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    TC514 Price and Stock

    KOA Speer Electronics Inc RK73B1HTTC514J

    RES 510K OHM 5% 1/20W 0201
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    DigiKey RK73B1HTTC514J Digi-Reel 8,700 1
    • 1 $0.1
    • 10 $0.035
    • 100 $0.0187
    • 1000 $0.011
    • 10000 $0.00814
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    RK73B1HTTC514J Cut Tape 8,700 1
    • 1 $0.1
    • 10 $0.035
    • 100 $0.0187
    • 1000 $0.011
    • 10000 $0.00814
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    Mouser Electronics RK73B1HTTC514J 19,292
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    TTI RK73B1HTTC514J Reel 30,000
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    PEI Genesis KPTC5-14-15SD

    KPTC 15C 14#20 1#16 SKT PLUG
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    DigiKey KPTC5-14-15SD Bulk 3,458 1
    • 1 $11.09
    • 10 $10.76
    • 100 $9.62
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    ITW Lumex LDD-HTC514RI

    DISPLAY 7SEG 0.56" DBL RED 18DIP
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    DigiKey LDD-HTC514RI Tube 1,240 1
    • 1 $2.36
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    • 1000 $0.90026
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    Mouser Electronics LDD-HTC514RI 306
    • 1 $2.13
    • 10 $1.35
    • 100 $1.11
    • 1000 $0.858
    • 10000 $0.788
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    Newark LDD-HTC514RI Bulk 194 1
    • 1 $0.68
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    RS LDD-HTC514RI Bulk 1,000
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    Master Electronics LDD-HTC514RI 300
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    • 100 $1.105
    • 1000 $0.806
    • 10000 $0.806
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    PEI Genesis KPTC5-14-12SD

    KPTC 12C 8#20 4#16 SKT PLUG
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    DigiKey KPTC5-14-12SD Bulk 269 1
    • 1 $14.54
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    KPTC5-14-12SD Bulk 3 1
    • 1 $26.62
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    • 100 $26.62
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    ITW Lumex LDT-C514RI

    DISPLAY 7SEG 0.56" TRP RED 28DIP
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    DigiKey LDT-C514RI Bulk 143 1
    • 1 $3.69
    • 10 $3.69
    • 100 $2.39615
    • 1000 $1.63045
    • 10000 $1.435
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    Mouser Electronics LDT-C514RI 245
    • 1 $3.55
    • 10 $2.4
    • 100 $2.26
    • 1000 $1.63
    • 10000 $1.43
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    Newark LDT-C514RI Bulk 2,002
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    RS LDT-C514RI Bulk 1,001
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    • 10000 $3.65
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    TC514 Datasheets (500)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC514 Microchip Technology Precision Analog Front Ends Original PDF
    TC514 Microchip Technology Precision Analog Front Ends Original PDF
    TC514 TelCom Semiconductor PRECISION ANALOG FRONT ENDS Original PDF
    TC514100 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    TC5141001 Toshiba 4,194,304 WORD x 1 BIT DYNAMIC RAM Scan PDF
    TC514100AAZL-10 Toshiba 4,194,304 WORD x BIT DYNAMIC RAM Scan PDF
    TC514100AAZL-70 Toshiba 4,194,304 WORD x BIT DYNAMIC RAM Scan PDF
    TC514100AAZL-80 Toshiba 4,194,304 WORD x BIT DYNAMIC RAM Scan PDF
    TC514100AFT-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AFT-50 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AFT-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AFT-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AFTL-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AFTL-60 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AFTL-70 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AFTL-80 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AJ Toshiba 4,194,304 WORD x BIT DYNAMIC RAM Scan PDF
    TC514100AJ-10 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    TC514100AJ-10 Toshiba 100 ns, 1-bit generation dynamic RAM Scan PDF
    TC514100AJ-60 Unknown Static RAM, Dynamic RAM, Video RAM - Short Form Datasheets Scan PDF
    ...

