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Vishay Siliconix SIZ914DT-T1-GE3 MOSFET 2N-CH 30V 16A 8POWERPAIR
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DigiKey	SIZ914DT-T1-GE3	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Vishay Intertechnologies SIZ914DT-T1-GE3
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Bristol Electronics	SIZ914DT-T1-GE3		2,811			1 - 10 - 100 - 1000 - 10000 -	Get Quote

SIZ914DT Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
SIZ914DT-T1-GE3		Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 30V 16A PWRPAIR		Original	PDF

SIZ914DT Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: SiZ914DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.00640 at VGS = 10 V 16a 0.01000 at VGS = 4.5 V 16a 0.00137 at VGS = 10 V 40a 0.00194 at VGS = 4.5 V 40a Qg (Typ.)	Original	PDF	SiZ914DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: SiZ914DT Vishay Siliconix Dual N-Channel 30 V D-S MOSFETs FEATURES PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 30 RDS(on) () (Max.) ID (A)g 0.00640 at VGS = 10 V 16a 0.01000 at VGS = 4.5 V 16a 0.00137 at VGS = 10 V 40a 0.00194 at VGS = 4.5 V 40a Qg (Typ.)	Original	PDF	SiZ914DT 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - Save Space, Increase Performance SkyFET Integrated MOSFET and Schottky Diode Solution Key Benefits • • • • Increases efficiency for DC/DC converter applications Reduces space and solution cost by eliminating external Schottky diodes	Original	PDF	SiS778DN SiS782DN SiS780DN SiZ914DT VMN-PT0104-1302
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . POWER MOSFETs MOSFETs – Ultra-Low RDS on with Next Generation Technology TrenchFET Gen IV New Breakthrough Technology Lowers On-Resistance Down to Just 0.00135 Ω at VGS = 4.5 V Key Benefits • Next-generation technology optimizes several key specifications:	Original	PDF	SiZ916DT SiZ340DT SiZ914DT VMN-PT0306-1402
si4776 Abstract: No abstract text available Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - Save Space, Increase Performance AND TEC I INNOVAT O L OGY SkyFET N HN POWER MOSFETs O 19 62-2012 Integrated MOSFET and Schottky Diode Solution KEY BENEFITS • • • • Increases efficiency for DC/DC converter applications	Original	PDF	SiR788DP Si7774DP Si7748DP Si7772DP Si4628DY Si4752DY Si4774DY Si4712DY Si4714DY Si4776DY si4776
Untitled Abstract: No abstract text available Text: Vishay Intertechnology, Inc. P owerPAIR MOSFET s PowerPAIR 3 x 3 Provides Best Efficiency in the Industry in Compatible 3 x 3 Footprints PowerPAIR 6 x 3.7 26 % Smaller with Comparable Performance to a 6 x 5 mm2 Device PowerPAIR 6 x 5 Achieves High Efficiency in	Original	PDF	SiZ340DT SiZ342DT VMN-MS6927-1406
sir158 Abstract: q113 SiZ340DT SiR158DP N3X3 Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . MOSFETs - High- and Low-Side MOSFETs in One Compact Package AND TEC I INNOVAT O L OGY PowerPAIR N HN POWER MOSFETs O 19 62-2012 Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes KEY BENEFITS	Original	PDF	SiZ790DT SiZ914DT VMN-PT0182-1209 sir158 q113 SiZ340DT SiR158DP N3X3
Untitled Abstract: No abstract text available Text: V i s h ay I n t e r t e c h n o l o g y, I n c . Power MOSFETs MOSFETs - High- and Low-Side MOSFETs in One Compact Package PowerPAIR Co-Packaged MOSFETs Reduce Space, Increase Performance Over Two Discretes Key Benefits APPLICATIONS • High- and low-side MOSFETs in one	Original	PDF	SiZ790DT SiZ914DT VMN-PT0182-1402