SSM3J01F 東芝電界効果トランジスタ シリコンPチャネルMOS形 SSM3J01F ○ パワーマネジメントスイッチ ○ 高速スイッチング 単位: mm • 小型パッケージで高密度実装に最適 • オン抵抗が低い。 : Ron = 0.4 Ω max (VGS = −4 V)


    Original     		PDF SSM3J01F O-236MOD SC-59 SSM3J01F

    Untitled

    Abstract: No abstract text available
    Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage


    Original     		PDF SSM3J01F O-236MOD SC-59

    SSM3J01F

    Abstract: No abstract text available
    Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage


    Original     		PDF SSM3J01F O-236MOD SC-59 SSM3J01F

    SSM3J01F

    Abstract: No abstract text available
    Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package • Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) • Low gate threshold voltage


    Original     		PDF SSM3J01F O-236MOD SC-59 SSM3J01F

    SSM3J01F

    Abstract: No abstract text available
    Text: SSM3J01F TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01F High Speed Switching Applications Unit: mm • Small package · Low on resistance : Ron = 0.4 Ω max (VGS = −4 V) : Ron = 0.6 Ω (max) (VGS = −2.5 V) · Low gate threshold voltage


    Original     		PDF SSM3J01F O-236MOD SC-59 SSM3J01F

    Untitled

    Abstract: No abstract text available
    Text: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)


    Original     		PDF SSM3J01T

    SSM3J01T

    Abstract: No abstract text available
    Text: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit: mm Small Package Low on Resistance : Ron = 0.4 Ω max (@VGS = −4 V) : Ron = 0.6 Ω (max) (@VGS = −2.5 V)


    Original     		PDF SSM3J01T SSM3J01T

    SSM3J01T

    Abstract: No abstract text available
    Text: SSM3J01T TOSHIBA Field Effect Transistor Silicon P Channel MOS Type SSM3J01T Power Management Switch High Speed Switching Applications • • • Unit in mm Small Package Low on Resistance : Ron = 0.4 Ω max (＠VGS = −4 V) : Ron = 0.6 Ω (max) (＠VGS = −2.5 V)


    Original     		PDF SSM3J01T SSM3J01T

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


    Original     		PDF

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


    Original     		PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


    Original     		PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入


    Original     		PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s


    OCR Scan     		PDF SSM3J01F SSM3J01 O-236MOD SC-59

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS U nit in mm + 0.5 • Small Package • Low on Resistance • Low Gate Threshold Voltage : Ron = 0.4 Cl Max. (VQg : Ron = 0.6 O (Max.) (Vq s


    OCR Scan     		PDF SSM3J01F SSM3J01 O-236MOD SC-59

    SSM3J01F

    Abstract: No abstract text available
    Text: TO SH IBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS Unit in mm + 0.5 • Small Package • Low on Resistance • : Ron = 0.4 Cl Max. (VQg —4 V) : Ron = 0.6 O (Max.) (Vq s - 2 . 5 V)


    OCR Scan     		PDF SSM3J01F SSM3J01 SSM3J01F

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM3J01F TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE SSM3J01 F HIGH SPEED SWITCHING APPLICATIONS • • • + 0.5 Small Package Low on Resistance : Ron = 0.4 Cl Max. (V qs = —4 V) : Ron = 0.6 il (Max.) (Vq s = -2 .5 V) LowGate Threshold Voltage


    OCR Scan     		PDF SSM3J01F SSM3J01 O-236MOD SC-59