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    onsemi MTP52N06VLG

    MOSFET PWR N-CH 60V 52A TO-220AB
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    onsemi MTP52N06V

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    Bristol Electronics MTP52N06V 226
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    TP52N06V

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by TP52N06V/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TP52N06V TMOS V™ Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on-resistance area product about o n e -h a lf that of standard MOSFETs. This


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    TP52N06V

    Abstract: 52N06V
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M TP 52N 06V TM O S V P o w er Field E ffe c t Tran sistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TM O S V is a new te ch n o lo g y d e sig n e d to a ch ie ve an o n -re s is ta n ce a rea p ro d u ct a bo u t o n e -h a lf th a t of sta n d a rd M O SFETs. This


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