SI3441DV-T1
Abstract: Si3441DV TR55 SI3441BDV-T1-E3 Si3441BDV Si3441BDV-T1
Text: Specification Comparison Vishay Siliconix Si3441BDV vs. Si3441DV Description: P-Channel, 2.5 V G-S MOSFET Package: TSOP-6 Pin Out: Identical Part Number Replacements: Si3441BDV-T1 Replaces Si3441DV-T1 Si3441BDV-T1-E3 (Lead (Pb)-free version) Replaces Si3441DV-T1
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Si3441BDV
Si3441DV
Si3441BDV-T1
Si3441DV-T1
Si3441BDV-T1-E3
06-Nov-06
TR55
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Si3441DV
Abstract: TSOP6
Text: TSOP-6 The Next Step for LITTLE FOOTR Selector Guide Maximum Ratings rDS on (W) Part Number VDS (V) VGS = 10 V VGS = 4.5 V Si3454DV/X 30 0.065 Si3455DV/X 30 0.10 Si3442DV/X 20 0.07 Si3441DV/X 20 0.10 VGS = 2.5 V ID (A) ( ) Configuration Available 0.095 "4.2
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Si3454DV/X
Si3455DV/X
Si3442DV/X
Si3441DV/X
Si3441DV
TSOP6
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Si3441DV
Abstract: 20211
Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY rDS(on) (W) ID (A)b 0.10 @ VGS = - 4.5 V - 3.3 0.135 @ VGS = - 2.5 V - 2.9 VDS (V) - 20 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si3441DV
18-Jul-08
20211
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Si3441DV
Abstract: No abstract text available
Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V –3.3 0.135 @ VGS = –2.5 V –2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si3441DV
S-20212--Rev.
01-Apr-02
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Untitled
Abstract: No abstract text available
Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.10 @ VGS = - 4.5 V - 3.3 0.135 @ VGS = - 2.5 V - 2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si3441DV
08-Apr-05
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Si3441DV
Abstract: 15nc15
Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3441DV
17-Apr-01
15nc15
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Si3441DV
Abstract: 25C84
Text: Si3441DV P-Channel 2.5-V G-S Rated MOSFET Product Summary VDS (V) –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET
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Si3441DV
Si3441DV--2
S-49525--Rev.
06-Oct-97
25C84
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7057
Abstract: 70570 Si3441DV
Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3441DV
S-50383Rev.
21-Mar-05
7057
70570
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Untitled
Abstract: No abstract text available
Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si3441DV
S-56944Rev.
23-Nov-98
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Untitled
Abstract: No abstract text available
Text: Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V.
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Si3441DV
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Si3441DV
Abstract: No abstract text available
Text: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3441DV
Si3441DV--2
S-48796--Rev.
29-Aug-96
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Si3441DV
Abstract: No abstract text available
Text: Si3441DV P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –3.5 A, –20 V.
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Si3441DV
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Si3441DV
Abstract: No abstract text available
Text: SPICE Device Model Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si3441DV
18-Jul-08
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Si3441DV
Abstract: No abstract text available
Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 20 rDS(on) (W) ID (A) 0.10 @ VGS = - 4.5 V - 3.3 0.135 @ VGS = - 2.5 V - 2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si3441DV
18-Jul-08
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Untitled
Abstract: No abstract text available
Text: Si3441DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V –3.3 0.135 @ VGS = –2.5 V –2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
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Si3441DV
S-04188â
25-Jun-01
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tag 625 600
Abstract: Si3441DV
Text: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3441DV
Si3441DV--2
S-48796--Rev.
29-Aug-96
tag 625 600
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Si3441DV
Abstract: No abstract text available
Text: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET
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Si3441DV
Si3441DV--2
S-48796--Rev.
29-Aug-96
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Si3441DV
Abstract: No abstract text available
Text: Si3441DV Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 RDS(ON) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET
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Si3441DV
Si3441DV--2
S-49525--Rev.
06-Oct-97
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D03316P-103
Abstract: 4.7kohm resistor 88638-61102 DRFC16H st lm385 bcr beckman resistor R36-R38 74C32 Framatome 74c32 datasheet
Text: 0700D _BoM Location Part Descripition QTY U21 IC/SM 74LVC04AD SOIC14 3.3V 1 U4,U26 IC/SM 74LVC08 3.3V TSSOP-14 2 U22 IC/SM 74LVC14 3.3V TSSOP-14 1 U7,U8 IC/SM 74LVTH273 TSSOP-20 3.3V 2 U14,U15 IC/SM 74LVC573 SOIC20 No Bus H 2 U3 IC/SM 74C32 TSSOP-14 1 Q3,Q6,Q7
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0700D
74LVC04AD
SOIC14
74LVC08
TSSOP-14
74LVC14
74LVTH273
TSSOP-20
74LVC573
D03316P-103
4.7kohm resistor
88638-61102
DRFC16H
st lm385
bcr beckman resistor
R36-R38
74C32
Framatome
74c32 datasheet
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mosfet cross reference
Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local
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0805-x7r-0,1
Abstract: FDC654P OP12 Si2305DS Si3441DV Si3443DV Si3455DV TWL2203 TWL2203PFB
Text: TWL2203 POWER SUPPLY MANAGEMENT IC SLVS185 – FEBRUARY 2000 D D D D D D Li-Ion Battery Charging Control Over-Voltage Shutdown Seven Low-Dropout Low-Noise Linear Voltage Regulators LDO Voltage Detectors (With Power-Off Delay) Four-Channel Analog Multiplexer
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TWL2203
SLVS185
48-pin
0805-x7r-0,1
FDC654P
OP12
Si2305DS
Si3441DV
Si3443DV
Si3455DV
TWL2203
TWL2203PFB
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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STP7NB40
STT3PF30L
STD20NE03L
STP60NE03L-12
STP60NE03L-10
STP40NF03L
STP80NE03L-06
STS4DPF30L
fqp60n06
spb32N03l
rfp60n06
SSH6N80
FQP50N10
FSD6680
STP55NF06 AND ITS EQUIVALENT
SFP70N03
HGTG*N60A4D
irf630 irf640
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LTDB msop
Abstract: LTC1622 1N4818 d03316-472 ltdb MBRS120LT3 IR10BQ015 LTC1622CMS8 LTC1622CS8 LTC1622IS8
Text: LTC1622 Low Input Voltage Current Mode Step-Down DC/DC Controller U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO High Efficiency Constant Frequency 550kHz Operation VIN Range: 2V to 10V Multiampere Output Currents OPTI-LOOPTM Compensation Minimizes COUT
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LTC1622
550kHz
750kHz
LTC1627/LTC1707
LTC1628
LTC1772
OT-23
OT-23,
550kHz
LTC1735
LTDB msop
LTC1622
1N4818
d03316-472
ltdb
MBRS120LT3
IR10BQ015
LTC1622CMS8
LTC1622CS8
LTC1622IS8
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ltdb
Abstract: No abstract text available
Text: LTC1622 Low Input Voltage Current Mode Step-Down DC/DC Controller FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO High Efficiency Constant Frequency 550kHz Operation VIN Range: 2V to 10V Multiampere Output Currents OPTI-LOOPTM Compensation Minimizes COUT
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LTC1622
550kHz
750kHz
LTC1627/LTC1707
LTC1628
LTC1772
OT-23
OT-23,
550kHz
LTC1735
ltdb
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