ST1200FXF21 Search Results

ST1200FXF21 Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
ST1200FXF21		Toshiba	Silicon N Channel Press Pack IGBT		Original	PDF
ST1200FXF21		Toshiba	IGBT		Original	PDF

ST1200FXF21 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering	Original	ST1200FXF21 500-V, 000-A 300-V, 200-A	PDF
Press pack IGBT Toshiba Abstract: press-pack igbt sg6105dz ST1200 TOSHIBA IGBT DATA BOOK Vcc-1500 ST1200FXF21 Diode BY 1200 Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package · Anti-parallel fast recovery diode in this package	Original	ST1200FXF21 Press pack IGBT Toshiba press-pack igbt sg6105dz ST1200 TOSHIBA IGBT DATA BOOK Vcc-1500 ST1200FXF21 Diode BY 1200	PDF
str 6307 Abstract: str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module Text: ST1200FXF21 NEW PRODUCT GUIDE Outline As the successor to the 2500-V, 1000-A insulated-gate bipolar transistor IGBT , Toshiba are marketing their newly developed 3300-V, 1200-A IGBT, which comes in a flat package with compression-bonded encapsulation. The new IGBT uses Toshiba’s original multi-pellet alloy-free assembly structure. The bonding wires and soldering	Original	ST1200FXF21 500-V, 000-A 300-V, 200-A str 6307 str 6307 datasheet STR 6307 POWER sg6105dz Toshiba IGBT 1200A 3300V toshiba gto TOSHIBA IGBT snubber STR S 6307 toledo TOSHIBA str module	PDF
Press pack IGBT Toshiba Abstract: transistor bipolar Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package • Anti-parallel fast recovery diode in this package	Original	ST1200FXF21 Press pack IGBT Toshiba transistor bipolar	PDF
Press pack IGBT Toshiba Abstract: No abstract text available Text: ST1200FXF21 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel Press Pack IGBT ST1200FXF21 High Power Switching Applications Motor Control Applications Unit: mm • All electric contacts by pressure structure and airtight package • Anti-parallel fast recovery diode in this package	Original	ST1200FXF21 20max 68max 120max Press pack IGBT Toshiba	PDF