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    TK7J90E Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components TK7J90E

    Trans MOSFET N-CH 900V 7A 3-Pin TO-3P(N) - Trays (Alt: TK7J90E,S1E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TK7J90E Tray 16 Weeks 25
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    • 100 $1.2466
    • 1000 $1.20324
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    Toshiba America Electronic Components TK7J90E,S1E

    MOSFETs PLN MOS 900V 2000m (VGS=10V) TO-3PN
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    Mouser Electronics TK7J90E,S1E 143
    • 1 $3.37
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    Toshiba America Electronic Components TK7J90E,S1E(S

    Mosfet, N-Ch, 900V, 7A, To-3P; Channel Type:N Channel; Drain Source Voltage Vds:900V; Continuous Drain Current Id:7A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; No. Of Pins:3Pinsrohs Compliant: Yes |Toshiba TK7J90E, S1E(S
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TK7J90E,S1E(S Bulk 635 1
    • 1 $2.72
    • 10 $2.39
    • 100 $2.02
    • 1000 $1.76
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    EBV Elektronik TK7J90E,S1E(S 19 Weeks 25
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    TK7J90E Datasheets (1)

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    TK7J90E,S1E Toshiba FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V TO-3PN Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7J90E PDF

    Untitled

    Abstract: No abstract text available
    Text: TK7J90E MOSFETs Silicon N-Channel MOS π-MOS TK7J90E 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.6 Ω (typ.) (2) Low leakage current : IDSS = 10 µA (max) (VDS = 720 V) (3) Enhancement mode: Vth = 2.5 to 4.0 V (VDS = 10 V, ID = 0.7 mA)


    Original     		TK7J90E PDF