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    TC55V2161 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC55V2161FT Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FT-10 Toshiba 131,072 Word by 16 Bit Static RAM Scan PDF
    TC55V2161FT-10 Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FT-10L Toshiba 131,072 Word by 16 Bit Static RAM Scan PDF
    TC55V2161FT-10L Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FT-85 Toshiba 131,072 Word by 16 Bit Static RAM Scan PDF
    TC55V2161FT-85 Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FT-85L Toshiba 131,072 Word by 16 Bit Static RAM Scan PDF
    TC55V2161FT-85L Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FTI Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FTI-10 Toshiba 131,072 Word by 16 Bit Static RAM Scan PDF
    TC55V2161FTI-10 Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FTI-10L Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FTI-85 Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF
    TC55V2161FTI-85L Toshiba 131,072 WORD BY 16 BIT STATIC RAM Scan PDF

    TC55V2161 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC554161FTL-85L

    Abstract: TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90
    Text: Index n INDEX TC551001CF-55 TC551001CF-55L TC551001CF-70 TC551001CF-70L TC551001CF-85 TC551001CF-85L TC551001CFI-70 TC551001CFI-70L TC551001CFI-85 TC551001CFI-85L TC551001CFT-55 TC551001CFT-55L TC551001CFT-70 TC551001CFT-70L TC551001CFT-85 TC551001CFT-85L


    Original     		PDF TC551001CSRI-85L TC551001CST-55 TC551001CST-55L TC551001CST-70 TC551001CST-70L TC551001CST-85 TC551001CST-85L TC551001CSTI-70 TC551001CSTI-70L TC551001CSTI-85 TC554161FTL-85L TC55257DPL-70L TC55257DFL-70L TC55257DPL-85L TC55257DFI-85L TC551001CF tc55257dfl-85l TC58F400FTI-90

    TSOP44 Package

    Abstract: HY628400ALLG-70 HY62WT08081E-DG70I HY628100BLLG-70 SO28 package datasheet cy62127bvll-70bai so32 HY628400ALLT2-70 M68AF511AL55MC1 K6T1008C2E-GB70
    Text: Static Random Access Memories Asynchronous low power and synchronous fast SRAM solutions www.st.com/sram Selection Guide with Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions Static Random Access Memories STMicroelectronics has decided to target different growing market segments


    Original     		PDF

    TC554161A

    Abstract: HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC554161A HY62WT08081E K6X8008C2B CY62148E r1lv0416 K6F1616 k6t0808c1d BH616UV4010 BH616UV8010 BH62UV4000

    256kx8 sram 5v

    Abstract: toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb
    Text: Toshiba America Electronics Search SRAM - Low Power Asynchronous Press Releases | Select One DRAM Components DRAM Components Archive DRAM Modules DRAM Modules (Archive) Flash - NOR Flash - NAND 5V Flash - NAND 3.3V Flash - SmartMedia Multi-Chip Package SRAM - Low Power


    Original     		PDF TC551001C, 128Kx8 TC551001CI, TC554001A-V TC554001AI ismatch/20000921/09112000/TOSH/09112000/1 TC55V200 TC55V2001 TC55V2001I 256kx8 sram 5v toshiba TSOP toshiba Nand flash bga SRAM 512*8 NAND FLASH BGA 256kx8 sram 128kx16 toshiba nand Toshiba America Electronics toshiba nand flash 4Mb

    mn4117405

    Abstract: NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51
    Text: ISSI CROSS REFERENCE GUIDE Integrated Silicon Solution, Inc. ISSI ® Integrated Silicon Solution, Inc. CROSS REFERENCE GUIDE SRAM DRAM EEPROM EPROM MICROCONTROLLER JUNE 1999 Integrated Silicon Solution, Inc. CP005-1F 6/1/99 1 ISSI CROSS REFERENCE GUIDE


    Original     		PDF CP005-1F IS89C51 Z16C02 Z86E30 ZZ16C03 Z8036 Z8536 Z8038 Z5380 Z53C80 mn4117405 NN5118165 XL93LC46AP NN514265 MS6264L-10PC w24M257 NN514265A w24m257ak-15 HY62256ALP10 mhs p80c51

    TC55VEM416AXBN

    Abstract: K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN
    Text: BSI Ultra Low Power SRAM Cross Reference Table BH-Series Density Config. x8 Part No. BH62UV4000 Speed ns 55 Iccsb1 Typical (at 25C) 2V 3V 5V Icc 3V 1MHz fmax 5V fmax 2uA 1.5mA N.A. 2uA N.A 9mA Voltage (V) Renesas Hynix BH616UV4010 55 2uA 2uA N.A 1.5mA 9mA


    Original     		PDF BH62UV4000 BH616UV4010 BH62UV8000 BH616UV8010 BH62UV1600 BH616UV1610 TC55V4000 TC55VEM208ASTN T16LV8017 K6X8008T2B TC55VEM416AXBN K6F8016U6B HY62WT08081E K6X4008C1F BH-Series CY62147CV30 Hynix Cross Reference samsung k6x1008c2d CY62148E TC55VEM216ABXN

    UM62256EM-70LL

    Abstract: UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723
    Text: Cross Reference Your Memory Provider Partnumber Brand µPD4218165 NEC µPD4218165 NEC µPD424260 NEC µPD431000A NEC µPD43256B NEC µPD43256B-B NEC µPD43256BGU-70LL NEC µPD43256BGW-70 NEC µPD441000L-B NEC µPD442000L-B NEC µPD442012L-XB NEC µPD444012L-B


