Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI4800 Search Results

    SF Impression Pixel

    SI4800 Price and Stock

    Vishay Siliconix SI4800BDY-T1-E3

    MOSFET N-CH 30V 6.5A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4800BDY-T1-E3 Cut Tape 6,819 1
    • 1 $1.31
    • 10 $0.822
    • 100 $1.31
    • 1000 $0.3849
    • 10000 $0.3849
    Buy Now
    SI4800BDY-T1-E3 Digi-Reel 6,819 1
    • 1 $1.31
    • 10 $0.822
    • 100 $1.31
    • 1000 $0.3849
    • 10000 $0.3849
    Buy Now
    SI4800BDY-T1-E3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.34313
    Buy Now
    RS SI4800BDY-T1-E3 Bulk 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.75
    Get Quote
    Bristol Electronics SI4800BDY-T1-E3 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components SI4800BDY-T1-E3 2,122
    • 1 $0.45
    • 10 $0.45
    • 100 $0.45
    • 1000 $0.1875
    • 10000 $0.1875
    Buy Now

    Vishay Siliconix SI4800BDY-T1-GE3

    MOSFET N-CH 30V 6.5A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4800BDY-T1-GE3 Cut Tape 5,019 1
    • 1 $1.31
    • 10 $0.822
    • 100 $1.31
    • 1000 $0.3849
    • 10000 $0.3849
    Buy Now
    SI4800BDY-T1-GE3 Digi-Reel 5,019 1
    • 1 $1.31
    • 10 $0.822
    • 100 $1.31
    • 1000 $0.3849
    • 10000 $0.3849
    Buy Now
    SI4800BDY-T1-GE3 Reel 2,500 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.34313
    Buy Now

    NXP Semiconductors SI4800,518

    MOSFET N-CH 30V 9A 8SO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SI4800,518 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Vishay Intertechnologies SI4800BDY-T1-E3

    Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-E3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4800BDY-T1-E3 Reel 7,500 13 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.29625
    Buy Now
    SI4800BDY-T1-E3 Ammo Pack 11 Weeks, 1 Days 1
    • 1 $0.536
    • 10 $0.536
    • 100 $0.536
    • 1000 $0.536
    • 10000 $0.536
    Buy Now
    Mouser Electronics SI4800BDY-T1-E3 6,533
    • 1 $0.85
    • 10 $0.685
    • 100 $0.467
    • 1000 $0.356
    • 10000 $0.304
    Buy Now
    Newark SI4800BDY-T1-E3 Cut Tape 22 1
    • 1 $0.125
    • 10 $0.125
    • 100 $0.125
    • 1000 $0.125
    • 10000 $0.125
    Buy Now
    Bristol Electronics SI4800BDY-T1-E3 13,428
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    SI4800BDY-T1-E3 11,808
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components SI4800BDY-T1-E3 19,545
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.75
    • 10000 $0.225
    Buy Now
    SI4800BDY-T1-E3 10,742
    • 1 $0.75
    • 10 $0.75
    • 100 $0.75
    • 1000 $0.75
    • 10000 $0.225
    Buy Now
    SI4800BDY-T1-E3 2,018
    • 1 $1
    • 10 $1
    • 100 $1
    • 1000 $0.26
    • 10000 $0.26
    Buy Now
    SI4800BDY-T1-E3 238
    • 1 $0.77
    • 10 $0.77
    • 100 $0.385
    • 1000 $0.231
    • 10000 $0.231
    Buy Now
    TTI SI4800BDY-T1-E3 Reel 5,000 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.319
    Buy Now
    TME SI4800BDY-T1-E3 2,529 3
    • 1 -
    • 10 $0.375
    • 100 $0.324
    • 1000 $0.292
    • 10000 $0.272
    Buy Now
    Chip 1 Exchange SI4800BDY-T1-E3 7,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    SI4800BDY-T1-E3 7,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    EBV Elektronik SI4800BDY-T1-E3 14 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    Vishay Intertechnologies SI4800BDY-T1-GE3

