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    Toshiba America Electronic Components TC55V16256JI-15

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components TC55V16256JI-15 14
    • 1 $60.2996
    • 10 $54.2696
    • 100 $54.2696
    • 1000 $54.2696
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    TC55V16256J Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55V16256J Toshiba 262,144-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16256J-12 Toshiba 262,144 Word By 16 Bit CMOS Static RAM Scan PDF
    TC55V16256J-12 Toshiba 262,144-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16256J-15 Toshiba 262,144 Word By 16 Bit CMOS Static RAM Scan PDF
    TC55V16256J-15 Toshiba 262,144-Word BY 16-BIT CMOS STATIC RAM Scan PDF
    TC55V16256JI Toshiba TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS Original PDF
    TC55V16256JI-12 Toshiba Scan PDF
    TC55V16256JI-15 Toshiba Scan PDF

    TC55V16256J Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SOJ44-P-400-1

    Abstract: No abstract text available
    Text: TC55V16256JI/FTI-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    Original     		PDF TC55V16256JI/FTI-12 144-WORD 16-BIT TC55V16256JI/FTI 304-bit SOJ44-P-400-1

    SOJ44-P-400-1

    Abstract: No abstract text available
    Text: TC55V16256J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high speed, it


    Original     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-400-1

    GS8160Z18BT-150

    Abstract: TC55V16186FF-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 TC55V16256FT-25
    Text: TOSHIBA For Toshiba: Add "I" after package designator for Industrial Temp. For example: the TC55VD818FF-133 becomes the TC55VD818FFI-133 for industrial temp. For GSI: Add "I" at the end of part number for Industrial Temp. TC55V16176FF-150 TC55V16176FF-167


    Original     		PDF TC55VD818FF-133 TC55VD818FFI-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-133 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 GS8160Z18BT-150 TC55V16186FF-133 TC55V16176FF-150 TC55V16176FF-167 TC55V16186FF-150 TC55V16186FF-167 TC55V16256FT-12 TC55V16256FT-15 TC55V16256FT-20 TC55V16256FT-25

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original     		PDF TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90

    th50vpf

    Abstract: TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00
    Text: MOS Memories Dynamic RAMs Static RAMs NOR Flash Memories NAND E2PROM Media Card MCPs multi-chip packages z 2 z 3 z 10 z 11 z 12 z 13 1 Dynamic RAMs Fast Cycle RAM (FCRAMTM ) (DDR) Capacity 256 Mbits 288 Mbits Product No. — TC59LM806CFT-50 — TC59LM806CFT-55


    Original     		PDF TC59LM806CFT-50 TC59LM806CFT-55 TC59LM806CFT-60 TC59LM814CFT-50 TC59LM814CFT-55 TC59LM814CFT-60 TC59LM818DMB-30 TC59LM818DMB-33 TC59LM818DMB-40 64M/32M th50vpf TH50VPF5783 TC55VEM208ASTN55 th58nvg TC554161AFT-70L TC554161AFT-70 TC55V8512JI-12 TC55VD1636FFI-150 tc58128aft TC58NVG0S3AFT00

    philips diode PH 33J

    Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without


    Original     		PDF 10-BIT QS3L384) QS3L2384 QS3L384 QS3L2384 philips diode PH 33J UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    UM61256FK-15

    Abstract: YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624
    Text: QUICKSWITCH PRODUCTS HIGH-SPEED CMOS QUICKSWITCH QUAD 2:1 MUX/DEMUX QS3257 QS32257 FEATURES/BENEFITS DESCRIPTION • • • • • • • • The QS3257 is a high-speed CMOS LVTTL-compatible Quad 2:1 multiplexer/demultiplexer. The QS3257 is a function and pinout compatible QuickSwitch


    Original     		PDF 74F257, 74FCT257, 74FCT257T QS32257 QS3257 QS32257 UM61256FK-15 YD 6409 philips diode PH 33J um61256 um61256ak-15 PZ 5805 PHILIPS UM6164 KM6264BLS-7 UM61256ak sram IDT8M624

    TC55V16256J

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16256J/FT-12,-15 TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 262,144-WORD BY 16-BIT CM O S STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-4QO-1 44-P-400-0 TC55V16256J

    SOJ44-P-400-1

    Abstract: TC55V16256FTI TC55V16256JI
    Text: TO SH IBA T C 5 5 V 16256J l/FTI-12#- 1 5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256JI/FTI-12 144-WORD 16-BIT TC55V16256JI/FTI 304-bit SOJ44-P-4QO-1 44-P-400-0 W0-13tM SOJ44-P-400-1 TC55V16256FTI TC55V16256JI

    TC55V16256J

    Abstract: No abstract text available
    Text: TO SHIBA TC55V16256J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-4QO-1 44-P-400-0 TC55V16256J

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V16256J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CM OS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-400-1 44-P-400-0

    26C20

    Abstract: No abstract text available
    Text: TO SHIBA TC55V16256J/FT-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-400-1 44-P-400-0 26C20

    SOJ44-P-400-1

    Abstract: TC55V16256J
    Text: TO SH IBA T C 55V 16256J/F T-12,-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-4QO-1 44-P-400-0 W0-13tM SOJ44-P-400-1 TC55V16256J

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC55V16256J/FT-12,-15.-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-400-1 rT27i 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V16256J l/FTI-12#-15 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J l/FTI-12# TC55V16256JI/FTI 304-bit SOJ44-P-400-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V16256JI/FTI-12.-15 TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256JI/FTI is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256JI/FTI-12 144-WORD 16-BIT TC55V16256JI/FTI 304-bit SOJ44-P-400-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TENTATIVE TC55V16256J/FT-12,-15.-20 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 262,144-WORD BY 16-BIT CMOS STATIC RAM DESCRIPTION The TC55V16256J/FT is a 4,194,304-bit high-speed static random access memory SRAM organized as 262,144 words by 16 bits. Fabricated using CMOS technology and advanced circuit techniques to provide high


    OCR Scan     		PDF TC55V16256J/FT-12 144-WORD 16-BIT TC55V16256J/FT 304-bit SOJ44-P-400-1 FT271 44-P-400-0