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    SI412 Price and Stock

    Vishay Siliconix SI4128DY-T1-E3

    MOSFET N-CH 30V 10.9A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4128DY-T1-E3 Cut Tape 9,347 1
    • 1 $1
    • 10 $0.623
    • 100 $1
    • 1000 $0.28309
    • 10000 $0.28309
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    SI4128DY-T1-E3 Reel 5,000 2,500
    • 1 -
    • 10 -
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    • 10000 $0.25056
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    Vishay Siliconix SI4122DY-T1-GE3

    MOSFET N-CH 40V 27.2A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4122DY-T1-GE3 Cut Tape 5,613 1
    • 1 $3.08
    • 10 $1.998
    • 100 $3.08
    • 1000 $1.03529
    • 10000 $1.03529
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    SI4122DY-T1-GE3 Digi-Reel 5,613 1
    • 1 $3.08
    • 10 $1.998
    • 100 $3.08
    • 1000 $1.03529
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    SI4122DY-T1-GE3 Reel 5,000 2,500
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    • 10000 $0.9485
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    Vishay Siliconix SI4128DY-T1-GE3

    MOSFET N-CH 30V 10.9A 8SO
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    DigiKey SI4128DY-T1-GE3 Cut Tape 4,661 1
    • 1 $1
    • 10 $0.623
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    • 1000 $0.28309
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    SI4128DY-T1-GE3 Digi-Reel 4,661 1
    • 1 $1
    • 10 $0.623
    • 100 $1
    • 1000 $0.28309
    • 10000 $0.28309
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    SI4128DY-T1-GE3 Reel 2,500 2,500
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    • 10000 $0.25056
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    RS SI4128DY-T1-GE3 Bulk 2,500
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    Bristol Electronics SI4128DY-T1-GE3 2,299
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    Quest Components SI4128DY-T1-GE3 1,839
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.3
    • 10000 $0.3
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    Vishay Siliconix SI4126DY-T1-GE3

    MOSFET N-CH 30V 39A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4126DY-T1-GE3 Cut Tape 4,397 1
    • 1 $3.2
    • 10 $2.08
    • 100 $3.2
    • 1000 $1.0832
    • 10000 $1.0832
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    SI4126DY-T1-GE3 Digi-Reel 4,397 1
    • 1 $3.2
    • 10 $2.08
    • 100 $3.2
    • 1000 $1.0832
    • 10000 $1.0832
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    SI4126DY-T1-GE3 Reel 2,500 2,500
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    ES Components SI4126DY-T1-GE3
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    New Advantage Corporation SI4126DY-T1-GE3 2,500 1
    • 1 -
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    • 10000 $1.29
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    Vishay Siliconix SI4124DY-T1-GE3

