Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3904NND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor TOP B FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (TK3906NND03)
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Original
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WBFBP-03B
TK3904NND03
WBFBP-03B
TK3906NND03)
Voltag100mA
100MHz
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PDF
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3906NND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction
|
Original
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WBFBP-03B
TK3906NND03
WBFBP-03B
TK3904NND03)
-50mA
-50mA
-10mA
100MHz
-10mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3906NND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION PNP Epitaxial Silicon Transistor TOP B FEATURES C 1. BASE Epitaxial Planar Die Construction
|
Original
|
WBFBP-03B
TK3906NND03
WBFBP-03B
TK3904NND03)
-50mA
-10mA
100MHz
-10mA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C TK3904NND03 TRANSISTOR WBFBP-03B 1.2x1.2×0.5 unit: mm DESCRIPTION NPN Epitaxial Silicon Transistor TOP B FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (TK3906NND03)
|
Original
|
WBFBP-03B
TK3904NND03
WBFBP-03B
TK3906NND03)
100mA
100MHz
|
PDF
|