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Vishay Siliconix SUB75P03-07-E3 MOSFET P-CH 30V 75A TO263
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DigiKey	SUB75P03-07-E3	Cut Tape			1	1 $5.29 10 $5.29 100 $5.29 1000 $5.29 10000 $5.29	Buy Now
	SUB75P03-07-E3	Digi-Reel			1	1 $5.29 10 $5.29 100 $5.29 1000 $5.29 10000 $5.29	Buy Now
	SUB75P03-07-E3	Reel			800	1 - 10 - 100 - 1000 $1.99414 10000 $1.975	Buy Now
Vishay Intertechnologies SUB75P03-07-E3
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Bristol Electronics	SUB75P03-07-E3		800			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Siliconix SUB75P03-07 TRANSISTOR,MOSFET,P-CHANNEL,30V V(BR)DSS,75A I(D),TO-263AB
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Quest Components	SUB75P03-07		20			1 $6.09 10 $3.045 100 $3.045 1000 $3.045 10000 $3.045	Buy Now
Vishay Siliconix SUB75P03-08
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Quest Components	SUB75P03-08		8			1 $6.09 10 $3.045 100 $3.045 1000 $3.045 10000 $3.045	Buy Now
Vishay Siliconix SUB75P0308 Electronic Component
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ComSIT USA	SUB75P0308		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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SUB75P03 Datasheets (4)

Part	Manufacturer	Description	Datasheet Type	PDF
SUB75P03-07	Vishay Siliconix	MOSFETs	Original	PDF
SUB75P03-07-E3	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 75A D2PAK	Original	PDF
SUB75P03-08	Vishay Intertechnology	P-Channel 30-V (D-S), 175°C MOSFET	Original	PDF
SUB75P03-08 SPICE Device Model	Vishay	P-Channel Enhancement-Mode Transistor	Original	PDF

SUB75P03 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
SUP75P03-07-E3 Abstract: No abstract text available Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available	Original	SUB75P03-07, SUP75P03-07 2002/95/EC O-220AB O-263 SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 SUP75P03-07-E3	PDF
SUB75P03-07 Abstract: SUP75P03-07 a2005v Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available	Original	SUB75P03-07, SUP75P03-07 2002/95/EC O-263 O-220AB SUB75P03-07 O-263) SUB75P03-07-E3 SUB75P03-07 SUP75P03-07 a2005v	PDF
A2005V Abstract: SUB75P03-07 SUP75P03-07 Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View	Original	SUP/SUB75P03-07 O-220AB O-263 SUB75P03-07 SUP75P03-07 O-220AB O-263) O-263 S-00821--Rev. 24-Apr-00 A2005V SUB75P03-07 SUP75P03-07	PDF
SUP75P03-07-E3 Abstract: SUB75P03-07 SUP75P03-07 Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View	Original	SUP/SUB75P03-07 O-263 O-220AB SUB75P03-07 SUP75P03-07 O-263) SUP75P03-07-E3 O-263, SUP75P03-07-E3 SUB75P03-07 SUP75P03-07	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75P03-08 18-Jul-08	PDF
SUB75P03-08 Abstract: SUP75P03-08 Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)	Original	SUP/SUB75P03-08 O-220AB O-263 SUB75P03-08 SUP75P03-08 O-220AB O-263) 18-Jul-08 SUB75P03-08 SUP75P03-08	PDF
Untitled Abstract: No abstract text available Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available	Original	SUB75P03-07, SUP75P03-07 2002/95/EC O-263 O-220AB SUB75P03-07 O-263) SUB75P03-07-E3	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB75P03-08 Siliconix P-Channel 75-V D-S , 175_C MOSFET Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TOĆ220AB TOĆ263 G DRAIN connected to TAB G D S Top View GD S D SUB75P03Ć08 Top View PĆChannel MOSFET SUP75P03Ć08 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted)	Original	SUP/SUB75P03-08 O220AB SUB75P0308 SUP75P0308 O-220AB O-263) O-263 S-57253--Rev. 24-Feb-98	PDF
SUB75P03-07 Abstract: SUP75P03-07 Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View	Original	SUP/SUB75P03-07 O-263 O-220AB SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 O-263, SUB75P03-07 SUP75P03-07	PDF
SUB75P03-07 Abstract: SUB75P03-07-E3 to263 package RthJA SUP75P03-07 TO-263CA Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View	Original	SUP/SUB75P03-07 O-263 O-220AB SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 O-263, SUB75P03-07 SUB75P03-07-E3 to263 package RthJA SUP75P03-07 TO-263CA	PDF
Untitled Abstract: No abstract text available Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available	Original	SUB75P03-07, SUP75P03-07 2002/95/EC O-263 O-220AB SUB75P03-07 O-263) SUB75P03-07-E3	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SUP/SUB75P03-08 Vishay Siliconix P-Channel Enhancement-Mode Transistor CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75P03-08 18-Apr-01	PDF
Untitled Abstract: No abstract text available Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available	Original	SUB75P03-07, SUP75P03-07 2002/95/EC O-263 O-220AB SUB75P03-07 O-263) SUB75P03-07-E3	PDF
SUB75P03-07 Abstract: SUP75P03-07 Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175 °C MOSFET PRODUCT SUMMARY rDS(on) (Ω) ID (A)a 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT VDS (V) - 30 Available TO-263 TO-220AB S G DRAIN connected to TAB D S Top View	Original	SUP/SUB75P03-07 O-263 O-220AB SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3 O-263, SUB75P03-07 SUP75P03-07	PDF