    Trans MOSFET N-CH 30V 6.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4800BDY-T1-GE3)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas SI4800BDY-T1-GE3 Reel 13 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.30266
    Buy Now
    Mouser Electronics SI4800BDY-T1-GE3 13,096
    • 1 $1.03
    • 10 $0.699
    • 100 $0.487
    • 1000 $0.361
    • 10000 $0.358
    Buy Now
    Bristol Electronics SI4800BDY-T1-GE3 3,089
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote
    Quest Components SI4800BDY-T1-GE3 2,471
    • 1 $1.093
    • 10 $1.093
    • 100 $1.093
    • 1000 $0.4372
    • 10000 $0.3826
    Buy Now
    SI4800BDY-T1-GE3 50
    • 1 $0.6558
    • 10 $0.5465
    • 100 $0.4372
    • 1000 $0.4372
    • 10000 $0.4372
    Buy Now
    TTI SI4800BDY-T1-GE3 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.319
    Buy Now
    EBV Elektronik SI4800BDY-T1-GE3 14 Weeks 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    SI4800 Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI4800 NXP Semiconductors N-channel TrenchMOS logic level FET Original PDF
    Si4800 Philips Semiconductors N-Channel Enhancement Mode Field-Effect Transistor Original PDF
    SI4800 Philips Semiconductors N-channel enhancement mode field-effect transistor Original PDF
    SI4800,518 Philips Semiconductors FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A SOT96-1 Original PDF
    SI4800BDY Vishay Siliconix MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.5A; Current, Idm pulse:40A; Power, Pd:1.3W; Resistance, Rds on:0.0185R; SMD:1; Charge, gate p Original PDF
    SI4800BDY Vishay Siliconix MOSFETs Original PDF
    Si4800BDY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4800BDY-T1-E3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC Original PDF
    SI4800BDY-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 6.5A 8-SOIC Original PDF
    Si4800DY Vishay Intertechnology N-Channel Reducded Q g , Fast Switching MOSFET Original PDF
    SI4800DY Vishay Telefunken N-Channel 30-V (D-S) MOSFET Original PDF
    Si4800DY SPICE Device Model Vishay N-Channel Reduced Qg, Fast Switching MOSFET Original PDF
    SI4800DY-T1 Vishay Intertechnology N-Channel Reducded Q g , Fast Switching MOSFET Original PDF

    SI4800 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Si4800BDY-T1-E3

    Abstract: Si4800BDY Si4800BDY-T1-GE3
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 11-Mar-11 PDF

    si4800

    Abstract: 03af85 MS-012AA Si4800 philips
    Text: Si4800 N-channel enhancement mode field-effect transistor Rev. 01 — 13 July 2001 M3D315 Product data 1. Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS 1 technology. Product availability: Si4800 in SOT96-1 SO8 .


    Original
    Si4800 M3D315 Si4800 OT96-1 OT96-1, 03af85 MS-012AA Si4800 philips PDF

    Si4800DY

    Abstract: No abstract text available
    Text: Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V "9 0.033 @ VGS = 4.5 V "7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4800DY S-56949--Rev. 01-Feb-99 PDF

    C8816

    Abstract: ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103
    Text: 5 4 3 2 1 AC_BAT_SYS 0925 +5VO 0925 + Q8200 R8209 4.7Ohm D + 1 D1_1 G1 8 2 D1_2 S1/D2_3 7 3 G2 S1/D2_2 6 4 S2 S1/D2_1 5 G D +1.05VO S Q8201 SI4800BDY @ JP8203 1 C8211 0.1UF/50V MLCC/+/-10% R8206 0Ohm C8213 4.7UF/6.3V MLCC/+/-10% 1 2 TPC28T T8209 TPC28T T8216


    Original
    Q8200 R8209 D8202 RB717F R8217 10Ohm C8213 U8200 R8206 C8211 C8816 ricoh r5c833 C2335 IT8510 nvidia nb8 vga board l3404 asus CON61 R5600 D8103 PDF

    Si4800DY

    Abstract: Si4800DY-T1
    Text: Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4800DY


    Original
    Si4800DY Si4800DY-T1 S-31062--Rev. 26-May-03 PDF

    Si4800BDY

    Abstract: No abstract text available
    Text: Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4800BDY S-03295--Rev. 03-Mar-03 PDF

    Si4800BDY

    Abstract: Si4800BDY SPICE Device Model
    Text: SPICE Device Model Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4800BDY S-60147Rev. 13-Feb-06 Si4800BDY SPICE Device Model PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4800DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V "9 0.033 @ VGS = 4.5 V "7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View S S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original
    Si4800DY S-56949--Rev. 01-Feb-99 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V RDS(on) (Ω) 30 ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET


    Original
    Si4800BDY Si4800BDY-T1-E3 Si4800BDY-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    R0402

    Abstract: PC319 PQ301 TPC28T PJP302 PC301 PR307 11VS PC306 PJP303
    Text: 5 4 3 2 25mil PC300 PC301 0.1UF/25V 10UF/25V PC302 10UF/25V /X 1 Shape AC_BAT_SYS PCE300 AC_BAT_SYS Shape AC_BAT_SYS 25mil +5VSUS 15UF/25V PQ300 SI4800BDY PR300 4.7Ohm r0603_h24 TPC28T PT300 /X PR301 0Ohm PD300 Close to PCE301 BAT54AW PC303 PCE301 PC304 0.1UF/25V


    Original
    25mil PC300 1UF/25V PC301 10UF/25V PC302 10UF/25V PCE300 15UF/25V PQ300 R0402 PC319 PQ301 TPC28T PJP302 PR307 11VS PC306 PJP303 PDF

    Si4800DY

    Abstract: Si4800DY-T1
    Text: Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4800DY


    Original
    Si4800DY Si4800DY-T1 18-Jul-08 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 D TrenchFETr Power MOSFET D High-Efficient PWM Optimized rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 RoHS 0.030 @ VGS = 4.5 V 7 Available COMPLIANT SO-8


    Original
    Si4800BDY Si4800BDY-T1 Si4800BDY-T1--E3 S-51168--Rev. 13-Jun-05 PDF

    SI4800BDY-T1-E3

    Abstract: No abstract text available
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D TrenchFETr Power MOSFET D High-Efficient PWM Optimized D 100% UIS Tested SO-8 S S S


