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    T14L10 Search Results

    T14L10 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    T14L10 Vishay Siliconix Resistor networks Original PDF
    T14L10104E3 Vishay Siliconix Dual-In-Line, 10 Bit Original PDF
    T14L1024A Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10D Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10H Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10J Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10N Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-10P Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024A-12J Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10C Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10H Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10J Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10P Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF
    T14L1024N-10W Taiwan Memory Technology 128K x 8 HIGH SPEED CMOS STATIC RAM Original PDF

    T14L10 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    T14L1024N

    Abstract: T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W
    Text: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION • Fast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 words by 8 bits. It is designed for


    Original     		PDF T14L1024N 10/12/15ns T14L1024N 110/105/100mA 32thout 36-Ball 8x10mm) T14L1024N-10C T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W

    BI resistor network

    Abstract: 5K10 T14L10 DSA003808
    Text: T14L10 Vishay Techno Thick Film Resistor Networks, Dual-In-Line, 10 Bit APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches. ELECTRICAL SPECIFICATIONS Ladder network accuracy: ± 1 LSB from 0 °C to + 70 °C Ladder network resistance tolerance: ± 2 %


    Original     		PDF T14L10 18-Jul-08 BI resistor network 5K10 T14L10 DSA003808

    T14L1024A

    Abstract: T14L1024A-10D T14L1024A-10H T14L1024A-10J T14L1024A-10N T14L1024A-10P
    Text: tm TE CH Preliminary T14L1024A SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 • Fast Address Access Times : 10/12/15ns • Single 3.3V ±0.3V power supply


    Original     		PDF T14L1024A T14L1024A 10/12/15ns 110/105/100mA 32-pin times063 T14L1024A-10D T14L1024A-10H T14L1024A-10J T14L1024A-10N T14L1024A-10P

    16 bit r 2r

    Abstract: No abstract text available
    Text: Model T14L10 Vishay Techno Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0 °C to + 70 °C. Ladder Network Resistance Tolerance: ± 2 %.


    Original     		PDF T14L10 T14L10 01-Aug-05 16 bit r 2r

    Untitled

    Abstract: No abstract text available
    Text: T14L10 Vishay Techno Thick Film Resistor Networks, Dual-In-Line, 10 Bit APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches. ELECTRICAL SPECIFICATIONS Ladder network accuracy: ± 1 LSB from 0 °C to + 70 °C Ladder network resistance tolerance: ± 2 %


    Original     		PDF T14L10 08-Apr-05

    745-030

    Abstract: T14L10
    Text: Model T14L10 Vishay Techno Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0°C to + 70°C. Ladder Network Resistance Tolerance: ± 2%.


    Original     		PDF T14L10 100PPM/ 21-Dec-99 745-030 T14L10

    T14L1024N

    Abstract: T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W
    Text: tm TE CH T14L1024N SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION ¡EFast Address Access Times : 10/12/15ns The T14L1024N is a one-megabit density, fast static random access memory organized as 131,072 ¡ESingle 3.3V ±0.3V power supply


    Original     		PDF T14L1024N 10/12/15ns T14L1024N 110/105/100mA 32-LEAD 8x20mm) T14L1024N-10H T14L1024N-10J T14L1024N-10P T14L1024N-10W

    Untitled

    Abstract: No abstract text available
    Text: Models T14L10 Vishay Techno Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0°C to + 70°C. Ladder Network Resistance Tolerance: ± 2%.


    Original     		PDF T14L10 100PPM/ T14L10 23-Sep-99

    T14L10

    Abstract: No abstract text available
    Text: Model T14L10 Vishay Techno Dual-In-Line, 10 Bit R/2R Ladder Networks APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0 °C to + 70 °C. Ladder Network Resistance Tolerance: ± 2 %.


    Original     		PDF T14L10 08-Apr-05 T14L10

    T14L1024A

    Abstract: T14L1024A-10J T14L1024A-10P
    Text: tm TE CH Preliminary T14L1024A SRAM 128K X 8 HIGH SPEED CMOS STATIC RAM FEATURES GENERAL DESCRIPTION ¡EFast Address Access Times : 10/12/15ns The T14L1024A is a one-megabit density, fast static random access memory organized as 131,072 ¡ESingle 3.3V ±0.3V power supply


    Original     		PDF T14L1024A 10/12/15ns T14L1024A 110/105/100mA 32-pin203 32-LEAD 8x20mm) T14L1024A-10J T14L1024A-10P

    CS16LV40963

    Abstract: BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D
    Text: www.ashlea.co.uk 01793 783784 Low power SRAM Cross Reference Density Configuration 64K 8Kx8 256K 32Kx8 Lyontek LY6264 LY62L64 LY62256 LY62L256 LY62256 2.7-5.5 1M 128Kx8 64Kx16 LY621024 LY62L1024 LY62L6416 Samsung K6X0808C1D K6X0808T1D K6X1008C2D K6X1008T2D


    Original     		PDF 32Kx8 LY6264 LY62L64 LY62256 LY62L256 LY62256 128Kx8 64Kx16 LY621024 LY62L1024 CS16LV40963 BS62LV4006 sram cross reference CS18LV40963 LY6264 Hynix Cross Reference cs18lv10245 cs18lv02560 LY621024 K6X1008C2D

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno 厚膜电阻器网络， 双排，模塑 DIP 特点 • 10 位 , R/2R 梯形网络，用于 D/A 和 A/D 双极转换 器或 CMOS 开关 • 0.190" 4.83 mm 最大座高 • 坚固耐用 , 模塑壳体结构 • 厚膜电阻元件 • 低温度系数 (- 55 ℃至 125 ℃ ) ± 100 ppm/ ℃


