PXB 4310
Abstract: PXB 4325 436AH T432
Text: ICs for Communications ATM Switching Preprocessor ASP PXB 4325 Version 1.1 CONFIDENTIAL Product Overview 2.97 T4325-XV11-O1-7600 PXB 4325 Revision History: Current Version: 2.97 Previous Version: Page in Version Page (in new Version) Subjects (changes since last revision)
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T4325-XV11-O1-7600
PXB 4310
PXB 4325
436AH
T432
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21c14
Abstract: IHI Rotary Encoder MT4325AE circuit diagram of keypad interface with dtmf matrix encoded keypad DTMF Receiver DIP-18 telephone KEYPAD MT4325AC MT8865 keypad network
Text: _ _ _ _ _ _ • V H TEL. IS O -C M O S M T4325 Programmable Keypad Pulse Dialer Fe a tu re s • Last number redial • Multiple access pause programming • Any valid Keypad input or HOLD IN causes exit from access pause • Oscillator start up controlled from keypad input
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MT4325
300Hz
932Hz
MT4325,
21c14
IHI Rotary Encoder
MT4325AE
circuit diagram of keypad interface with dtmf
matrix encoded keypad
DTMF Receiver DIP-18
telephone KEYPAD
MT4325AC
MT8865
keypad network
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Untitled
Abstract: No abstract text available
Text: HA RR IS SEflICOND S E CT OR im J MGE D 4302271 0032314 1 !HAS HARRIS High-Frequency N -P-N Transistor Array August 1991 Features Description • Galn-Bandwtdth Product f x . >1GHz • Power Gain .30dB (Typ) at 100MHz
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CA3127*
CA3127
500MHz.
CA3127
16-lead
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FT5754M
Abstract: FT5754 FT5754M Pin FT5757M FT5757 T-43-25 FT57 B-500 diode
Text: FUJITSU MICROELECTRONICS 31E D 374*i7b2 GOlbbbM 3 E l F ill January 1990 Edition 1.1 FTS7S4M, FT5757M FUJITSU PRODUCT PRO FILE- Silicon Darlington Transistor Array ABSOLUTE M A XIM U M RATINGS Rating Ta = 25°C Symbol Condition Value Unit -5 5 ~ +150 °C
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FT5754M,
FT5757M
10-Pi
T-43-25
Ta-25
Ta-25Â
FT5754M
FT5754
FT5754M Pin
FT5757M
FT5757
T-43-25
FT57
B-500 diode
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EN2016ACN
Abstract: tmax t7 Tmax T7 S 800 transistor SMD 2n3904 2N3904 EN2016ACJ EN2016CJ EN2016CM EN2016CN MPQ3904
Text: ELANTEC INC MIE J> S 312^557 0001757 = ES EL A EN2016/E N 2016A _ _ . 2 .5 Fast QuadNPN A rray ; HIGH PERFORMANCEANALOGINTEGRATEDCIRCUITS H 2 tss o h-* Ci s F eatures G eneral D escription • • • • • The EN2016 family are quad monolithic vertical N P N transis
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2N3904
TPQ3904
MPQ3904
EN2016CN
MDP0031
EN2016ACN
EN2016CJ
EN2016/EN2016A
subcktem2016
tmax t7
Tmax T7 S 800
transistor SMD 2n3904
2N3904
EN2016ACJ
EN2016CM
MPQ3904
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610A04
Abstract: MQ918
Text: M O T O R O L A SC X S T R S / R F 4bE » fli b 3 b 7 2 S 4 0 G S 2 b n b «HOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 PRELIMINARY DATA mini MMCM918HXV/HS (SINGLE) MD918FHXV/HS (DUAL) MD918AFHXV/HS (DUAL) MQ918HXV/HS (QUAD) Discrete Military Operation
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MMCM918HXV/HS
MD918FHXV/HS
MD918AFHXV/HS
MQ918HXV/HS
MIL-S-19500/301
MMCM918
MD918F
MQ918
D918RAF
610A04
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Untitled
Abstract: No abstract text available
Text: MO TO RO LA SC X ST RS /R F 4bE B L.3b?2S4 Q D R S b l ? 2 « n O T b 7^5^5 MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 PRELIMINARY DATA mini MD6002FHXV/HS (DUAL) MQ6002HXV/HS (QUAD) Discrete Military Operation PROCESSED TO MIL-S-19500/XXX SURFACE MOUNTABLE
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MD6002FHXV/HS
MQ6002HXV/HS
MIL-S-19500/XXX
10A-04
MD6002F
MQ6002
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Untitled
Abstract: No abstract text available
Text: M O TO RO LA SC X ST RS /R F UbE D • b3b725M O O ^ b M b T ■ flOTfe-F-JÖ'^S MOTOROLA SEMICONDUCTOR ■ h h h h m h h i TECHNICAL DATA DUO PRELIMINARY DATA mini MMCM4261HXV/HS (SINGLE) MD4261FHXV/HS (DUAL) MQ4261 HXV/HS (QUAD) Discrete Military Operation
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b3b725M
MMCM4261HXV/HS
MD4261FHXV/HS
MQ4261
MIL-S-19500/511
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FT5778M
Abstract: T-43-25 pnp DARLINGTON TRANSISTOR ARRAY til 31a Fujitsu Silicon Darlington Transistor Array
