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    THMY648091EG Search Results

    THMY648091EG Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    THMY648091EG-10 Toshiba 8,388,608-Word BY 64-BIT SYNCHRONOUS DRAM MODULE Scan PDF
    THMY648091EG-10 Toshiba Scan PDF
    THMY648091EG-80 Toshiba Scan PDF

    THMY648091EG Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TC59SM716FT

    Abstract: No abstract text available
    Text: TO SH IBA THMY648091 EG-80#-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648091EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		THMY648091 EG-80 608-WORD 64-BIT THMY648091EG TC59SM716FT PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THMY648091 EG-80f-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY648091EG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of four TC59SM716FT DRAMs and an unbuffer on a printed circuit board.


    OCR Scan     		THMY648091 EG-80f-10 THMY648091EG 608-word 64-bit TC59SM716FT PDF

    toshiba toggle mode nand

    Abstract: TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP
    Text: DRAM Technology n TOSHIBA DRAM TECHNOLOGY Toshiba DRAM Technology 2 DRAM Technology n DRAM TECHNOLOGY TRENDS Density Design Rule 64M→128M →256M →512M →1G 0.35µm →0.25 µm →0.20 µm →0.175 µm Cost Down, Yield Improvement High Bandwidth Multi - bit


    Original     		64M128M 66MHz 100MHz 200MHz) 500/600MHz 800MHz 400MHz 800MHz) X16/X18X32 PhotoPC550 toshiba toggle mode nand TC518128 TC518129 TC551001 equivalent 551664 TC518512 sgs-thomson power supply Toggle DDR NAND flash jeida 38 norm APPLE A5 CHIP PDF