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    Motorola Semiconductor Products MTB30N06VL

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    06vl

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TB30N06VL/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TB30N06VL TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance


    OCR Scan     		PDF MTB30N06VL/D TB30N06VL 06vl

    B30n

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r's Data Sheet TMOS V™ Power Field Effect Transistor D2PAK for Surface Mount TB30N06VL Motorola Preferred Device TMOS POWER FET 30 AMPERES 60 VOLTS RDS on = 0.050 OHM N-Channel Enhancement-Mode Silicon Gate


    OCR Scan     		PDF TB30N06VL B30n