Text: FUJITSU MICRO ELE CTRONICS 31E D E3 374=57^2 DOlbbTD M EIFMI cO '-<v January 1990 Edition 1.1 . — r-".-: —— PRODUCT PROFILE FT5778M Silicon Darlington Transistor Array ABSOLUTE M AXIMUM RATINGS Rating lT a = 2 5°C V alue C o n d itio n s Sy m b o l
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FT5778M
13-Pin
lc/500
CC--30V
FT5778M
T-43-25
pnp DARLINGTON TRANSISTOR ARRAY
til 31a
Fujitsu Silicon Darlington Transistor Array
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MD246
Abstract: MD2484
Text: MOTOROLA SC CXSTRS/R F 4bE b 3 b 72 SH Qoieaao t • n o T b D '7zY2-/s MOTOROLA SEMICONDUCTOR! TECHNICAL DATA MD2484FHXV DUAL) MHQ2484HX, HXV (QUAD) MMCM2484HXV (SINGLE) MQ2484HXV (QUAD) NPN Silicon Dual/Quad Small-Signal Transistors DM O u n n Discrete
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MD2484FHXV
MHQ2484HX,
MMCM2484HXV
MQ2484HXV
MD2484F
MHQ2484
MMCM2484
MQ2484
MD2464F
MD246
MD2484
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T-43-25
Abstract: No abstract text available
Text: GEC PLESSEY SEMICONDS 43E D MM 37bôS22 D O I B ^ Û 3 BIPL SB " T '4 3 >-Z<5 GEC PLESSEY S E M I C O N D U C T O R S SL2363 & SL2364 VERY HIGH PERFORMANCE TRANSISTOR ARRAYS The SL2363C and SL2364C are arrays of transistors internally connected to torm a dual long-tailed pair with tail
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SL2363
SL2364
SL2363C
SL2364C
37bflS2S
T-43-25
200mW
SL2364
T-43-25
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MQ918
Abstract: MD918
Text: MOT OROL A SC XSTRS/R F 4bE b3b?SSM D QQR2fl72 7 «nO Tb ~ 7^¥3iZ S MOTOROLA SEMICONDUCTOR! TECHNICAL DATA h A ä MD918HX, HXV (DUAL) MD918FHXV (DUAL) MHQ918HX, HXV (QUAD) MMCM918HXV (SINGLE) MQ918HXV (QUAD) NPN Silicon Duai/Quad Small-Signal Transistors
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QQR2fl72
MD918HX,
MD918FHXV
MHQ918HX,
MMCM918HXV
MQ918HXV
MD918
b3b72S4
T-43-25
MD918,
MQ918
MD918
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SC XSTRS/R F 4bE D b3fc.7254 00=^27 S I f l OT b MOTOROLA SEMICONDUCTOR TECHNICAL DATA DM0 PRELIMINARY DATA IHflll MMCM2484HXV/HS (SINGLE) MD2484HXV/HS (DUAL) MQ2484HXV/HS (QUAD) Discrete Military Operation PROCESSED TO MIL-S-19500/376 SURFACE MOUNTABLE
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MMCM2484HXV/HS
MD2484HXV/HS
MQ2484HXV/HS
MIL-S-19500/376
176C-01
MMCM2484
MD245
b3b7254
MMCM2484HXV/HS,
MD2484HXV/HS,
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Untitled
Abstract: No abstract text available
Text: ELANTEC MIE D INC E3 312^557 G001757 T El ELA Fast QuadNPN Arrau H IGH P E R FO R M A N C E A N A LO G IN TEG R ATED CIRCUITS "T:cV ?> • 2 ,S F e a tu r e s G e n e ra l D e sc r ip tio n • • • • • The EN2016 family are quad monolithic vertical N PN transis
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G001757
EN2016
2N3904
em2016
120mA
en2016
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GD4007UB
Abstract: No abstract text available
Text: GOLDSTAR 4028757 TECHNOLOGY GOLDSTAR TECHNOLOGY INCi INC. DM e 04E D I 4Dsa?s? aoniLia a 01619 D T-H3 -Z5 GD4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER DESCRIPTION - The 4007UB is a Dual Complementary Pair and an Inverter w ith access to each device. It has three n-channel and three p-channel enhancement mode MOS transistors. For proper
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GD4007UB
4007UB
GD4007UB
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circuit diagram of keypad interface with dtmf
Abstract: telephone keypad interface circuit with dtmf 4327 telephone KEYPAD VARISTOR thm MT4327AC Telephone Dialer Circuit MEMORY ST2 relay
Text: -»p. • V IIT fc L ISO-CMOS M T 4S2JI4820I4327 Programmable Keypad Pulse Dialer S E P T 1981 Features Pin Connections • La st n u m b e r re dial • M u ltip le a c c e s s pa use p ro g ra m m in g • A ny v a lid keypad in p u t o r H O LD IN c a u s e s e x it fro m
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MT4325I4320I4327
300Hz
932Hz
MT4325,
MT4325I26/27
circuit diagram of keypad interface with dtmf
telephone keypad interface circuit with dtmf
4327
telephone KEYPAD
VARISTOR thm
MT4327AC
Telephone Dialer Circuit MEMORY
ST2 relay
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SL3145E
Abstract: No abstract text available
Text: ÛEC P L E S SE Y S E M I C O N D S 43E * B 37bfiS52 0 0 1 3 4 7 4 «J e s p LSB " T 'H V Z S ' GEC PLESSEY | S E M I C O N D U C T O R S I SL3145 1.6GHz NPN TRANSISTOR ARRAYS The SL3145C is a monolithic array of five high frequency low current NPN transistors. The SL3145C consists of 3
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37bfiS52
SL3145
SL3145C
CA3046.
