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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	PDF	ST3401M23RG ST3401M23RG OT-23-3L -30V/-4 -30V/-3 STP3401M23RG

Catalog Datasheet

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Untitled

Abstract: No abstract text available
Text: ST3401M23RG P Channel Enhancement Mode MOSFET -4.0A DESCRIPTION ST3401M23RG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

Original

PDF

ST3401M23RG ST3401M23RG OT-23-3L -30V/-4 -30V/-3 STP3401M23RG