    MOSFET N-CH 40V 20.5A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4124DY-T1-GE3 Cut Tape 2,507 1
    • 1 $2.81
    • 10 $1.817
    • 100 $2.81
    • 1000 $0.93099
    • 10000 $0.93099
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    SI4124DY-T1-GE3 Digi-Reel 2,507 1
    • 1 $2.81
    • 10 $1.817
    • 100 $2.81
    • 1000 $0.93099
    • 10000 $0.93099
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    SI4124DY-T1-GE3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.8375
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    RS SI4124DY-T1-GE3 Bulk 10
    • 1 -
    • 10 $2.16
    • 100 $2.06
    • 1000 $1.82
    • 10000 $1.82
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    New Advantage Corporation SI4124DY-T1-GE3 2,500 1
    • 1 -
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    • 10000 $0.9031
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    SI412 Datasheets (54)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    Si4122 Silicon Laboratories Synthesizer, Dual Band Frequency Synthesizer With Integrated VCOs For Wireless Communication Original PDF
    Si4122 Silicon Laboratories DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS Original PDF
    Si4122-BM Silicon Laboratories Dual band RF2/IF out synthesizer with integrated VCOs for wireless communications. Original PDF
    SI4122-BT Silicon Laboratories Clock/Timing - Clock Generators, PLLs, Frequency Synthesizers, Integrated Circuits (ICs), IC SYNTHESIZER RF2/IF 24TSSOP Original PDF
    Si4122-BT Silicon Laboratories Dual band RF2/IF out synthesizer with integrated VCOs for wireless communications. Original PDF
    SI4122-D-GM Silicon Laboratories Clock/Timing - Clock Generators, PLLs, Frequency Synthesizers, Integrated Circuits (ICs), IC SYNTH RF2/IF SNGL-BAND 28MLP Original PDF
    SI4122-D-GMR Silicon Laboratories Clock/Timing - Clock Generators, PLLs, Frequency Synthesizers, Integrated Circuits (ICs), IC SYNTH RF2/IF SNGL-BAND 28MLP Original PDF
    SI4122-D-GT Silicon Laboratories Clock/Timing - Clock Generators, PLLs, Frequency Synthesizers, Integrated Circuits (ICs), IC SYNTHESIZER RF2/IF 24TSSOP Original PDF
    SI4122-D-GTR Silicon Laboratories Clock/Timing - Clock Generators, PLLs, Frequency Synthesizers, Integrated Circuits (ICs), IC SYNTHESIZER RF2/IF 24TSSOP Original PDF
    SI4122DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 40V 27.2A 8-SOIC Original PDF
    SI4122-EVB Silicon Laboratories RF Evaluation and Development Kits, Boards, RF/IF and RFID, BOARD EVALUATION FOR SI4122 Original PDF
    Si4122-EVB Silicon Laboratories Frequency Synthesizer, Dual Band RF Frequency Synthesizer With Integrated VCOs For Wireless Communication, Evaluation Board Original PDF
    Si4122G Silicon Laboratories DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS Original PDF
    Si4122G Silicon Laboratories Synthesizer, Dual Band RF Frequency Synthesizer With Integrated VCOs For GSM/GPRS Wireless Communication Original PDF
    SI4122G Silicon Laboratories DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS Original PDF
    Si4122G-BM Silicon Laboratories Synthesizer, Dual Band Frequency Synthesizer With Integrated VCOs For GSM/GPRS Wireless Communication Original PDF
    Si4122G-BM Silicon Laboratories Dual-band RF2/IF synthesizer with integrated VCOs for GSM and GPRS wireless communication. Original PDF
    Si4122G-BT Silicon Laboratories Dual-band RF2/IF synthesizer with integrated VCOs for GSM and GPRS wireless communication. Original PDF
    Si4122G-BT Silicon Laboratories Synthesizer, Dual Band Frequency Synthesizer With Integrated VCOs For GSM/GPRS Wireless Communication Original PDF
    Si4122GM-EVB Silicon Laboratories Single Band GSM RF Synthesizer (RF2/IF) Evaluation Board Original PDF

    SI412 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4133-GT

    Abstract: SI4133-D-GM Si4133-GM si4133-d-gt SI4112-D-GT SI4122DG Si4113 Si4122 Si4123 Si4133
    Text: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators


    Original     		Si4133 Si4123/22/13/12 24-pin 28-lead Si4133-GT SI4133-D-GM Si4133-GM si4133-d-gt SI4112-D-GT SI4122DG Si4113 Si4122 Si4123 Si4133 PDF

    Si4133G-BT

    Abstract: Si4113G Si4122G Si4123G Si4123G-BT Si4133G Si4133G-BM PLL IC 566 Si412 Synthesizers with 3.0 GHz Integer PLL
    Text: Si4133G Si4123G/22G/13G/12G DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR GSM AND GPRS WIRELESS COMMUNICATIONS Ordering Information: See page 28. Applications Pin Assignments GSM 850, E-GSM 900, DCS 1800, and PCS 1900 cellular telephones GPRS data terminals


    Original     		Si4133G Si4123G/22G/13G/12G 24-pin 28-pin Si4133G-BT Si4113G Si4122G Si4123G Si4123G-BT Si4133G-BM PLL IC 566 Si412 Synthesizers with 3.0 GHz Integer PLL PDF

    78a17

    Abstract: Si4128DY-T1-E3 si4128 Si4128DY-T1-GE3 Si4128DY
    Text: New Product Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 10.9 0.030 at VGS = 4.5 V 9.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4128DY Si4128DY-T1-E3 Si4128DY-T1-GE3 11-Mar-11 78a17 si4128 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		Si4122DY Si4122DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4122DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.0045 at VGS = 10 V 27.2 0.006 at VGS = 4.5 V 23.5 VDS (V) 40 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		Si4122DY Si4122DY-T1-GE3 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 10.9 0.030 at VGS = 4.5 V 9.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4128DY Si4128DY-T1-E3 Si4128DY-T1-GE3 25hay 11-Mar-11 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4128BDY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4128BDY 2002/95/EC Si4128BDY-T1-GE3 11-Mar-11 PDF

    Si4126DY

    Abstract: 2936 7406 datasheet 9940 AN609
    Text: Si4126DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When