    TC514 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A9RV

    Abstract: 5s a315 A327
    Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


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    PDF TC514900AJLL-70/80 TC514900AJLL TC514900AJLI/70/80 TC514900AJLL70/80 A9RV 5s a315 A327

    4A04I

    Abstract: tc514100a
    Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


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    PDF TC51441OAP/AJ/ASJ/AZ-- TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 TC51441 TC514410AP/AJ/ASJ/AZ 350mil) TC514100AP/AJ/ASJ/AZ. TC5141OOAP/AJ/ASJ/AZ-60 4A04I tc514100a

    TC514170BJ-80

    Abstract: tc514170 TC514170BJ80
    Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques


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    PDF TC514170BJ-70/80 TC514170BJ TC514170BJ-80 tc514170 TC514170BJ80

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY 4,194,304 WORD x 1 BIT DYNAMIC RAM DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced circuit techniques to provide wide operating m argins, both internally and to the system user.


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    PDF TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/A2-70, TC514101AP/AJ/ASJ/AZ-80 TC514101AP/AJ/ASJ/AZ-10

    TC514265DJ

    Abstract: TC514265D TC514265 SOJ40-P-400
    Text: TOSHIBA TC514265DJ/DFT-50/60/70 PRELIMINARY 262,144 WORD X 16 BIT EDO HYPER PAGE DYNAMIC RAM Description TC514265DJ/DFT is an EDO (hyper page) dynamic RAM organized as 262,144 words by 16 bits. TC514265DJ/ DFT utilizes Toshiba's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide oper­


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    PDF TC514265DJ/DFT-50/60/70 TheTC514265DJ/DFT TheTC514265DJ/ TC514265DJ/DFT TC514265D J/DFT-50/60/70 DR04041293 TC514265DJ TC514265 SOJ40-P-400

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC514800AJ/AZ/AFT-70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJ/AZ/AFT is the new generation dynam ic RAM organized 524,288 word by 8 bit. The TC514800A J/AZ/AFT utilizes T oshiba’s CM OS silicon gate process technology as w ell as advanced circuit


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    PDF TC514800AJ/AZ/AFT-70/80 TC514800AJ/AZ/AFT TC514800A

    TC514258

    Abstract: 4256AP 58ab AZ-70
    Text: TOSHIBA MOS MEMORY PRODUCTS TC514258AP/AJ/AZ-70, TC514258AP/AJ/AZ-80 TC514258AP/AJ/AZ-10 DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA'S CMOS Silicon gate process technology as


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    PDF TC514258AP/AJ/AZ-70, TC514258AP/AJ/AZ-80 TC514258AP/AJ/AZ-10 TC514258AP/AJ/AZ TC514258AP/AJ/AZ-70. TC514258AP/A4/AZ-80 TC514258 4256AP 58ab AZ-70

    A100COLUMN

    Abstract: No abstract text available
    Text: 4 ,1 9 4 ,3 0 4 W ORD x 1 BIT D Y N A M IC R A M * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514101AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514101AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


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    PDF TC514101AP/AJ/ASJ/AZ 300/350mil) TC514101AP/ASJ/AZ. TC514101AP/AJ/ASJ/AZ-60 A100COLUMN

    tc51100ap

    Abstract: DIP18-P-300E TC514100
    Text: 4,1 94 ,3 0 4 W O R D X PRELIMINARY 1 BIT D Y N A M IC RAM DESCRIPTION The TC514100AF/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


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    PDF TC514100AF/AJ/ASJ/AZ TC514100AP/AJ/ASJ/AZ 300/350mil) TC514100AP/AJ/ASJ/AZ. TC5141 TC514100AP/AJ/ASJ/AZ-80 tc51100ap DIP18-P-300E TC514100

    K557

    Abstract: TC511000Aj THM361020S-80 THM361020S thm361020
    Text: W\ Ut -IKUWH'i1!'11-iJHii - - - : — THM361020S-80, 10 THM361020SG-80, 10 1,048,576 W O R D S X 36 BIT D Y N A M IC RAM M O DULE DESCRIPTION The THM36102CS is a 1,048,576 words by 36 bits dynamic RAM module which assembled 8 pcs of TC514400J and 4 pcs of TC511000AJ on the printed circuit board. The THM361020S can be as well


