TCS3200
Abstract: TC532000
Text: 2 M B IT 2 5 6 K W O R D X 8 B IT C M O S M A S K R O M D E S C R IP T IO N The TC 532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The TC532000AP / A F is fabricated using Toshiba’s advanced CMOS technology which provides the
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OCR Scan
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32000A
TC532000AP
150ns,
TCS32000AP
TC532000A
600mil
32pin
525mil
150ns
TCS3200
TC532000
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PDF
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TCS3200
Abstract: 256KW
Text: SILICON STACKED GATE MOS INTEGRATED CIRCUIT - TC532000AP/AF 2M BIT 256K W O R D x 8 B IT C M O S M A S K RO M D ESCRIPTIO N T h e T C 5 3 2 0 0 0 A P / A F is a 2 ,0 9 7 ,1 5 2 b its re a d on ly m em ory o rgan ized a s 262 ,1 4 4 w ords b y 8 b its.
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OCR Scan
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TC532000AP/AF
20//A.
A0-A17
A0-A17
TCS3200
256KW
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA TC532000AP/AF SILICON STACKED GATE CMOS 262,144 WORD x 8 BIT CMOS MASK ROM D e scriptio n The TC532000AP/AF is a 2,097,152 bit read only memory organized as 262,144 words by 8 bits. The TC532000AP/AF is fabricated using Toshiba’s advanced CMOS technology which results in high speed and low power
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OCR Scan
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TC532000AP/AF
TC532000AP/AF
150ns,
600mil
32-pin
525mil
32-pln
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PDF
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SOP32 525mil
Abstract: DIP32 AF-15
Text: m ÈÊÈÊm 2M BIT 2 5 6 K W O R D X 8 B IT CM O S M A S K ROM DESCRIPTION The TC532000A P/A F is a 2,097,152 bits read only memory organized as 262,144 words by 8bits. The T C 532000A P/A F is fabricated using Toshiba’s advanced CMOS technology which provides the
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OCR Scan
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TC532000AP/AF
150ns,
20/aA.
600mil
32pin
525mil
SOP32 525mil
DIP32
AF-15
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PDF
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