    Original
    Si4800BDY Si4800BDY-T1 Si4800BDY-T1--E3 08-Apr-05 SI4800BDY-T1-E3 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4800BDY


    Original
    Si4800BDY Si4800BDY-T1 S-31676â 11-aUG-03 PDF

    Si4800BDY-E3

    Abstract: Si4800BDY-T1 Si4800BDY ti e3 Si4800BDY
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 SO-8 D S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4800BDY Si4800BDY-T1 (with Tape and Reel)


    Original
    Si4800BDY Si4800BDY-T1 Si4800BDY--E3 Si4800BDY-T1--E3 S-41524--Rev. 16-Aug-04 Si4800BDY-E3 Si4800BDY ti e3 PDF

    CA500

    Abstract: Q506 HDS404E LCD13 HDS404-E LCD20 LCD12 DF13-40DP-1 r637 TXOUT09
    Text: 2 3 4 5 6 VCC3 VCC3 7 8 VCC3_HPA U510 SI4800DY SO8 +12V R637 0/NA 0805 VCC5 VCC3_HPA D R515 100K 0603 G R516 100K 0603 R638 0805 S 1 +12V R640 LCD PANEL TRANSLATION BD CONNECTOR 9 FPVCC Q502 NDS9410 SO8 D Q500 A G DTC144WK D S 2N7002 SOT23_FET C507 0.01U/NA


    Original
    SI4800DY 1000P 2N7002 01U/NA DTC144WK NDS9410 TR/3216FF-3A 100PX4 120Z/100M CA500 Q506 HDS404E LCD13 HDS404-E LCD20 LCD12 DF13-40DP-1 r637 TXOUT09 PDF

    SI4800B

    Abstract: Si4800BDY Si4800BDY SPICE Device Model
    Text: SPICE Device Model Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4800BDY 18-Jul-08 SI4800B Si4800BDY SPICE Device Model PDF

    si4800bdy

    Abstract: No abstract text available
    Text: Si4800BDY New Product Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S Ordering Information: Si4800BDY


    Original
    Si4800BDY Si4800BDY-T1 S-31062--Rev. 26-May-03 PDF

    Untitled

    Abstract: No abstract text available
    Text: Si4800DY Vishay Siliconix N-Channel Reducded Qg, Fast Switching MOSFET PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.033 @ VGS = 4.5 V 7 D D D D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G N-Channel MOSFET Top View Ordering Information: Si4800DY


    Original
    Si4800DY Si4800DY-T1 08-Apr-05 PDF

    SI4800BDY-T1-E3

    Abstract: Si4800BDY-T1 Si4800BDY
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (W) ID (A) 0.0185 @ VGS = 10 V 9 0.030 @ VGS = 4.5 V 7 D TrenchFETr Power MOSFET D High-Efficient PWM Optimized D 100% UIS Tested SO-8 S S S


    Original
    Si4800BDY Si4800BDY-T1 Si4800BDY-T1--E3 S-51455--Rev. 01-Aug-05 SI4800BDY-T1-E3 PDF

    Si4800BDY

    Abstract: Si4800BDY-T1 Si4800BDY-T1-E3
    Text: Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET FEATURES PRODUCT SUMMARY VDS V 30 rDS(on) (Ω) ID (A) 0.0185 at VGS = 10 V 9 0.030 at VGS = 4.5 V 7 • TrenchFET Power MOSFET • High-Efficient PWM Optimized • 100 % UIS and Rg Tested


    Original
    Si4800BDY Si4800BDY-T1 Si4800BDY-T1-E3 08-Apr-05 PDF

    Si4800BDY

    Abstract: No abstract text available
    Text: SPICE Device Model Si4800BDY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Model Subcircuit • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    Si4800BDY 0-to-10V 29-Apr-03 PDF

    2314 mosfet

    Abstract: 8434 diode 5817 specifications AN609 Si4800BDY
    Text: Si4800BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    Si4800BDY AN609 16-Jan-06 2314 mosfet 8434 diode 5817 specifications PDF

    TPC28T

    Abstract: MAX1987ETM tpc8107 C2682 CM85621 2SC252 asus 2mm t140 12C519 2mm t120
    Text: 5 4 3 2 1 AC_BAT_SYS 1 2 1 C404 15UF/25V D 5 6 7 8 Q69 SI4800BDY GND T215 TPC28t 4 3 2 1 3 2 +1.8VAUXO 1 2 3 4 T131 TPC28t T17 T27 T133 1 1 C401 0.1UF/25V D34 RB717F 2 G S +5VA S C405 0.1UF/25V G GND + D D Q70 SI4800BDY 1 8 7 6 5 D 2 2 + CE12 220uF/25V 1 2


    Original
    15UF/25V 220uF/25V TPC28t 15UF/25V 1UF/25V SI4800BDY RB717F MAX1987ETM tpc8107 C2682 CM85621 2SC252 asus 2mm t140 12C519 2mm t120 PDF