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    SI8424CDB Price and Stock

    Vishay Intertechnologies SI8424CDB-T1-E1

    N-CHANNEL 8-V (D-S) MOSFET - Tape and Reel (Alt: SI8424CDB-T1-E1)
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    Avnet Americas SI8424CDB-T1-E1 Reel 20 Weeks 3,000
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    SI8424CDB-T1-E1 Reel 20 Weeks 3,000
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    Mouser Electronics SI8424CDB-T1-E1 16,981
    • 1 $0.4
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    Newark SI8424CDB-T1-E1 Cut Tape 19,879 5
    • 1 $0.593
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    SI8424CDB-T1-E1 Reel 3,000
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    SI8424CDB-T1-E1 Reel 3,000
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    TTI SI8424CDB-T1-E1 Reel 6,000 3,000
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    TME SI8424CDB-T1-E1 1
    • 1 $0.613
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    Chip1Stop SI8424CDB-T1-E1 3,000
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    SI8424CDB-T1-E1 3,000
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    EBV Elektronik SI8424CDB-T1-E1 21 Weeks 3,000
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    SI8424CDB Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SI8424CDB-T1-E1 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 8V MICROFOOT Original PDF

    SI8424CDB Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB www.vishay.com Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () MAX. ID (A) a, e 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 VDS (V) 8


    Original     		PDF Si8424CDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF Si8424CDB AN609, 1164m 2215m 1109m 5687m 7434m 7950m 28-Sep-12

    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 ID (A)a, e RDS(on) () Max. 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 Qg (Typ.) 25 nC


    Original     		PDF Si8424CDB 8424C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si8424CDB Vishay Siliconix N-Channel 8 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 8 ID (A)a, e RDS(on) () Max. 0.020 at VGS = 4.5 V 10 0.021 at VGS = 2.5 V 9.7 0.023 at VGS = 1.8 V 9.3 0.028 at VGS = 1.5 V 8.4 0.045 at VGS = 1.2 V 5 Qg (Typ.) 25 nC


    Original     		PDF Si8424CDB 8424C 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SPICE Device Model Si8424CDB www.vishay.com Vishay Siliconix N-Channel 30 V D-S MOSFET DESCRIPTION CHARACTERISTICS The attached SPICE model describes the typical electrical characteristics of the n-channel vertical DMOS. The sub-circuit model is extracted and optimized over the -55 °C


    Original     		PDF Si8424CDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    SI-8100D

    Abstract: Si8409DB Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - World’s Smallest Chipscale MOSFETs AND TEC I INNOVAT O L OGY MICRO FOOT N HN POWER MOSFETs O 19 62-2012 World’s Smallest Chipscale MOSFETs KEY BENEFITS • Smallest MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm,


    Original     		PDF Si8407DB Si8439DB Si8415DB Si8425DB Si8473EDB Si8413DB Si8487DB Si8409DB Si8483DB Si8499DB SI-8100D Si8461 si8466 SI8425 si8812 si8802 SI8466EDB si8489 Si8100DB

    SI1489EDH

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - On-Resistance Ratings at VGS = 1.2 V 1.2 V Rated MOSFETs Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS • Optimized for use with the low-voltage core ICs in portable electronics systems


    Original     		PDF SiA920DJ SC-70 SiB914DK SC-75 Si1011X Si8805EDB com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1402 SI1489EDH

    SiB914

    Abstract: SiA427DJ si2329ds si8802
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - On-Resistance Ratings at VGS = 1.2 V AND TEC I INNOVAT O L OGY 1.2 V Rated MOSFETs N HN POWER MOSFETs O 19 62-2012 Industry’s First Load Switches Designed for On-Resistance Ratings at 1.2 V KEY BENEFITS


    Original     		PDF SC-70 SC-75 com/mosfets/12-rated-on-res/ com/mosfets/15-rated-on-res/ VMN-PT0103-1209 SiB914 SiA427DJ si2329ds si8802

    Untitled

    Abstract: No abstract text available
    Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . POWER MOSFETs MOSFETs - Extremely Small Chipscale MOSFETs MICRO FOOT Extremely Small Chipscale MOSFETs KEY BENEFITS • Small MOSFET footprints of 0.8 mm x 0.8 mm, 1 mm x 1 mm, 1.2 mm x 1 mm, 1.5 mm x 1 mm, and 2.4 mm x 2 mm


    Original     		PDF Si8489EDB Si8902AEDB VMN-PT0107-1402