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    SIHA25N50E Price and Stock

    Vishay Siliconix SIHA25N50E-GE3

    N-CHANNEL 500V
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    DigiKey SIHA25N50E-GE3 Cut Tape 996 1
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    SIHA25N50E-GE3 Reel 1,000
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    Vishay Siliconix SIHA25N50E-E3

    MOSFET N-CH 500V 26A TO220
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    DigiKey SIHA25N50E-E3 Tube 800 1
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    Vishay Intertechnologies SIHA25N50E-GE3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHA25N50E-GE3)
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    Avnet Americas SIHA25N50E-GE3 Reel 18 Weeks 1,000
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    Mouser Electronics SIHA25N50E-GE3
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    Newark SIHA25N50E-GE3 Bulk 1,003 1
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    TTI SIHA25N50E-GE3 Reel 1,000
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    TME SIHA25N50E-GE3 1
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    Vishay Intertechnologies SIHA25N50E-E3

    N-CHANNEL 500V - Tape and Reel (Alt: SIHA25N50E-E3)
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    Avnet Americas SIHA25N50E-E3 Reel 18 Weeks 1,000
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    Mouser Electronics SIHA25N50E-E3 387
    • 1 $4.14
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    TTI SIHA25N50E-E3 Tube 1,000
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    EBV Elektronik SIHA25N50E-E3 19 Weeks 50
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    SIHA25N50E Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SIHA25N50E-E3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 500V 26A TO-220FP Original PDF

    SIHA25N50E Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: SiHA25N50E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY VDS V at TJ max. • Low figure-of-merit (FOM): Ron x Qg 550 RDS(on) max. at 25 °C (Ω) VGS = 10 V • Low input capacitance (Ciss) 0.145 Qg (Max.) (nC) 86 • Reduced switching and conduction losses


    Original     		SiHA25N50E O-220 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    Untitled

    Abstract: No abstract text available
    Text: Product Group: Vishay Siliconix, High-Voltage MOSFETs / September 2014 Author: Philip Zuk Tel: +1 408 970-5298 E-mail: philip.zuk@vishay.com SiHx25N50E 500 V E Series N-Channel Power MOSFETs Product Benefits: •      Continued high performance low switching and


    Original     		SiHx25N50E O-220 SiHP25N50E O247AC SiHG25N50E SiHA25N50E PDF

    Device Application Note AN849

    Abstract: AN849 planar mosfet
    Text: VISHAY SILICONIX www.vishay.com MOSFETs Device Application Note AN849 Power MOSFET Basics Understanding Superjunction Technology by Sanjay Havanur and Philip Zuk Power MOSFETs based on superjunction technology have become the industry norm in high-voltage switching


    Original     		AN849 Device Application Note AN849 AN849 planar mosfet PDF