Untitled
Abstract: No abstract text available
Text: A POW ERHOUSE BIPOLAR NPN PLANAR POWER T R A N S IS T O R S TO-257 DEVICE TYPE PEAK VCE sen 70 5.0 40-120 1.0/2.0 2.4 5.0/0.5 STP3996 80 5.0 40-120 1.0/2.0 0.3 1.0/0.1 STP3997 80 5.0 80-240 1.0/2.0 0.3 1.0/0.1 STP5660 200 5.0 40-120 0.5/5.0 1.0 2.0/0.4 STP5661
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O-257
STP2880
STP3996
STP3997
STP5660
STP5661
STP5664
STP5665
STP5427
STP5428
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Untitled
Abstract: No abstract text available
Text: BIPOLAR NPN PLANAR POWER TRANSISTORS TO-257 DEVICE TYPE PEAK •c @ 'b 1.0/2.0 2.4 5.0/0.5 40-120 1.0/2.0 0.3 1.0/0.1 5.0 80-240 1.0/2.0 0.3 1.0/0.1 200 5.0 40-120 0.5/5.0 1.0 2.0/0.4 STP5661 300 5.0 25- 75 0.5/5.0 1.0 2.0/0.4 STP5664 200 10.0 40-120 1.0/5.0
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STP5664
STP5665
STP5427
STP5428
STP5429
STP5430
STP3997
STP3997
STP5660
STP2880
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SILICON TRANSISTOR CORP
Abstract: STP515 2N4114 2N4211 2n5609 transistor 2N5627 2N5678 2N5251 2n5609 stp6060
Text: SILICON TRANSISTOR CORP 47E D • 8E54022 OOOOflll t. « S T C 2 AMP T*VS*07 5 AMP Ic CONTINUOUS NPN TYPICAL SPECIFICATIONS VCEO To 300V hFE 20-120 PACKAGE y ^ « 1A 5V r a TO-257 I PNP v c e o t o io o v VCEO To 300V VCEO To 100V h FE20-120(a1A 5 V hFE 20-120 2 .5 A 5 V
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8E54022
FE20-120
30MHz
fTTo40M
50MHz
2N4863
2N5662
N5663
2N5333
SILICON TRANSISTOR CORP
STP515
2N4114
2N4211
2n5609 transistor
2N5627
2N5678
2N5251
2n5609
stp6060
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STP5661
Abstract: No abstract text available
Text: tt < mi o fr BIPOLAR N P N P O W E R TR A N SISTO R S PEAK PACKAGE TO-254 VCE sat DEVICE bvceo «C hFE TYPE VOLTS AMPS min/m ax STP4070 STP4071 STP5622 STP5624 STP5626 STP5628 STP6274 STP6275 STP6276 STP6277 STP6338 STP6339 STP6340 STP6341 100 150 60 80
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O-254
STP4070
STP4071
STP5622
STP5624
STP5626
STP5628
STP6274
STP6275
STP6276
STP5661
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