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    PDF THM361020S-80, THM361020SG-80, THM36102CS TC514400J TC511000AJ THM361020S K557 THM361020S-80 thm361020

    TC514100

    Abstract: 514100A
    Text: 4,194,304 WORD X 1 BIT DYNAMIC RAM DESCRIPTION THE TC514100A is the new generation dynamic RAM organized 4,194,304 word by 1 bit. The TC514410ASJ/AZ/AFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


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    PDF --------------TC514100ASJ/AZ/AFT-60/70/80 TC514100A TC514410ASJ/AZ/AFT 300mil) TC51400/ASJ/A27AFT. TC514100 514100A

    TC514256

    Abstract: No abstract text available
    Text: 524,288 W O RD S x 40 BIT D Y N A M IC RAM M O D U LE DESCRIPTION The THM405120ASG/BSG is a 524,288 words by 40 bits dynamic RAM m odule which assem bled 20 pcs o f TC514256AJ/BJ on the printed circuit board. The THM405120ASG/BSG is optim ized for application to the system s which are required high density


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    PDF THM405120ASG/BSG TC514256AJ/BJ 110ns 130ns 150ns 100ns 180ns B-285 THM405120BSG-60 TC514256

    KSR128

    Abstract: a95x A348 20 pin
    Text: TC514400ÂPL/ÂJL/ASJL/AZL-60 * This is advanced information and specifica­ tions are subject to change without notice. 1,048,576 W ORD x 4 BIT D YN A M IC RAM DESCRIPTION The TC514400APL/AJL/ASJL/AZL is the new generation dynamic RAM organized 1,048,576 words by


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    PDF TC514400 JL/ASJL/AZL-60 TC514400APL/AJL/ASJL/AZL 300/350mil) TC514400APL/AJL/ASJL/AZL. a512K TC514400APL/AJL/ASJL/AZL-60 KSR128 a95x A348 20 pin

    THM365120AS80

    Abstract: tc51256t THM365120 TC51256
    Text: TOSHIBA MOS MEMORY PRODUCTS THM365120AS-70, 80, 10 description] The TKM365120AS is a 524,288 words by 36 bits dynamic RAM module which assembled 16 pcs of TC514256AJ and 8 pcs of TC51256T on both sides the printed circuit board. The THM365120AS is optimized for application to the system which are required


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    PDF THM365120AS-70, TKM365120AS TC514256AJ TC51256T THM365120AS THM365120AS-70 THM365120AS-80 THM365120AS-10 100ns 130ns THM365120AS80 THM365120 TC51256

    TC514256AJ

    Abstract: TC514256
    Text: 262,144 W O R D S x 8 BIT D Y N A M IC RAM PRELIMINARY M ODULE DESCRIPTION The THM82500AS is a 262,144 words by 8 bits dynamic RAM module which assembled 2 pcs of TC514256AJ on the printed circuit board. The THM82500AS is optimized for application to the systems which are required high density and large capacity such as m ain memory of the computers


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    PDF THM82500AS TC514256AJ 144words THM825000 AS-70 130ns THM825Q0 150ns TC514256

    toshiba 7 pin a215

    Abstract: A227
    Text: TOSHIBA TC514800AJL/AFTL70/80 524,288 WORD X 8 BIT DYNAMIC RAM DESCRIPTION The TC514800AJL/AFTL is the new generation dynamic RAM organized 524,288 word by 8 bit. The TC514800AJL/AFTL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


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    PDF TC514800AJL/AFTL70/80 TC514800AJL/AFTL toshiba 7 pin a215 A227

    Untitled

    Abstract: No abstract text available
    Text: 1,M3,575 1,'ORDX 4 BIT DYNAMIC RAM * This is a ^ a n c e d information and specifications are subject to change without notice. DESCRIPTION The TC514400JL/ZL is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514400JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as


