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    Untitled

    Abstract: No abstract text available
    Text: SUN10A60F New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.)  Low gate charge: Qg=33nC (Typ.)  Low reverse transfer capacitance: Crss=12.5pF (Typ.)  Lower EMI noise


    Original     		PDF SUN10A60F O-220F-3L SUN10A60 SDB20D45 20-AUG-14 KSD-T0O158-000

    Untitled

    Abstract: No abstract text available
    Text: SUN10A60FD New Generation N-Ch Power MOSFET HIGH SPEED SWITCHING APPLICATION Features • Low drain-source On resistance: RDS on =0.6Ω (Typ.)  Low gate charge: Qg=33nC (Typ.)  Low reverse transfer capacitance: Crss=12.5pF (Typ.)  Lower EMI noise


    Original     		PDF SUN10A60FD O-220F-3L SUN10A60 SDB20D45 09-JUL-14 KSD-T0O159-000