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    SI3433 Price and Stock

    Vishay Siliconix SI3433CDV-T1-GE3

    MOSFET P-CH 20V 6A 6TSOP
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    DigiKey SI3433CDV-T1-GE3 Cut Tape 9,481 1
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    SI3433CDV-T1-GE3 Digi-Reel 9,481 1
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    SI3433CDV-T1-GE3 Reel 9,000 3,000
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    RS SI3433CDV-T1-GE3 Bulk 3,000
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    Chip 1 Exchange SI3433CDV-T1-GE3 2,587
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    New Advantage Corporation SI3433CDV-T1-GE3 45,000 1
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    Vishay Siliconix SI3433CDV-T1-BE3

    P-CHANNEL 20-V (D-S) MOSFET
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    DigiKey SI3433CDV-T1-BE3 Digi-Reel 5,400 1
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    SI3433CDV-T1-BE3 Cut Tape 5,400 1
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    SI3433CDV-T1-BE3 Reel 3,000 3,000
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    Vishay Siliconix SI3433CDV-T1-E3

    MOSFET P-CH 20V 6A 6TSOP
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    DigiKey SI3433CDV-T1-E3 Digi-Reel 1,280 1
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    SI3433CDV-T1-E3 Cut Tape 1,280 1
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    SI3433CDV-T1-E3 Reel 3,000
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    Vishay Siliconix SI3433BDV-T1-E3

    MOSFET P-CH 20V 4.3A 6TSOP
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    SI3433BDV-T1-E3 Digi-Reel 1
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    SI3433BDV-T1-E3 Reel
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    Bristol Electronics SI3433BDV-T1-E3 500 7
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    Quest Components SI3433BDV-T1-E3 400
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    Vishay Siliconix SI3433BDV-T1-GE3

    MOSFET P-CH 20V 4.3A 6TSOP
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    SI3433 Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI3433 Vishay Telefunken Original PDF
    SI3433BDV Vishay Siliconix MOSFETs Original PDF
    Si3433BDV Vishay Telefunken P-channel 1.8-v (g-s) Mosfet Original PDF
    Si3433BDV SPICE Device Model Vishay P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI3433BDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.3A 6-TSOP Original PDF
    SI3433BDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 4.3A 6-TSOP Original PDF
    SI3433CDV-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A 6TSOP Original PDF
    SI3433CDV-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 20V 6A 6TSOP Original PDF
    Si3433DV Vishay Intertechnology P-Channel 1.8-V (G-S) MOSFET Original PDF
    SI3433DV Vishay Telefunken Original PDF
    Si3433DV SPICE Device Model Vishay P-Channel xx-V (x-S) MOSFET Original PDF

    SI3433 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Si3433CD

    Abstract: SI3433CDV-T1 Vishay DaTE CODE tsop-6 Si3433CDV
    Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si3433CDV Si3433CDV-T1-E3 Si3433CDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 Si3433CD SI3433CDV-T1 Vishay DaTE CODE tsop-6

    SI3433BDV

    Abstract: No abstract text available
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3433BDV 2002/96/EC Si3433BDV-T1-E3 Si3433BDV-T1-GE3 18-Jul-08

    SI3433BDV-T1-E3

    Abstract: Si3433BDV Si3433BDV-T1 Si3433DV si3433
    Text: Specification Comparison Vishay Siliconix Si3433BDV vs. Si3433DV Description: P-Channel, 1.8 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3433BDV-T1 Replaces Si3433DV-T1 Si3433BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3433DV-T1


    Original     		PDF Si3433BDV Si3433DV Si3433BDV-T1 Si3433DV-T1 Si3433BDV-T1-E3 06-Nov-06 si3433

    Si3433BDV

    Abstract: Si3433BDV-T1-E3 Si3433BDV-T1 SI3433B
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D


    Original     		PDF Si3433BDV Si3433BDV-T1 Si3433BDV-T1--E3 08-Apr-05 Si3433BDV-T1-E3 SI3433B

    AN609

    Abstract: Si3433DV 73519
    Text: Si3433DV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3433DV AN609 30-Nov-05 73519

    SI3433BDV-T1

    Abstract: SI3433BDV
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3433BDV 2002/95/EC Si3433BDV-T1-E3 Si3433BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 SI3433BDV-T1

    Si3433CDV

    Abstract: SI3433CDV-T1-GE3
    Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si3433CDV Si3433CDV-T1-E3 Si3433CDV-T1-GE3 11-Mar-11