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    PDF TC514400JL/ZL TC514400JL/ZL-80 TC514400JL/ZL--

    MO-23

    Abstract: THM362040ASG-60 MO23 CDQ2 THM362040ASG
    Text: TOSHIBA 'IHM36204QAS/ASG-60/70/80 2,097,152 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM362040A is a 2,097,152 word by 36 bit dynamic RAM module which is assembled with 18 TC514400ASJ devices and 8 TC511000BFT devices on the printed circuit board. This module can be used as


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    PDF IHM36204QAS/ASG-60/70/80 THM362040A TC514400ASJ TC511000BFT 130ns THM362040AS/ASG-60/70/80 THM362040AS/ASG THM362040AS/ASG-60 TC514400ASJ TC511000BFT MO-23 THM362040ASG-60 MO23 CDQ2 THM362040ASG

    A302 w3

    Abstract: aa z8b
    Text: TOSHIBA MOS MEMORY PRODUCTS TC514410J/Z-80» TC514410J/Z-10 DESCRIPTION’ The TC514410J/Z i s th e new g e n e r a t i o n dynamic RAM o r g a n i z e d 1 , 0 4 8 , 5 7 6 w ords by 4 b its. The TC514410J/Z u t i l i z e s TOSHIBA'S CMOS S i l i c o n g a t e p r o c e s s t e c h n o l o g y a s


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    PDF TC514410J/Z-80» TC514410J/Z-10 TC514410J/Z 514410J/Z TC514410J/Z-80, TC514410J/M A302 w3 aa z8b

    Untitled

    Abstract: No abstract text available
    Text: 1,048,576 W O R D X 4 BIT D YN A M IC RAM * This is advanced information and specifica­ tions are subject to change without notice. DESCRIPTION The TC514410AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


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    PDF TC514410AP/AJ/ASJ/AZ 350mil) TC51441OAP/AJ/ASJ/AZ-60

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA LOGIC/MEMORY 4,194,304 W O R D X 42E » ^ 7 2 4 0 0 Q 2 0 ci7b T B 1 T 0 S 2 PRELIMINARY 1 "BIT D Y N A M IC R A M 7 - ji. - 2 3 - lS r DESCRIPTION The TC514100AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


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    PDF 0Q20c TC514100AP/AJ/ASJ/AZ TC514100 300/350mil) TC5141OOAP/AJ/ASJ/AZ-70, TC514100AP/AJ/ASJ/AZ-80 TC5141OOAP/AJ/ASJ/AZ-10

    Untitled

    Abstract: No abstract text available
    Text: 1 0 4 8 ,5 7 6 W O R D x PRELIMINARY 4 BIT D Y N A M IC R A M DESCRIPTION The TC514402AP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514402AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


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    PDF TC514402AP/AJ/ASJ/AZ 300/350m 5514402AP/AJ/ASJ/AZ-80 TC514402AP/AJ/ASJ/AZâ

    Untitled

    Abstract: No abstract text available
    Text: * T h is a re is advanced s u b je c t to in fo rm a tio n change w ith o u t and specifications notice. 1 , 0 4 8 , 5 7 6 W O R D x 4 BIT D Y N A M I C R A M DESCRIPTION The TC514410J/Z is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410J/Z utilizes TOSHIBA'S CMOS Silicon gate process technology as


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    PDF TC514410J/Z O-1/03

    Untitled

    Abstract: No abstract text available
    Text: 4,194,304 WORD X 1 BIT'DYNAMIC RAM * This is advanced information and specifications are subject to change without notice. DESCRIPTION The TC514100JL/ZL is the new generation dynamic RAM organized 4,194,304 words by 1 bit. The TC514100JL/ZL utilizes TOSHIBA'S CMOS Silicon gate process technology as well as


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    PDF TC514100JL/ZL TC514100J/Z. TC514100JLVZL-80 TC514100JL/ZL-10