Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SIS496EDNT Search Results

    SF Impression Pixel

    SIS496EDNT Price and Stock

    Vishay Siliconix SIS496EDNT-T1-GE3

    MOSFET N-CH 30V 50A PPAK1212-8
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIS496EDNT-T1-GE3 Reel
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Vishay Intertechnologies SIS496EDNT-T1-GE3

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SIS496EDNT-T1-GE3 5,899
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote
    Quest Components SIS496EDNT-T1-GE3 4,719
    • 1 $0.424
    • 10 $0.424
    • 100 $0.424
    • 1000 $0.1272
    • 10000 $0.0848
    		Buy Now
    Chip1Stop SIS496EDNT-T1-GE3 198
    • 1 -
    • 10 -
    • 100 $0.0672
    • 1000 $0.0672
    • 10000 $0.0672
    		Buy Now

    SIS496EDNT Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    SIS496EDNT-T1-GE3 Vishay Siliconix Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 50A POWERPAK1212 Original PDF

    SIS496EDNT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V


    Original     		PDF SiS496EDNT SiS496EDNT-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS496EDNT Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) () Max. ID (A)a 0.0048 at VGS = 10 V 50 0.0062 at VGS = 4.5 V 50 VDS (V) 30 TrenchFET Power MOSFET 100 % Rg and UIS tested Thin 0.75 mm height Typical ESD performance 2500 V


    Original     		PDF SiS496EDNT SiS496EDNT-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SiS496EDNT-GE3_RC www.vishay.com Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter


    Original     		PDF SiS496EDNT-GE3 AN609, 8275m 3444u 7413m 2543m 8535m 1282m 6387m 18-Jun-13