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    Vishay Siliconix SI4196DY-T1-GE3

    MOSFET N-CH 20V 8A 8SO
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    SI4196DY Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4196DY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC Original PDF
    SI4196DY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 20V 8A 8SOIC Original PDF

    SI4196DY Datasheets Context Search

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    AN609

    Abstract: si419
    Text: Si4196DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF Si4196DY AN609, 11-Nov-09 AN609 si419

    2128S

    Abstract: si41
    Text: SPICE Device Model Si4196DY Vishay Siliconix N-Channel 20 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The subcircuit model is extracted and optimized over the - 55 °C


    Original     		PDF Si4196DY 18-Jul-08 2128S si41

    si41

    Abstract: si4196
    Text: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4196DY 2002/95/EC Si4196DY-T1-E3 18-Jul-08 si41 si4196

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4196DY 2002/95/EC Si4196DY-T1-E3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4196DY 2002/95/EC Si4196DY-T1-E3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: New Product Si4196DY Vishay Siliconix N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A)a, e 0.027 at VGS = 4.5 V 8 0.032 at VGS = 2.5 V 8 0.040 at VGS = 1.8 V 8 Qg (Typ.) 8.3 nC • • • • TrenchFET Power MOSFET 100 % Rg Tested


    Original     		PDF Si4196DY 2002/95/EC Si4196DY-T1-E3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12