Untitled Abstract: No abstract text available Text: SUB75P03-07, SUP75P03-07 Vishay Siliconix P-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 a • Compliant to RoHS Directive 2002/95/EC RDS(on) () ID (A) 0.007 at VGS = - 10 V ± 75 RoHS* 0.010 at VGS = - 4.5 V ± 75 COMPLIANT Available	Original	SUB75P03-07, SUP75P03-07 2002/95/EC O-220AB O-263 SUB75P03-07 SUP75P03-07 O-263) SUB75P03-07-E3	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75P03-07 18-Jul-08	PDF
SUB75P03-07 Abstract: SUP75P03-07 99537 Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel Enhancement-Mode Transistors PRODUCT SUMMARY rDS on (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View	Original	SUP/SUB75P03-07 O-220AB O-263 SUB75P03-07 SUP75P03-07 O-220AB O-263) O-263 S-99537--Rev. 20-Dec-99 SUB75P03-07 SUP75P03-07 99537	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)	Original	SUP/SUB75P03-08 O-220AB O-263 SUP75P03-08 SUB75P03-08 O-220AB O-263) O-263 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175_C MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)a 0.007 @ VGS = –10 V "75 0.010 @ VGS = –4.5 V "75 VDS (V) –30 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-07 Top View	Original	SUP/SUB75P03-07 O-220AB O-263 SUP75P03-07 SUB75P03-07 O-220AB O-263) O-263 08-Apr-05	PDF
Untitled Abstract: No abstract text available Text: SPICE Device Model SUP/SUB75P03-07 Vishay Siliconix P-Channel 30-V D-S 175°C MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	SUP/SUB75P03-07 S-71505Rev. 06-Aug-07	PDF
SUP75P03-08 Abstract: No abstract text available Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)	Original	SUP/SUB75P03-08 O-220AB O-263 SUB75P03-08 SUP75P03-08 O-220AB O-263) S-63480--Rev. 12-Jul-99 SUP75P03-08	PDF
SUB75P03-08 Abstract: SUP75P03-08 Text: SUP/SUB75P03-08 Vishay Siliconix P-Channel 30-V D-S , 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) –30 0.008 –75a S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB75P03-08 Top View P-Channel MOSFET SUP75P03-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)	Original	SUP/SUB75P03-08 O-220AB O-263 SUB75P03-08 SUP75P03-08 O-220AB O-263) S-05111--Rev. 10-Dec-99 SUB75P03-08 SUP75P03-08	PDF
AN609 Abstract: SUB75P03-07 Text: SUB75P03-07_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	SUB75P03-07 AN609 22-Aug-07	PDF
56088 Abstract: No abstract text available Text: Tem ic SUP/SUB75P03-08 S em i co n d u c t or s P-Channel Enhancement-Mode Transistors Product Summary V BR DSS (V) -3 0 I d (A) r DS(on) ( ^ ) 0.008 -7 5 a T0-220AB o TO-263 < ni 1 n DRAIN connected to TAB G D S Top View GD S o D SUB75P03-08 Top View SUP75P03-08	OCR Scan	SUP/SUB75P03-08 T0-220AB O-263 SUP75P03-08 SUB75P03-08 T0-220AB O-263) O-263 S-56088--Rev. 19-Dec-97 56088	PDF

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SUB75P03 Datasheets (4)

SUB75P03 Datasheets Context Search

SUP75P03-07-E3

SUB75P03-07

A2005V

SUP75P03-07-E3

Untitled

SUB75P03-08

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SUB75P03-07

SUB75P03-07

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SUB75P03-07

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SUB75P03-07

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SUP75P03-08

SUB75P03-08

AN609

56088