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    KIOXIA TC58BYG1S3HBAI6

    NAND Flash 1.8V 2Gb 24nm I-Temp SLC NAND (EEPROM)
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    TC58BYG1S3HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58BYG1S3HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 2G PARALLEL 67VFBGA Original PDF

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    Text: TC58BYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58BYG1S3HBAI6 is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58BYG1S3HBAI6 TC58BYG1S3HBAI6 2048blocks. 2112-byte 2112-bytes 2013-01-31C