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    TIED59 Search Results

    TIED59 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TIED59 Texas Instruments 100 mW, avalanche photodiode Scan PDF

    TIED59 Datasheets Context Search

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    tied59

    Abstract: TIED56
    Text: TEXAS O P T O E L E C TR ON IC S INC IDE D 0^3=134 0000125 4 | 17D / T - L/ J - S 3 TIED59 Avalanche Photodiode T e x a s O p t o e l e c t r o n i c s , Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY FEATURES DESCRIPTION • •


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    PDF 00D012S TIED59 TIED59 TIED56

    TIED59

    Abstract: TIED56
    Text: TIED 5 9 A va la n c h e Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the


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    PDF TIED59 TIED59 TIED56

    Untitled

    Abstract: No abstract text available
    Text: •701 TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES Isolated Case fo r Shielding Useful from Audio to Microwave Frequencies Typical Photocurrent Gain > 600 Active Area of 4.5 X 10"3 cm2 Diameter = 30


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    PDF TIED59 0-13W/V TIED59 9J3PL375) IL235)

    Untitled

    Abstract: No abstract text available
    Text: TIED59 Avalanche Photodiode Texas Optoelectronics, Inc. OPTIMIZED FOR HIGH-SPEED DETECTION OF NEAR-INFRARED RADIANT ENERGY DESCRIPTION FEATURES The TIED59 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the


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    PDF TIED59 TIED59 TIED56 000D524

    tied59

    Abstract: TIEF151 TIED56 TIED69
    Text: TEXAS OPTOELECTRONICS INC IDE D | 0 ^ 3 ^ 3 4 0G00127 ô | 170/ T-H1-53 TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. FEATURES DESCRIPTION • • • The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the


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    PDF T-m-53 TIED69 TIED69 TIED56 TIED59 TIEF151

    Untitled

    Abstract: No abstract text available
    Text: ¡M rrn i lllll I • ■ F b TIED 6 9 A v a la n c h e Photodiod e T e x a s O p t o e l e c t r o n ic s , In c . DESCRIPTION FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the


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    PDF TIED69 TIED56 TIED59 60toelectronics, G00D524

    TIED59

    Abstract: TIED69 TIED56 TIEF151
    Text: ML'IIII il III m I h t I TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. DESCRIPTION FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the breakdow n voltage. T h is results in a


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    PDF TIED69 TIED69 TIED56 TIED59 125eC TIEF151

    Untitled

    Abstract: No abstract text available
    Text: TIED69 Avalanche Photodiode Texas Optoelectronics, Inc. D E SC R IP T IO N FEATURES The TIED69 is a high-speed, high-resistivity photodiode. It is designed to operate in the reverse-voltage avalanche region just below the breakdown voltage. T h is results in a


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    PDF TIED69 TIED69 TIED59 3L121-123) 1ZJ83

    TIL702

    Abstract: TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6
    Text: m The Optoelectronics Data Book for Design Engineers T e x a s In s t r u m e n t s IMPORTANT NOTICES Texas Instruments reserves the right to make changes at any time in order to improve design and to supply the best product possible. Tl cannot assume any responsibility for any circuits shown or


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    PDF LCC4230-D EPN4050 TIL702 TIL701 TIL393-9 til78 phototransistor TIL81 til312 7 segment display TIL78 TIL393 TIL313 TIL393-6