TA249
Abstract: ST19 ST19XR34 ST19XS04 ST19XS08
Text: TA249 TECHNICAL ARTICLE The ST19: ST19XR34, ST19XS08, ST19XS04 Smartcard Products STMicroelectronics Rousset, France The new flagship of ST’s industry-leading ST19 family of smart card chips, the ST19XR34 has a massive 96 Kbytes of user ROM, 34 Kbytes of
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TA249
ST19XR34,
ST19XS08,
ST19XS04
ST19XR34
14443-B-compliant
TA249
ST19
ST19XS04
ST19XS08
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it-007
Abstract: CPH5605 IT01080
Text: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON
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ENN6441
CPH5605
CPH5605]
CPH5605
it-007
IT01080
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2SJ560
Abstract: CPH6801 SBS004 TA2492
Text: Ordering number:EN6419 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH6801 DC/DC Converter Applications Package Dimensions unit:mm 2172 [CPH6801] 5 4 0.6 6 0.2 0.15 2.9 2.8 0.05 0.6 • The CPH6801 consists of a P-channel MOSFET that features low ON resistance, ultrahigh-speed switching, and low-voltage drive, and a shottky barrier
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EN6419
CPH6801
CPH6801]
CPH6801
2SJ560
SBS004,
SBS004
TA2492
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2SK3120
Abstract: No abstract text available
Text: Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3120] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
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ENN6103A
2SK3120
2SK3120]
25max
2SK3120
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CPH5605
Abstract: M2168
Text: 注文コード No. N 6 4 4 1 CPH5605 三洋半導体データシート N CPH5605 特長 N チャネルおよび P チャネル MOS 形シリコン電界効果トランジスタ 超高速スイッチング用 ・低オン抵抗超高速スイッチングの N チャネルおよび P チャネル MOS 形電界効果トランジスタを
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CPH5605
600mm2
700mA
700mA,
400mA,
600mm2
IT00790
IT00788
CPH5605
M2168
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PDF
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2062A
Abstract: 2SK3122 DS-17 SANYO
Text: Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3122] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
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ENN6105A
2SK3122
2SK3122]
25max
2062A
2SK3122
DS-17 SANYO
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PDF
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DS-17 SANYO
Abstract: 2SK3122 marking KW
Text: Ordering number:ENN6105A N-Channel Silicon MOSFET 2SK3122 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3122] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
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ENN6105A
2SK3122
2SK3122]
25max
DS-17 SANYO
2SK3122
marking KW
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PDF
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2SK3120
Abstract: No abstract text available
Text: Ordering number:ENN6103A N-Channel Silicon MOSFET 2SK3120 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2062A [2SK3120] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max 1.5
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ENN6103A
2SK3120
2SK3120]
25max
2SK3120
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2SK3119
Abstract: TA2494
Text: Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3119] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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ENN6098A
2SK3119
2SK3119]
25max
2SK3119
TA2494
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CPH5801
Abstract: 2SK3119 SBS005 TA-2491
Text: Ordering number:EN6427 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5801 DC/DC Converter Applications Package Dimensions unit:mm 2171 [CPH5801] 2.9 0.15 0.2 4 3 0.6 5 0.05 2.8 1.6 • The CPH5801 composite device consists of following two devices to facilitate high-density mounting.
