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Untitled Abstract: No abstract text available Text: ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are	Original	ST3407SRG ST3407SRG OT-23 -30V/-4 -30V/-3	PDF

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Abstract: No abstract text available
Text: ST3407SRG P Channel Enhancement Mode MOSFET -3.6A DESCRIPTION ST3407SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are

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ST3407SRG ST3407SRG OT-23 -30V/-4 -30V/-3

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