IRFIB7N50L
Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Text: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration
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Original
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PDF
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IRFIB7N50L,
SiHFIB7N50L
O-220
18-Jul-08
IRFIB7N50L
SiHFIB7N50L-E3
ktp12
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IRFIB7N50L
Abstract: SiHFIB7N50L SiHFIB7N50L-E3 ktp12
Text: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration
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Original
|
PDF
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IRFIB7N50L,
SiHFIB7N50L
O-220
18-Jul-08
IRFIB7N50L
SiHFIB7N50L-E3
ktp12
|
Untitled
Abstract: No abstract text available
Text: IRFIB7N50L, SiHFIB7N50L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Super Fast Body Diode Eliminates the Need for External Diodes in ZVS Applications 500 RDS(on) (Ω) VGS = 10 V 0.320 Qg (Max.) (nC) 92 Qgs (nC) 24 Qgd (nC) 44 Configuration
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Original
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PDF
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IRFIB7N50L,
SiHFIB7N50L
O-220
12-Mar-07
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