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    GT20D101

    Abstract: No abstract text available
    Text: 45E D m T0T755G 0017äMfl TOSM T TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR GT20D101 SILICON N CHANNEL TYPE TOSHIBA D I S C R E T E / O P T O H IG H P O W E R A M P L I F I E R A P P L I C A T I O N Unit in mm 0 3 3 ± 0 .2 . High Breakdown Voltage v CES=25° v


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    PDF 10T755G GT20D101 GT20D201 T-39-31 --GT20D101