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    STMicroelectronics STGW25H120DF2

    IGBT H-SERIES 1200V 25A TO-247
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    DigiKey STGW25H120DF2 Tube 491 1
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    Avnet Americas STGW25H120DF2 Tube 600 15 Weeks 30
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    Mouser Electronics STGW25H120DF2 417
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    STMicroelectronics STGW25H120DF2 417 1
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    TME STGW25H120DF2 1
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    Avnet Silica STGW25H120DF2 16 Weeks 30
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    STGW25H120DF Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    STGW25H120DF2 STMicroelectronics Discrete Semiconductor Products - Transistors - IGBTs - Single - IGBT H-SERIES 1200V 25A TO-247 Original PDF

    STGW25H120DF Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    internal structure of ic 741

    Abstract: internal circuit diagram of IC 741 ic 741 DIODE STGW25H120DF
    Text: STGW25H120DF 25 A, 1200 V, field stop trench gate IGBT with Ultrafast diode Preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Easy paralleling ■ Ultra fast free-wheeling diode co-packaged ■ Low thermal resistance


    Original     		STGW25H120DF O-247 internal structure of ic 741 internal circuit diagram of IC 741 ic 741 DIODE STGW25H120DF PDF

    GW25

    Abstract: STGW25H120DF2
    Text: STGW25H120DF2 1200 V, 25 A high speed trench gate field-stop IGBT Datasheet − preliminary data Features • Maximum junction temperature : TJ = 175 °C ■ High speed switching ■ Minimized tail current ■ Low saturation voltage: VCE sat = 2.1 V (typ.)


    Original     		STGW25H120DF2 O-247 GW25 STGW25H120DF2 PDF

    GW25

    Abstract: No abstract text available
    Text: STGW25H120DF High speed 25 A, 1200 V, trench gate field stop IGBT Datasheet − preliminary data Features • Very high speed switching ■ Tight parameters distribution ■ Tail-less switching off ■ Ultrafast free-wheeling diode co-packaged ■ Low thermal resistance


    Original     		STGW25H120DF O-247 GW25 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - preliminary data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A


    Original     		STGW25H120DF2 O-247 DocID023752 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW25H120DF2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A


    Original     		STGW25H120DF2 O-247 DocID023752 PDF

    Untitled

    Abstract: No abstract text available
    Text: STGW25H120F2 Trench gate field-stop IGBT, H series 1200 V, 25 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C • High speed switching series • Minimized tail current • VCE sat = 2.1 V (typ.) @ IC = 25 A


    Original     		STGW25H120F2 O-247 SC12850 DocID026003 PDF