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TC58NVG3S0F Price and Stock

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KIOXIA TC58NVG3S0FTA00 IC FLASH 8GBIT PARALLEL 48TSOP I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC58NVG3S0FTA00	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	TC58NVG3S0FTA00	Tray	254	14 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Get Quote
KIOXIA TC58NVG3S0FBAID SLC NAND Flash Serial 3.3V 8Gbit 1G X 8bit 25ns 63-Pin TFBGA Tray - Trays (Alt: TC58NVG3S0FBAID)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TC58NVG3S0FBAID	Tray		14 Weeks	168	1 - 10 - 100 - 1000 - 10000 -	Get Quote
KIOXIA TC58NVG3S0FTAI0 SLC NAND Flash 3.3V 8Gbit 1G x 8bit 48-Pin TSOP-I - Trays (Alt: TC58NVG3S0FTAI0)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	TC58NVG3S0FTAI0	Tray		14 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Get Quote
KIOXIA TC58NVG3S0FTAI0B4U TMATC58NVG3S0FTAI0B4U 8G SLC (Alt: TC58NVG3S0FTAI0B4U)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Asia	TC58NVG3S0FTAI0B4U			12 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote

TC58NVG3S0F Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TC58NVG3S0FTA00		Toshiba	Memory, Integrated Circuits (ICs), IC FLASH 8GBIT 25NS 48TSOP		Original	PDF

TC58NVG3S0F Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TC58NVG3S0FTA Abstract: No abstract text available Text: TC58NVG3S0FTAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.	Original	TC58NVG3S0FTAI0 TC58NVG3S0F 4096blocks. 4328-byte 2011-07-01C TC58NVG3S0FTA	PDF
Untitled Abstract: No abstract text available Text: TC58NVG3S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0FBAID is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  232) bytes  64 pages  4096blocks.	Original	TC58NVG3S0FBAID TC58NVG3S0FBAID 4096blocks. 4328-byte 2012-01-16C	PDF
TC58NVG3S0FTA00 Abstract: No abstract text available Text: TC58NVG3S0FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG3S0F is a single 3.3V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.	Original	TC58NVG3S0FTA00 TC58NVG3S0F 4096blocks. 4328-byte 2011-07-01C TC58NVG3S0FTA00	PDF
THGBM4G4D1HBAIR Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number	Original	SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0 TC58DYM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5TAI0 TC58DVG02A5BAJ4 THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR	PDF
toshiba TH58NVG*D Abstract: No abstract text available Text: NAND Flash Memory SLC Large Capacity Product list of NAND Flash Memory SLC Large Capacity Block Size: 256K Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number	Original	TC58NVG3S0FBAID 48-P-1220- TC58NVG3S0FTA00 TC58NVG3S0FTAI0 P-TFBGA63-1011- TC58NYG3S0FBAID TH58NVG4S0FTA20 TH58NVG4S0FTAK0 toshiba TH58NVG*D	PDF