    Original     		PDF PD4218165 PD424260 PD431000A PD43256B PD43256B-B PD43256BGU-70LL PD43256BGW-70 PD441000L-B PD442000L-B UM62256EM-70LL UM611024 UM62256EM KM416S1020BTG10 AS4C256K16FO-60JC um62256e M27c4000 KM416S1020BT-G10 HM62256 sram ks0723

    CYPRESS SAMSUNG CROSS REFERENCE

    Abstract: TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70
    Text: 7700 Irvine Center Dr. STE: 420 Irvine, CA 92618 Contact: Lena Patel email: lena@brilliancesemi.com Phone Number: 949-789-6274 Fax Number: 949-789-6277 Website: www.brilliancesemi.com SRAM CROSS REFERENCE Memory Size Operating Voltage SAMSUNG 1.2 ~ 2.4V 1.8 ~ 3.6V


    Original     		PDF K6Y0808C1D BS62XV1024-25 BS62UV1024-15 BS62LV1024-70 BS62XV2000-25 BS62UV2000-15 BS62LV2000-10 BS62LV2000-70 BS62XV256-25 32Kx8 CYPRESS SAMSUNG CROSS REFERENCE TC55V400-70 toshiba 32k*8 sram TC55257DI-L-70 tbb1458b BS62LV1024-70 BS62UV1024-15 BS62UV256-15 K6F8008S2M BS62LV4005-70

    2fu smd transistor

    Abstract: Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT
    Text: Memory MOS Memory Lineup • Static RAM Capacity bits Device TC55V1001ASTI/ASRI 1M Organization Access time (ns) Power supply voltage (V) 128 K X 8 TC55V2001STI/SRI Package Pins TSOP(8 X 13.4) 32 TSOP- (10 X 14) 40 TSOP- (0.4 inch) 44 256 K X 8 TC55V020FT/TR


    Original     		PDF TC55V1001ASTI/ASRI TC55V2001STI/SRI TC55V020FT/TR TC55V2161FTI TC55V200FT/TR TC55V040FT/TR TC55V400FT/TR TC58VT TC75S55FU 2fu smd transistor Infrared sensor TSOP 1738 diode ESM 765 tsop Ir sensor smd 1608 TSOP44 Package layout TSOP infrared infrared sensor (TSOP 1738)data sheet Compact High-Current and Low VF Surface Mounting Device SBD TC58V16BFT

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		PDF 64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA T C 5 5 V 2 161 FT-85f-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF FT-85f-10 072-WORD 16-BIT TC55V2161FT 152-bit 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T C55V2161 FTI-85f-10,-85L,-10L TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT TENTATIVE SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF C55V2161 FTI-85f-10 072-WORD 16-BIT TC55V2161FTI 152-bit

    Untitled

    Abstract: No abstract text available
    Text: TC55V2161 FT-85,-10,-85L,-10L T O SH IB A TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF TC55V2161 FT-85 072-WORD 16-BIT TC55V2161FT 152-bit

    Untitled

    Abstract: No abstract text available
    Text: TO SH IBA TC55V2161 FT-85,-10.-85L-1 OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF TC55V2161 FT-85 -85L-1 072-WORD 16-BIT TC55V2161FT 152-bit

    TC55V2161FTI

    Abstract: No abstract text available
    Text: TO SHIBA TC55V2161 FTI-85#-10#-85L#-1OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF TC55V2161 FTI-85 072-WORD 16-BIT TC55V2161FTI 152-bit

    Untitled

    Abstract: No abstract text available
    Text: T O S H IB A TC55V2161 FTI-85,-10,-85L,-1 OL TENTATIVE T O SH IB A M O S DIGITAL INTEG RATED CIRCUIT SILICON GATE C M O S 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF TC55V2161 FTI-85 072-WORD 16-BIT TC55V2161FTI 152-bit

    55V2161FTI

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2161 FTI-85,-10.-85L-1 OL TENTATIVE TOSHIBA M O S DIGITAL INTEGRATED CIRCUIT SILICON GATE CM O S 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF TC55V2161 FTI-85 -85L-1 072-WORD 16-BIT TC55V2161FTI 152-bit 44-P-400-0 55V2161FTI

    TC55V2161FT

    Abstract: No abstract text available
    Text: TO SHIBA TC55V2161 FT-85#-10#-85L#-1OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		PDF TC55V2161 FT-85 072-WORD 16-BIT TC55V2161FT 152-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2161 FT-85,-10.-85L.-1 OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		PDF TC55V2161 FT-85 072-WORD 16-BIT TC55V2161FT 152-bit -85L-1 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2161 FT-85#-10#-85L#-1OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FT is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16 bits. Fabricated using Toshiba’s CMOS Silicon gate process technology, this device operates from a single 2.7


    OCR Scan     		PDF TC55V2161 FT-85# 072-WORD 16-BIT TC55V2161FT 152-bit 44-P-400-0

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA TC55V2161 FTI-85,-10,-85L,-1 OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF TC55V2161 FTI-85 072-WORD 16-BIT TC55V2161FTI 152-bit

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC55V2161 FTI-85#-10#-85L#-1OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF TC55V2161 FTI-85# 072-WORD 16-BIT TC55V2161FTI 152-bit 44-P-400-0

    TC55V2161FTI

    Abstract: 85L1
    Text: TO SHIBA TC55V2161 FTI-85#-10#-85L#-1OL TENTATIVE TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 131,072-WORD BY 16-BIT STATIC RAM DESCRIPTION The TC55V2161FTI is a 2,097,152-bit static random access memory SRAM organized as 131,072 words by 16


    OCR Scan     		PDF TC55V2161 FTI-85 072-WORD 16-BIT TC55V2161FTI 152-bit 85L1