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    Abstract: No abstract text available
    Text: Datasheet P-Channel Enhancement Mode MOSFET Features TDM2301S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF TDM2301S -20V/-1 OT23-3L TDM2301Sâ TDM230 23-3L

    marking 6AC sot23

    Abstract: No abstract text available
    Text: Datasheet P-Channel Enhancement Mode MOSFET Features TDM3415S Pin Description -20V/-1.5A , RDS ON =130mΩ(typ.) @ VGS=-4.5V RDS(ON)=170mΩ(typ.) @ VGS=-2.5V Top View of SOT23-3L Super High Dense Cell Design Reliable and Rugged Lead Free Available (RoHS Compliant)


    Original     		PDF TDM3415S -20V/-1 OT23-3L TDM3415Sâ TDM341 TDM2301S 23-3L marking 6AC sot23