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Vishay Semiconductors T163VU-SF-F PHOTO SENSOR
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DigiKey	T163VU-SF-F	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now

T163VU Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
T163VU-SF-F		Vishay Semiconductors	PHOTO SENSOR		Original	PDF

T163VU Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability	Original	PDF	T163VU T163VU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
T163VU Abstract: FVOV6870 MIL-HDBK-263 81133 Text: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	PDF	T163VU 2002/95/EC 2002/96/EC T163VU 18-Jul-08 FVOV6870 MIL-HDBK-263 81133
Untitled Abstract: No abstract text available Text: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	PDF	T163VU 2002/95/EC 2002/96/EC T163VU 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12
Untitled Abstract: No abstract text available Text: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	PDF	T163VU 2002/95/EC 2002/96/EC T163VU 11-Mar-11
Untitled Abstract: No abstract text available Text: T163VU www.vishay.com Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability	Original	PDF	T163VU T163VU 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12
chip diode "sawn on foil" Abstract: FVOV6870 MIL-HDBK-263 Text: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	PDF	T163VU 2002/95/EC 2002/96/EC T163VU 18-Jul-08 chip diode "sawn on foil" FVOV6870 MIL-HDBK-263
Untitled Abstract: No abstract text available Text: T163VU Vishay Semiconductors Infrared Emitting Diode Chip, 950 nm, GaAs FEATURES • Package type: chip • Package form: single chip • Dimensions L x W x H in mm : 0.37 x 0.37 x 0.265 • Peak wavelength: λp = 950 nm • High reliability • Low forward voltage	Original	PDF	T163VU 2002/95/EC 2002/96/EC T163VU 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12