    Original     		Si4126DY AN609, 11-Apr-08 2936 7406 datasheet 9940 AN609 PDF

    si4124

    Abstract: No abstract text available
    Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)d 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 VDS (V) 40 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4124DY Si4124DY-T1-E3 Si4124DY-T1-GE3 18-Jul-08 si4124 PDF

    AN609

    Abstract: No abstract text available
    Text: Si4124DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When


    Original     		Si4124DY AN609, 24-Apr-08 AN609 PDF

    Si4126DY

    Abstract: No abstract text available
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		Si4126DY Si4126DY-T1-GE3 18-Jul-08 PDF

    si4128

    Abstract: si41
    Text: New Product Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 10.9 0.030 at VGS = 4.5 V 9.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4128DY Si4128DY-T1-E3 Si4128DY-T1-GE3 25trademarks 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 si4128 si41 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		Si4126DY Si4126DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.024 at VGS = 10 V 10.9 0.030 at VGS = 4.5 V 9.7 VDS (V) 30 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original     		Si4128DY Si4128DY-T1-E3 Si4128DY-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS


    Original     		Si4124DY Si4124DY-T1-E3 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		Si4126DY Si4126DY-T1-GE3 11-Mar-11 PDF

    Si4122DY_RC

    Abstract: SI4122DY AN609 121621
    Text: Si4122DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included. When implemented in P-Spice,


    Original     		Si4122DY AN609, 15-May-08 Si4122DY_RC AN609 121621 PDF

    SI4128DY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4128DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range


    Original     		Si4128DY 18-Jul-08 PDF

    Si412

    Abstract: No abstract text available
    Text: Si4133 Si4123/22/13/12 DUAL-BAND RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS FEATURES Dual-band RF synthesizers RF1: 900 MHz to 1.8 GHz RF2: 750 MHz to 1.5 GHz IF synthesizer IF: 62.5 to 1000 MHz Integrated VCOs, loop filters, varactors, and resonators


    Original     		Si4133 Si4123/22/13/12 24-pin 28-lead Si412 PDF

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4128BDY Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () (Max.) ID (A) 0.021 at VGS = 10 V 12a 0.033 at VGS = 4.5 V 6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		Si4128BDY 2002/95/EC Si4128BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Si4126

    Abstract: Si4126-BM Si4136 Si4136-BM Si4136-BT
    Text: Si4136/Si4126 ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS Features Dual-band RF synthesizers Minimal external components required Low phase noise 5 µA standby current 25.7 mA typical supply current 2.7 V to 3.6 V operation Packages: 24-pin TSSOP,


    Original     		Si4136/Si4126 24-pin 28-lead Si4136-BT Si4126 Si4126-BM Si4136 Si4136-BM PDF

    Si4136-F-BM

    Abstract: Si4136-F-GT Si4126-F-GM Si4136-BM Si4136-BT Si4136-F-BT Si4136-F-GM Si4126-F-BM Si4136
    Text: Si4136/Si4126 ISM RF SYNTHESIZER WITH INTEGRATED VCOS FOR WIRELESS COMMUNICATIONS Features Dual-band RF synthesizers Minimal external components required Low phase noise 5 µA standby current 25.7 mA typical supply current 2.7 V to 3.6 V operation Packages: 24-pin TSSOP,


    Original     		Si4136/Si4126 24-pin 28-lead Si4136-BT Si4136-F-BM Si4136-F-GT Si4126-F-GM Si4136-BM Si4136-F-BT Si4136-F-GM Si4126-F-BM Si4136 PDF

    6860-1

    Abstract: SI-4124 16a55
    Text: New Product Si4124DY Vishay Siliconix N-Channel 40-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 40 ID (A)d RDS(on) (Ω) 0.0075 at VGS = 10 V 20.5 0.009 at VGS = 4.5 V 18.7 • TrenchFET Power MOSFET • 100 % Rg Tested Qg (Typ.) RoHS 21 nC APPLICATIONS


    Original     		Si4124DY Si4124DY-T1-E3 08-Apr-05 6860-1 SI-4124 16a55 PDF

    si4126

    Abstract: Si4126DY 265b S8089
    Text: New Product Si4126DY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.00275 at VGS = 10 V 39 0.0034 at VGS = 4.5 V 35 VDS (V) 30 • Halogen-free • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ.)


    Original     		Si4126DY Si4126DY-T1-GE3 11-Mar-11 si4126 265b S8089 PDF