Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3906LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction
|
Original
|
WBFBP-03D
TK3906LLD03
WBFBP-03D
TK3904LLD03)
-10mA
-50mA
100MHz
-10mA
|
PDF
|
IC MARKING 1005
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3906LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction
|
Original
|
WBFBP-03D
TK3906LLD03
WBFBP-03D
TK3904LLD03)
-10mA
-50mA
100MHz
-10mA
IC MARKING 1005
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3904LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction
|
Original
|
WBFBP-03D
TK3904LLD03
WBFBP-03D
TK3906LLD03)
100mA
100MHz
|
PDF
|
marking 1N
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03D Plastic-Encapsulate Transistors C TK3904LLD03 TRANSISTOR WBFBP-03D 1.0x1.0×0.5 unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction
|
Original
|
WBFBP-03D
TK3904LLD03
WBFBP-03D
TK3906LLD03)
100mA
100MHz
marking 1N
|
PDF
|