    P-Channel 1.8V MOSFET

    Abstract: Si3433DV
    Text: SPICE Device Model Si3433DV P-Channel 1.8-V G-S MOSFET Characteristics • P-channel Vertical DMOS • Macro-Model (Sub-Circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range • Models Gate Charge, Transient, and Diode Reverse


    Original     		PDF Si3433DV P-Channel 1.8V MOSFET

    Si3433BDV

    Abstract: Si3433BDV-T1-E3 Si3433BDV-T1
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D


    Original     		PDF Si3433BDV Si3433BDV-T1 Si3433BDV-T1--E3 S-40575--Rev. 29-Mar-04 Si3433BDV-T1-E3

    Si3433CDV

    Abstract: Si3433BDV-T1-E3 Si3433BDV si3433
    Text: Specification Comparison Vishay Siliconix Si3433CDV vs. Si3433BDV Description: Package: Pin Out: P-Channel, 20-V D-S MOSFET TSOP-6 Identical Part Number Replacements: Si3433CDV-T1-E3 replaces Si3433BDV-T1-E3 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted


    Original     		PDF Si3433CDV Si3433BDV Si3433CDV-T1-E3 Si3433BDV-T1-E3 28-Aug-08 si3433

    Si3433

    Abstract: No abstract text available
    Text: Si3433 New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.042 @ VGS = - 4.5 V - 5.6 0.057 @ VGS = - 2.5 V - 4.8 0.080 @ VGS = - 1.8 V - 4.1 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D


    Original     		PDF Si3433 18-Jul-08 Si3433

    S0062

    Abstract: No abstract text available
    Text: Si3433DV New Product Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.042 @ VGS = –4.5 V –5.6 0.057 @ VGS = –2.5 V –4.8 0.080 @ VGS = –1.8 V –4.1 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D


    Original     		PDF Si3433DV S-00624--Rev. 03-Apr-00 S0062

    Si3433CDV

    Abstract: 82676
    Text: SPICE Device Model Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		PDF Si3433CDV 18-Jul-08 82676

    74804

    Abstract: AN609 Si3433BDV 348679
    Text: Si3433BDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original     		PDF Si3433BDV AN609 19-Jul-07 74804 348679

    SI3433BDV

    Abstract: No abstract text available
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3433BDV 2002/95/EC Si3433BDV-T1-E3 Si3433BDV-T1-GE3 11-Mar-11

    M 8012

    Abstract: 215175 7227 AN609 Si3433CDV 40123
    Text: Si3433CDV_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		PDF Si3433CDV AN609, 22-Aug-08 M 8012 215175 7227 AN609 40123

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si3433CDV www.vishay.com Vishay Siliconix P-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si3433CDV 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI3433BDV

    Abstract: SI3433B
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D


    Original     		PDF Si3433BDV Si3433BDV-T1 Si3433BDV-T1--E3 S-32416--Rev. 24-Nov-03 SI3433B

    SI3433BDV

    Abstract: No abstract text available
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D


    Original     		PDF Si3433BDV Si3433BDV-T1 Si3433BDV-T1--E3 18-Jul-08

    Si3433BDV

    Abstract: 9nc60
    Text: SPICE Device Model Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3433BDV 18-Mar-03 9nc60

    Si3433BDV

    Abstract: Si3433BDV-T1-E3 Si3433BDV-T1-GE3
    Text: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.6 0.057 at VGS = - 2.5 V - 4.8 0.080 at VGS = - 1.8 V - 4.1 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3433BDV 2002/95/EC Si3433BDV-T1-E3 Si3433BDV-T1-GE3 18-Jul-08

    Si3433BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3433BDV 18-Jul-08

    Si3433CDV

    Abstract: 68803 SI3433CDV-T1-GE3 SI3433CDV-T1
    Text: New Product Si3433CDV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A)a 0.038 at VGS = - 4.5 V -6 0.046 at VGS = - 2.5 V -6 0.060 at VGS = - 1.8 V -6 • Halogen-free According to IEC 61249-2-21 Available


    Original     		PDF Si3433CDV Si3433CDV-T1-E3 Si3433CDV-T1-GE3 18-Jul-08 68803 SI3433CDV-T1

    Si3433BDV

    Abstract: No abstract text available
    Text: SPICE Device Model Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original     		PDF Si3433BDV S-50383Rev. 21-Mar-05