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    SI7101DN Price and Stock

    Vishay Siliconix SI7101DN-T1-GE3

    MOSFET P-CH 30V 35A PPAK 1212-8
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    DigiKey SI7101DN-T1-GE3 Digi-Reel 9,207 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
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    SI7101DN-T1-GE3 Cut Tape 9,207 1
    • 1 $1.79
    • 10 $1.137
    • 100 $1.79
    • 1000 $0.55158
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    SI7101DN-T1-GE3 Reel 9,000 3,000
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    New Advantage Corporation SI7101DN-T1-GE3 3,000 1
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    Vishay Intertechnologies SI7101DN-T1-GE3

    P-CHANNEL 30-V (D-S) MOSFET - Product that comes on tape, but is not reeled (Alt: 26AK9926)
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    Avnet Americas SI7101DN-T1-GE3 Ammo Pack 17 Weeks, 4 Days 1
    • 1 $1.2
    • 10 $0.981
    • 100 $0.764
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    SI7101DN-T1-GE3 Ammo Pack 18 Weeks, 3 Days 1
    • 1 $1.29
    • 10 $1.07
    • 100 $0.851
    • 1000 $0.851
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    SI7101DN-T1-GE3 Reel 17 Weeks 3,000
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    Mouser Electronics SI7101DN-T1-GE3 142,723
    • 1 $1.2
    • 10 $0.966
    • 100 $0.678
    • 1000 $0.506
    • 10000 $0.45
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    Verical SI7101DN-T1-GE3 3,000 3,000
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    SI7101DN-T1-GE3 2,782 125
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    SI7101DN-T1-GE3 441 323
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    Arrow Electronics SI7101DN-T1-GE3 3,000 17 Weeks 3,000
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    Newark SI7101DN-T1-GE3 Cut Tape 2,782 1
    • 1 $0.4
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    SI7101DN-T1-GE3 Cut Tape 441 1
    • 1 $0.155
    • 10 $0.155
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    SI7101DN-T1-GE3 Reel 1
    • 1 $0.648
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    • 100 $0.648
    • 1000 $0.623
    • 10000 $0.479
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    TTI SI7101DN-T1-GE3 Reel 12,000 3,000
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    TME SI7101DN-T1-GE3 1
    • 1 $1.062
    • 10 $0.914
    • 100 $0.744
    • 1000 $0.584
    • 10000 $0.563
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    Avnet Asia SI7101DN-T1-GE3 19 Weeks 3,000
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    EBV Elektronik SI7101DN-T1-GE3 18 Weeks 3,000
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    SI7101DN Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI7101DN-T1-GE3 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 30V 35A PPAK 1212-8 Original PDF

    SI7101DN Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: New Product Si7101DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0072 at VGS = - 10 V - 35d 0.0130 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		PDF Si7101DN Si7101DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: New Product Si7101DN Vishay Siliconix P-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) () Max. ID (A) 0.0072 at VGS = - 10 V - 35d 0.0130 at VGS = - 4.5 V - 35d • TrenchFET Power MOSFET • 100% Rg and UIS Tested • Material categorization:


    Original     		PDF Si7101DN Si7101DN-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si7101DN www.vishay.com Vishay Siliconix P-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the p-channel vertical DMOS. The subcircuit model is extracted and optimized over the -55 °C


    Original     		PDF Si7101DN 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12