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    MJ 5030

    Abstract: westcode igbt
    Text: Date:- 18 Jun, 2003 Data Sheet Issue:- 2 Provisional Data    Insulated Gate Bi-Polar Transistor Type T0250NA52E Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.


    Original     		PDF T0250NA52E MJ 5030 westcode igbt

    IGBT presspack

    Abstract: IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E
    Text: High Voltage IGBT Gate Driver – C0030BG400 Westcode Semiconductors Limited introduce a high voltage IGBT gate drive unit GDU designed to complement our range of high voltage Press-Pack IGBTs and standard IGBT modules. The device, known as C0030BG400, is a single


    Original     		PDF C0030BG400 C0030BG400, 100kV/ IGBT presspack IGBT 3kv high voltage 5kv igbt press-pack igbt IGBT 5kV C0030BG400 igbt 1500A C0030BG400SAC 100KV T0900TA52E