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EN6427
CPH5801
CPH5801]
CPH5801
2SK3119
SBS005,
SBS005
TA-2491
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PDF
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CPH6801
Abstract: 2SJ560 SBS004 IT00783 TA2492
Text: 注文コード No. N 6 4 1 9 CPH6801 No. N 6 4 1 9 N1999 新 CPH6801 特長 MOSFET : P チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 ・低オン抵抗 , 超高速スイッチング , 低電圧駆動の P チャネル MOS 形電界効果トランジスタと逆回復時間
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CPH6801
N1999
CPH6801
2SJ560
SBS004
600mm2
IT00624
IT00789
IT00625
2SJ560
SBS004
IT00783
TA2492
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PDF
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2SK2791
Abstract: No abstract text available
Text: Ordering number:ENN6437 N-Channel Silicon MOSFET 2SK2791 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 4V drive. unit:mm 2083B [2SK2791] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2 7.5 0.8 1.6
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ENN6437
2SK2791
2083B
2SK2791]
2092B
2SK2791
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2SK3119
Abstract: CPH5801 IT01081 SBS005 TA-2491
Text: 注文コード No. N 6 4 2 7 CPH5801 No. N 6 4 2 7 N1999 新 CPH5801 MOSFET : N チャネル MOS 形シリコン電界効果トランジスタ SBD : ショットキバリアダイオード DC / DC コンバータ用 特長 ・低オン抵抗 , 超高速スイッチング , 低電圧駆動の N チャネル MOS 形電界効果トランジスタと逆回復時間
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CPH5801
N1999
CPH5801
2SK3119
SBS005
600mm2
IT00628
IT00627
IT01084
2SK3119
IT01081
SBS005
TA-2491
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PDF
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marking ku
Abstract: 2SK3121
Text: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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ENN6104A
2SK3121
2SK3121]
25max
marking ku
2SK3121
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CPH5605
Abstract: No abstract text available
Text: Ordering number:ENN6441 N-Channel and P-Channel Silicon MOSFETs CPH5605 Ultrahigh-Speed Switching Applications Package Dimensions unit:mm 2168 [CPH5605] 2.9 5 4 0.15 3 2.8 0.05 0.6 1.6 0.6 • The CPH5605 incorporates an N-channel MOSFET and a P-channel MOSFET that feature low ON
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ENN6441
CPH5605
CPH5605]
CPH5605
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PDF
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MARKING KU
Abstract: 2SK3121
Text: Ordering number:ENN6104A N-Channel Silicon MOSFET 2SK3121 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3121] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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ENN6104A
2SK3121
2SK3121]
25max
MARKING KU
2SK3121
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PDF
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2SK3119
Abstract: TA2494
Text: Ordering number:ENN6098A N-Channel Silicon MOSFET 2SK3119 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. unit:mm 2062A [2SK3119] 4.5 1.6 2.5 1.0 0.4 0.5 3 1.5 2 4.25max
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ENN6098A
2SK3119
2SK3119]
25max
2SK3119
TA2494
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PDF
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D2015 MOSFET device
Abstract: D2015 TA-2499 FTD2015 ta1004a
Text: Ordering number:ENN6393 N-Channel Silicon MOSFET FTD2015 Load Switching Applications Package Dimensions • Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2015] 3.0 0.65 0.425
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ENN6393
FTD2015
FTD2015]
D2015 MOSFET device
D2015
TA-2499
FTD2015
ta1004a
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40664 SCR
Abstract: CD4001AD ICAN-6267 scr 40430 CD4014AD RCA 40669 RCA 17853 siemens transistor manual CD2500E 40555 SCR
Text: VtC/1 Solid State DATABOOK Series C O S /M O S Digital Integrated Circuits This D A T A B O O K contains complete data and related appli cation notes on COS/M OS digital integrated circuits presently available from R C A Solid State Division as standard products.
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OCR Scan
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-500B
CR316
CR317
CR322
CR323
40664 SCR
CD4001AD
ICAN-6267
scr 40430
CD4014AD
RCA 40669
RCA 17853
siemens transistor manual
CD2500E
40555 SCR
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PDF
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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PDF
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2n3773 power Amplifier circuit diagrams
Abstract: SCR Handbook, rca HC2000H rca transistor npn a13 B0241C npn transistor RCA 467 40659 triac t6440m RCa T2850D DIAC D3202U
Text: RCA Power Devices This DATABOOK contains com plete technical information on the full line o f RCA solid-state power devices: power transistors, rf power transistors, power hybrid circuits, triacs, SCR’s, diacs, silicon rectifiers, and rectifier assemblies. A complete
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AN-6671
G4000)
G4000
2n3773 power Amplifier circuit diagrams
SCR Handbook, rca
HC2000H
rca transistor npn a13
B0241C
npn transistor RCA 467
40659
triac t6440m
RCa T2850D
DIAC D3202U
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