    Original     		PDF 2002/95/EC 2011/65/EU 2002/95/ECã 2011/65/EUã JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • 10 bit, R/2R ladder networks for D/A and A/D converter with bi-polar or CMOS switches • 0.190" 4.83 mm maximum seated height • Rugged, molded case construction • Thick film resistive elements


    Original     		PDF 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • 10 bit, R/2R ladder networks for D/A and A/D converter with bi-polar or CMOS switches • 0.190" 4.83 mm maximum seated height • Rugged, molded case construction • Thick film resistive elements


    Original     		PDF 2002/95/EC 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • 10 bit, R/2R ladder networks for D/A and A/D converter with bi-polar or CMOS switches • 0.190" 4.83 mm maximum seated height • Rugged, molded case construction • Thick film resistive elements


    Original     		PDF 2002/95/EC 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: T14L Vishay Techno Thick Film Resistor Networks, Dual-In-Line, Molded DIP FEATURES • 10 bit, R/2R ladder networks for D/A and A/D converter with bi-polar or CMOS switches • 0.190" 4.83 mm maximum seated height • Rugged, molded case construction • Thick film resistive elements


    Original     		PDF 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: MODEL T14L10 R/2R Ladder Networks D IP , 10 B it A P P L IC A T IO N S 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELE C T R IC A L S P E C IF IC A T IO N S Ladder Network Accuracy: ± 1 LSB from 0 C to + 70 C. Ladder Network Resistance Tolerance: ± 2%.


    OCR Scan     		PDF T14L10 100PPM/Â R19/R18 104S2 10Oki 200kS2.

    Untitled

    Abstract: No abstract text available
    Text: MODEL T14L10 TECHNO R/2R Ladder Networks DIP, 10 Bit ▼ APPLICATIONS 4 li% i 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0°C to + 70°C. Ladder Network Resistance Tolerance: ± 2%.


    OCR Scan     		PDF T14L10 100PPM/Â R9/R103/R14 R15/R16 R19/R17 R19/R18 10OkQ. 200kQ.

    Untitled

    Abstract: No abstract text available
    Text: A COMPANY MODEL T14L10 R/2R Ladder Networks OF TECHNO DIP, 10 Bit APPLICATIONS 10 Bit, R/2R Ladder networks for D/A and A/D converter with bi-polar or CMOS switches ELECTRICAL SPECIFICATIONS Ladder Network Accuracy: ± 1 LSB from 0°C to + 70°C. Ladder Network Resistance Tolerance: ± 2%.


    OCR Scan     		PDF T14L10 100PPM/Â 211/R12 R13/R14 R15/R16 R19/R17 R19/R18 100kQ.

    M8340101

    Abstract: M8340102 capacito
    Text: VISHAY ▼ Table of Contents Vishay Techno C o n te n ts . 1 Alphabetical In d e x .2


    OCR Scan     		PDF M83401/04, M8340101 M8340102; 19-Mar-01 M8340102 capacito

    XO-43B

    Abstract: No abstract text available
    Text: SURFACE MOUNT INDEX Oscillators and Crystals XT39P, XT 39P -1, surface mount crystal, m oulded.6-7 XT49M , surface mount crystal, low profile.9 XO SM -52B, BE, surface mount, hybrid crystal.12


    OCR Scan     		PDF XT39P, XT49M ST-22, SL-1206, XT-38-T, XT-49M, XT-49S, XT-49U, XO-43B

    hy 214 A Display

    Abstract: MIL-R-26 apd 128*128 APD-256M026-1 APD-256M026 APD-480M021-1 irf 346
    Text: A COMPANY OF. A lphabetical Index P roducts Only 7, 8, surface mount, hybrid chip th e rm istors.190 10, 20, 30, 40, 50, 60, NTC therm istors.202 300, printed circuit board connectors.293 IB , uncoated disc thermistors, material "B ". 192


    OCR Scan     		PDF ABG-12205, APD-016M040, APD-064M033, APD-080M025-1, APD-128G128, XO-43B, XO-52B, XO-53B, XO-54B, XOSM-52B, hy 214 A Display MIL-R-26 apd 128*128 APD-256M026-1 APD-256M026 APD-480M021-1 irf 346

    Untitled

    Abstract: No abstract text available
    Text: GENERAL INDEX General Index. 2-3 Surface Mount Index. 4


    OCR Scan     		PDF XT39P, XT39P-1, XT38T, XT49M,

    DALE RESISTOR NETWORKS

    Abstract: Mil-T-23648 m8340102 APD-256M026-1 APD-222G007 CRCW DALE APD-256M026 APD-480M021-1
    Text: A C O M PA N Ÿ OF G eneral Index/S urface Mount Index T hick Film Resistor N etw orks, Resistor/Capacitor Netw orks, C apacitor N etw o rks, Ladder N etw orks and Custom Phone: 402 371 -0080 Dale Phone: (818) 781-1642 Dale, Techno Division M83401/04, 05,06, 07, 08, 09, resistor


    OCR Scan     		PDF M83401/04, MIL-R-83401, M8340101, M8340102, MDM14, MDM16, DFM14, DALE RESISTOR NETWORKS Mil-T-23648 m8340102 APD-256M026-1 APD-222G007 CRCW DALE APD-256M026 APD-480M021-1