Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TJ15S10M3 Search Results

    SF Impression Pixel

    TJ15S10M3 Price and Stock

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics TJ15S10M3,LQ 1,825
    • 1 $0.96
    • 10 $0.783
    • 100 $0.61
    • 1000 $0.44
    • 10000 $0.37
    Buy Now

    Toshiba America Electronic Components TJ15S10M3,LQ(O

    Trans MOSFET P-CH Si 100V 15A 3-Pin(2+Tab) DPAK+ T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical TJ15S10M3,LQ(O 1,498 63
    • 1 -
    • 10 -
    • 100 $0.47
    • 1000 $0.435
    • 10000 $0.435
    Buy Now
    Chip One Stop TJ15S10M3,LQ(O Cut Tape 1,498
    • 1 -
    • 10 $0.422
    • 100 $0.376
    • 1000 $0.348
    • 10000 $0.348
    Buy Now
    EBV Elektronik TJ15S10M3,LQ(O 37 Weeks 2,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Buy Now

    TJ15S10M3 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)


    Original
    TJ15S10M3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)


    Original
    TJ15S10M3 PDF

    Untitled

    Abstract: No abstract text available
    Text: TJ15S10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ15S10M3 1. Applications • Automotive • Switching Voltage Regulators • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)


    Original
    TJ15S10M3 PDF