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    SSM6N04FU Search Results

    SSM6N04FU Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSM6N04FU Toshiba Small-Signal MOS FETs (Dual); Surface Mount Type: Y; Package: US6; XJE016 JEITA: SC-88; Number of Pins: 6; Internal connection: Independent; Comments: Built-in R_GS=1MO; V_DS(Q1), max (V): (max 20); V_GSS(Q1), max (V): (max 10); I_D Q1, max (mA): (max 100) Original PDF
    SSM6N04FU Toshiba Matched Pair of N-Channel Enhancement MOSFETs Scan PDF

    SSM6N04FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSM6N04FU

    Abstract: No abstract text available
    Text: SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications • • • • Unit: mm With built-in gate-source resistor: RGS = 1 MΩ typ. 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package


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    PDF SSM6N04FU SSM6N04FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. • 2.5 V gate drive • Low gate threshold voltage: Vth = 0.7~1.3 V • Small package


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    PDF SSM6N04FU

    Untitled

    Abstract: No abstract text available
    Text: SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications • • • • Unit: mm With built-in gate-source resistor: RGS = 1 MΩ typ. 2.5 V gate drive Low gate threshold voltage: Vth = 0.7~1.3 V Small package


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    PDF SSM6N04FU

    SSM6N04FU

    Abstract: No abstract text available
    Text: SSM6N04FU 東芝電界効果トランジスタ シリコンNチャネルMOS形 SSM6N04FU ○ 高速スイッチング用 単位: mm • ゲート・ソース間抵抗内蔵 : RGS = 1 MΩ typ. • Vth が低く低電圧での CMOS などからの直接駆動が可能。


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    PDF SSM6N04FU SSM6N04FU

    SSM6N04FU

    Abstract: No abstract text available
    Text: SSM6N04FU TOSHIBA Field Effect Transistor Silicon N Channel MOS Type SSM6N04FU High Speed Switch Applications Unit: mm • With built-in gate-source resistor: RGS = 1 MΩ typ. · 2.5 V gate drive · Low gate threshold voltage: Vth = 0.7~1.3 V · Small package


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    PDF SSM6N04FU SSM6N04FU

    5252 F 1009 4-pin

    Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025
    Text: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


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    PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    SSM3K7002

    Abstract: ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T
    Text: S-MOS Series Small-Signal MOSFETs for Switching PRODUCT GUIDE S -MOS Family S-MOS Family Toshiba presents a range of small-signal MOSFET S-MOS devices which have been developed for various switching, interface and DC/DC converter applications. These MOSFETs have been classified into families according to application,


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    PDF 3402C-0209 SSM3K7002 ESM 310 SSM3J16FU SSM3K03TE zener diode reference guide SSM5N03FE US6 KEC SSM5G01TU 6798 SSM3J13T

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


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    PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


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    PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    2SK4207

    Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082B BCJ0082A 2SK4207 to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03

    TOSHIBA MG150N2YS40

    Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
    Text: 小信号トランジスタ SMD ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製 品の誤作動や故障により、生命・身体・財産が侵害されることのないように、購入


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    PDF 050106DAA1 /SC-70 YTF612 2SK2381 YTF841 2SK2387 YTF442 2SK2149 YTF613 TOSHIBA MG150N2YS40 mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40

    TPCA*8064

    Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028
    Text: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082B TPCA*8064 TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA*8077 TPCA8028

    8aa1

    Abstract: esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168
    Text: 小型面実装MOS FET S-MOSシリーズ ● 当社は品質、信頼性の向上に努めておりますが、一般に半導体製品は誤作動した り故障することがあります。当社半導体製品をご使用いただく場合は、半導体製


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    PDF 050106DAA1 12341D3AG BDJ0099A 8aa1 esm 310 2SK982 733 SSOP10 kef q1 datasheet SSM3J13T SSM3K03TE 2SJ148 2SJ167 2SJ168

    transistor bc 245

    Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122
    Text: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243


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    PDF SC-43) 2SC1815 TPS615 TPS616 TPS610 transistor bc 245 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122

    tpc8118 equivalent replacement

    Abstract: SSM3J307T Zener diode smd 071 A01
    Text: 2009-9 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4


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    PDF BCE0082A tpc8118 equivalent replacement SSM3J307T Zener diode smd 071 A01

    TPCA*8030

    Abstract: lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558
    Text: 製品カタログ 2009-9 東芝半導体 製品カタログ 汎用小信号面実装対応素子 (トランジスタダイオード、セルパック) SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S


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    PDF TC7SZ126FU SC-88A OT-353 BCJ0052E BCJ0052D TPCA*8030 lm2804 TPCA*8036 2SK2033 TPC8037 Sj 88a diode TPCA8028 TPC8A03 TC4W53FU IC sj 4558

    HN4C06J

    Abstract: te85l F 1SS302 2SC4117 SUFFIX TE85L Toshiba 2SK2145 HN1B04FE rn4983 US6 KEC RN1306
    Text: Small-Signal Multi-Chip Discrete Devices Transistors and Diodes PRODUCT GUIDE Contents What Is a Multi-Chip Discrete Device? • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • • 2


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    BSS138 NXP

    Abstract: FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250
    Text: NXP small-signal N- and P-channel MOSFETs Small-signal MOSFETs optimized for a broad range of applications Our advanced MOSFET solutions deliver the flexibility and performance that today’s market demands. Choose from a wide range of general-purpose MOSFET solutions, available in a variety


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    PDF OT223 OT883 PHT8N06LT BSP030 PMN50XP PMN55LN PMN34LN BSH103 BSS138 NXP FDC642P 2n7002 nxp AO3401 BSS123 NXP BSH103 IRLL014N PMV65XP BSH108 BSP250

    TPCA8077

    Abstract: TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ MOSFET h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3


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    PDF BCJ0082C BCJ0082B TPCA8077 TK12A10K3 TK25E06K3 TPCA*8030 TJ11A10M3 SSM6J501NU TPCA8057-H 2SK4112 TPC8217-H TK50E06K3A

    marking MOW

    Abstract: No abstract text available
    Text: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : Rq § = 1 MO Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V Small Package


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    PDF SSM6N04FU marking MOW

    SSM6N04FU

    Abstract: No abstract text available
    Text: TO SH IBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS • • • • With Built-in Gate-Source Resistor : Rq § = 1 M il Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V


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    PDF SSM6N04FU SSM6N04FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU Unit in mm HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : R@g = 1 M il Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V ^ = 0.7~1.3V Small Package


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    PDF SSM6N04FU

    Untitled

    Abstract: No abstract text available
    Text: T O SH IB A SSM6N04FU TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE SSM6N04FU HIGH SPEED SWITCH APPLICATIONS With Built-in Gate-Souree Resistor : RQg = 1 Mil Typ. 2.5 V Gate Drive Low Gate Threshold Voltage : V^h = 0.7~1.3 V Small Package MAXIMUM RATINGS (Ta = 25°C) (Q1, Q2 COMMON)


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    PDF SSM6N04FU