SL3145E
DQ13477
T-43-25
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MHQ6100
Abstract: IC AL 6001
Text: MOTOROLA SC XSTRS/R F Mt E D b3b?2SM 00^5457 b •MOTb MOTOROLA S E M IC O N D U C T O R i TECHNICAL DATA MHQ6100A DM0 Quad Small-Signal Transistor Suffixes: HX, HXV ii/ t u r Processed per MIL-S-19500/xxx NPN/PNP Com plem entary Pair QUAD TRANSISTOR NPN/PNP SILICON
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MHQ6100A
MIL-S-19500/xxx
O-116)
MHQ6100
IC AL 6001
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T-43-25
Abstract: No abstract text available
Text: MO TO RO LA SC X ST R S / R F 4bE I> WÊ b 3 b ? 2 S M 0 0 ^ 2 0 0 3 1 • MOTb ~ £ * 3 -Z S MOTOROLA SEMICONDUCTOR! TECHNICAL DATA DM0 MD2605HXV/HS (DUAL) MMCM2605HXV/HS (SINGLE) MQ2605HXV/HS (QUAD) Surface Mountable Small-Signal Transistors mini Discrete
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MD2605HXV/HS
MMCM2605HXV/HS
MQ2605HXV/HS
MMCM2605
MD2605F
MQ2605
MQ2605
T-43-25
T-43-25
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7252 motorola
Abstract: No abstract text available
Text: MOTOROLA SC -ELOGIO » Ë | b3b7SSE □□"7cm 4 7 T | i ,.636,7252 .MOTOROLA SC LOGIC „ . . . 9 8 0 7 9 4 4 7 .0 T- f3~2& MC14007UB MOTOROLA CMOS SSI D U A L C O M P LE M E N T A R Y PA IR PLUS IN V ER T E R {LOW-POWER COMPLEMENTARY MOS) The M C 1 4 0 0 7 U B m ulti purpose device consistspf three N-channel
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MC14007UB
7252 motorola
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6002F
Abstract: 6002 transistor mhq6002
Text: 4bE MOTOROLA b3b7E5M D S E M IC O N D U C T O R □ □ ‘1 2 4 4 3 MOTOROLA b SC • M O T b X ST R S/R F TECHNICAL DATA Discrete M ilitary Products DM0 M D 6 002 M D 6002F (D u a ls) M H Q 6002 M Q 6002 Dual/Quad /////// NPN/PNP Com plem entary Pairs
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6002F
MIL-S-19500/xxx
6002F
O-116)
6002 transistor
mhq6002
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transistor 342 G
Abstract: MQ3468
Text: MOTOROLA ^ ,vrT B W R SC XSTRS/R ir \ ULF F ]) • » b3b7254 G a s a li D ■MOTb MOTOROLA SEMICONDUCTOR h h h h h h i h h TECHNICAL DATA MD3468HX, HXV (DUAL) . MD3468FHXV (DUAL) MHQ3468HX, HXV (QUAD) MQ3468HXV (QUAD) PNP Silicon Dual/Quad Small-Signal Transistors
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b3b7254
MD3468HX,
MD3468FHXV
MHQ3468HX,
MQ3468HXV
transistor 342 G
MQ3468
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FT5760M
Abstract: Fujitsu Silicon Darlington Transistor Array FT5760
Text: FUJITSU MIC RO ELE CTRONICS 31E D □ 374=î?b2 D01bb70 *1 E3FMI January 1990 Edition 1.1 FUJITSU PRODUCT PROFILE - FT5760M Silicon Darlington Transistor Array ABSOLUTE M AXIM U M RATINGS Ta = 2 5 C Sym b o l Rating C o n d itio n V alue U n it - 5 5 ~ +150
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D01bb
FT5760M
-90mA,
300/us
FT5760M
Fujitsu Silicon Darlington Transistor Array
FT5760
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NS 8002 1151
Abstract: MQ3251A
Text: MOTOROLA SC XSTRS/R F 4bE D • L,3b7254 00=12431 T ■ M O TbTH VZS MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1 DM0 Discrete M ilitary Products PIMP Silicon Dual Quad Sm all-Signal Transistors M D 3251A M D 3251A F (Duals) M H Q 3251A M Q 3251A m in t (Quads)
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3b7254
MIL-S-19500/323
O-116)
NS 8002 1151
MQ3251A
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